Sharp LT140SA Datasheet

Hall Device

LT140SA

■ Features

¡

Small temperature coefficient of the Hall voltage

¡

Good linearity of the Hall voltage

¡

Small imbalanced voltage

¡

Directly DC voltage applicable

■ Applications

¡

Brushless motors

VCR, CD, CD-ROM, FDD

¡

Measuring equipment

Gauss meters, magnetic substance detectors

¡

Noncontact sensors

Microswitches, tape-end detection

¡

Other magnetic detection

■ Absolute Maximum Ratings

Parameter

voltage

Control

l current

Contro
Power dissipation
Operating temperature
Storage temperature

Soldering temperature

*1 Soldering time:10 seconds

Symbol

V

P

T

*1

T
T

C

I

C

D

opr

stg
sol

Rating

12
15 mA

150

-20 to +125

-55 to +150
260

LT140SA

Hall Voltage 160mV Thin-Type Package GaAs Hall Device

(Unit : mm)

+0.1

0.14

-0.04

Terminal connection

+

C Input

1 : V

+

H Output

2 : V

-

C Input

3 : V

-

H Output

4 : V

(Ta=25˚C)

Unit

mW

■ Outline Dimensions

0.3 0.3 0.6

14

0.70.7

2.85

1.45

23

0.3 0.3

1.45

1.40

0.6

0.4 0.2

V

˚C

As for dimensions of tape-packaged products, refer to page 44 .

˚C
˚C

Silver Mark

0.9

1.40

■ Electrical Characteristics

Parameter

No-load Hall voltage

Imbalanced ratio

*2

*1

Rank A
Rank

B

Symbol

V

H

VHO/V

V

C

=6V,B=100mT

VC=6V, (B=0)/(B=100mT)

H

Rank C
Input resistance
Output resistance

Drift of imbalanced voltage vs. temperature
Temperature coefficient of Hall voltage

Temperature coefficient of input resistance
Linearity of Hall voltage

*1 No-load Hall voltage is nearly proportional to Vc (within the range of 1 to 6V) at temperatures of -20˚C to + 125˚C.
Keep the voltage within the allowable power dissipation range.
*2 Imbalanced ratio is in +/-12% within the range of Vc=1 to 6V.

R

IN

R

OUT

|∆VHO|

β
α
γ

IM=1mA, B=0mT
I

M

=1mA, B=0mT

V

C

=6V, B=0mT, Ta=-20˚C to 25˚C

VC=6V, B=0mT, Ta=25˚C to 125˚C
IC=6mA, B=100mT, T1=-20˚C, T2=125˚C
IM=1mA, B=0mT, T1=-20˚C, T2=125˚C
IC=6mA, B1=50mT, B2=100mT

VH=VM-VHO

1

β=

V

H(T1

)

α=

1

IN(T1

)

R

{K

H(B2

γ=

)-KH(B1)}

{KH(B1)+KH(B2)}

In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices
shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device spcification sheets before using any SHARP device.

H(T2

)-VH(T1)}

{V

X

(T2-T1)

{RIN(T2)-RIN(T1)}

XX100

(T2-T1)

X2X100,

X100

H

=

K

V

H

(ICXB)

Conditions

V

M

:Observed Hall voltage

VHO:Imbalanced voltage

KH:Sensitivity

MIN.

145

2

-5

-2

650

1 300

-

-

-

-

TYP.

160

-

-

-

800

1 600

5

-0.04

0.2

0.3

MAX.

175

12

5

-12
950

1 900

-

-

-

-

(Ta=25˚C)

Unit

mV

%

Ω
Ω

mV

%/˚C
%/˚C

%

Hall Device

LT140SA

Fig. 1 Hall Voltage vs. Ambient

Temperature

200

160

(mV)

H

120

IC=6mA

80

Hall voltage V

40

0

-20 0 8040 120
Ambient temperature Ta (˚C)

B=100mT

VC=6V

Fig. 3 Hall Voltage vs. Magnetic Flux

Density

2 000

1 600

1 200

800

VC=6V

a=25˚C

T

Fig. 2 Input Resistance vs. Ambient

Temperature

2 000

1 600

1 200

Input resistance RIN (Ω)

B=0mT

M=1mA

I

800

400

0

-20 0 8040 120
Ambient temperature Ta (˚C)

Fig. 4 Hall Voltage vs. Control Current

400

B=100mT

T

a

=25˚C

(mV)

H

320

240

160

Hall voltage VH (mV)

400

0

0 800400200 600 1 000

Magnetic flux density B (mT)

Fig. 5 Hall Voltage vs. Control Voltage

400

B=100mT

a=25˚C

T

320

240

160

Hall voltage VH (mV)

80

0

08412

Control voltage VC (V)

Hall voltage V

80

0

08412

Control current IC (mA)

Fig. 6 Power Dissipation vs. Ambient

Temperature

200

160

(mW)

D

120

80

40

Power dissipation P

0

08040 120 160 200

Ambient temperature T

a

(˚C)