Sharp LT135A Datasheet

Hall Device

LT135A

■ Features

¡

Small temperature coefficient of the Hall voltage

¡

Good linearity of the Hall voltage

¡

Small imbalanced voltage

¡

Directly DC voltage applicable

LT135A

Hall Voltage 240mV GaAs Hall Device

■ Outline Dimensions

2.7±0.3

0.40.4

1

4

0.6

(Unit : mm)

■ Applications

¡

Brushless motors

VCR, CD, CD-ROM, FDD

¡

Measuring equipment

Gauss meters, magnetic substance detectors

¡

Noncontact sensors

1.9

2.9±0.2

2

(0.85)(0.95)

N

3

0.4

4-R0.2

Microswitches, tape-end detection

¡

Other magnetic detection

■ Absolute Maximum Ratings

Control voltage

Parameter

Control current
Power dissipation
Operating temperature
Storage temperature
Soldering temperature

*1

Soldering time : 10 seconds

*1

Symbol

V

P

T

T
T

C

I

C

D

opr

stg
sol

(Ta=25˚C)

Rating

12
15 mA

150

-20 to +125

-55 to +150
260

+0.10

-0.06

Unit

0.16

V

mW

˚C

As for dimensions of tape-packaged products, refer to page 44 .

˚C
˚C

1.5±0.2

0.6 0.6

0.30.8

(0to0.15)

Terminal connection
1:V
2:V

+0.2

-0.1

3:V

1.1

4:V

C

Input

H

Output

C

Input

H

Output

■ Electrical Characteristics (T

Parameter

*1

No-load Hall voltage
Imbalanced voltage

*2

Input resistance
Output resistance

Drift of imbalanced voltage vs. temperature
Temperature coefficient of Hall voltage

Temperature coefficient of input resistance
Linearity of Hall voltage

*1 No-load Hall voltage is nearly proportional to Vc (within the range of 1 to 6V) at temperatures of -20˚C to + 125˚C.
Keep the voltage within the allowable power dissipation range.
*2 Imbalanced ratio is in +/-12% within the range of Vc=1 to 6V.

Symbol

H

V

V

HO

R

IN

R

OUT

|∆VHO|

β
α

γ

C

=6V, B=100mT

V
V

C

=6V, B=0mT

M

=1mA, B=0mT

I
I

M

=1mA, B=0mT

C

=6V, B=0mT, Ta=-20˚C to 25˚C

V

C

=6V, B=0mT, Ta=25˚C to 125˚C

V
IC=6mA, B=100mT, T1=-20˚C, T2=125˚C
IM=1mA, B=0mT, T1=-20˚C, T2=125˚C
IC=6mA, B1=50mT, B2=100mT

Conditions

VH=VM-VHO

β=
α=

1
V

H(T1

)

1

IN(T1

)

R

{K

H(B2

{K

H(B1

)-KH(B1)}
)+KH(B2)}

γ=

H(T2

)-VH(T1)}

{V

X

XX100

{R

(T

IN(T2

(T

2-T1

)-RIN(T1)}

2-T1

X2X100,

X100

)

)

H

=

K

V

H

(ICXB)

V

M

:Observed Hall voltage

V

HO

:Imbalanced voltage

H

:Sensitivity

K

MIN

200

-15
650

1 300

-

-

-

-

TYP.

240

-

800

1 600

5

-0.03

0.2
2

MAX.

280

15

950

1 900

-

-

-

-

2.9±0.2

a

=25˚C)

Unit

mV
mV

Ω
Ω

mV

%/˚C
%/˚C

%

In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices
shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device spcification sheets before using any SHARP device.

LT135AHall Device

Fig. 1 Hall Voltage vs. Ambient

Temperature

B=100mT

300
250

(mV)

H

200

150

100

Hall voltage V

VC=6V

IC=6mA

50

0

-20 0 8040 120
Ambient temperature Ta (˚C)

Fig. 3 Hall Voltage vs. Magnetic Flux

Density

1 600
1 400

1 200

(mV)

H

1 000

Hall voltage V

VC=6V

a

=25˚C

T

800
600
400
200

0

0 500400100 200 300 600

Magnetic flux density B (mT)

Fig. 5 Hall Voltage vs. Control Voltage

B=100mT

T

a

=25˚C

(mV)

H

600

500
400

Fig. 2 Input Resistance vs. Ambient

Temperature

2 000

1 600

1 200

Input resistance RIN (Ω)

B=0mT

M=1mA

I

800

400

0

-20 0 8040 120
Ambient temperature Ta (˚C)

Fig. 4 Hall Voltage vs. Control Current

600

B=100mT

a=25˚C

T

400

300

200

Hall voltage VH (mV)

100

0

08412

Control current IC (mA)

Fig. 6 Power Dissipation vs. Ambient

Temperature

200

160

120

300

200

Hall voltage V

100

0

0810246 12

Control voltage VC (V)

80

40

Power dissipation PD (mW)

0

08040 120 160 200

Ambient temperature Ta (˚C)