Sharp LT0H34P Datasheet
TEC940525
HOLOGRAM LASER
Hologram Laser(3 beam) for MD players/recorders
■ Features
(1) Compact package with high power output
(MAX. 35mW)
(2) Enables to design compact pick-up thanks to
compact package. (Thickness; 4.8mm)
(3) Since its semiconductor laser, signal detection
photocell, and circuit array are assembled in a
package, the optical pick is simple in assembling
and adjustment
(4) The adjustment during pickup assembly is eased
and can easily be automated.
■ Applications
(1) MD players/recorders
LT0H34P
■ Outline Dimensions
φ
8.2
MIN.
0.25
φ
Hologram grass
Cap glass
0.25
LD chip
Reference surface
6.63
3.2
φ
P1.4 0.2 X 3=4.2±±0.2
1
10
9
4.9
(Unit: mm)
MIN.
0.25
2.0
4.77
1.27
φ
0.4
10 -
8.2
2
4
3
5
2.8
7 6
8
MAX.
0.3
1.2
4.6
4.8
4.8
3.97
[Terminal connection]
LT0H34P
110
Monitor PD
Laser diode
5
2
GD1D2D3D4D5
9: NC
34687
■ Absolute Maximum Ratings
Parameter Symbol Ratings Units
Optical power output *1
Reverse
voltage
Monitor photodiode
Photodiode for signal detection
PH
Laser 2
VR 30 V
32 mW
15
*1 Output power from hologram laser
*2 Case temperature
*3 At the position of 1.6mm from the
bottom face of resin package.
Operating temperature *2 Topr -10 to +60 ˚C
Storage temperature *2 Tstg -40 to +85 ˚C
Soldering temperature *3
(Notice)
Tsol ˚C
• In the absence of device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices
shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
• Specifications are subject to change without notice for improvement.
(Internet)
• Data for Sharp's optoelectronic/power devices is provided for internet. ( Address http://www.sharp.co.jp/ecg/)
260(5s or less)
LT0H34P
TEC940525
■ Electro-optical Characteristics
Parameter
Threshold current Ith - - 60 80 mA
Operating current
Operating voltage
Wavelength *2 λp 770 785 800 nm
Monitor current
Laser
Radiation
Characteristics
Emission
Angle
Angle
Point
accuracy
Positon
Differentioal efficiency
Monitor
Photodiode
Dark current
Terminal capacitance
Reverse voltage
Dark current Id - - 10 nA
Photodiode
for signal
Terminal capacitance Ct
detection
Short circuit current
Response time *5
Parallel
Perpendicular
*3 *4
(Tc=25˚C)
Symbol
Condition Units
MIN TYP MAX
Iop - 125 150 mA
Vop PH=27.4mW *1 - 1.8
PH=27.4mW *1,VR=5V
Im
θ//
θ⊥
PH=27.4mW *1
∆φ //
∆φ ⊥
∆x
∆y
- - - ±30 µm
∆z
η 0.25 0.5 0.85 mW/mA
Iop(27.4mW) - Iop(9.1mW)
18.3mW
Id
V
Ct - 20 - pF
R=5V
- 0.14 - mA
-11-
-26-
- -±1
- -±3
- - ±30 µm
- - ±80 µm
- - 150 nA
2.2
A
VR
IR=10µA
15 - - V
B
C
A
VR=1.5V
B
C
1.0 - 8
A
VR=1.5V,f=1MHz
Isc Ev=1000Lx 40 80 - nA
VR=1.5V, RL=180Ω
tr,tf
B
0.6 - 6
C
120 210 -
A
B
60 115 -
C
A
B
C
- - 660
- - 660
V
˚
˚
˚
˚
pF
ns
*1 Output power form LD chip
*2 Oscillation mode: TEM00
*3 Values in each element. Elements other than subject elemens shall be
measured while the anode and the cathode are short-sircuited to each other
*4 Short-circuit currents between segments D1 and D5 or D3 and D4 shall be
within ±10% of the average
*5 Ev:Illuminance by CIE standard light source A(tungsten lamp)
*6 Measuring method is shown below.
Laser diode
λ=780nm
Input
Output
L =180Ω
R
VR=1.5V
Input
Output
tr tf
*7 Applicabledivisions
correspond to pattern segment No.
D1
50%
95%
5%
D2
D3
D5
Segment No.
D1,D5 ••••••• A
D2,D3 ••••••• B
D4 ••••••••••• C
Fig.1
D4
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