Sharp LT0H33P Datasheet
HOLOGRAM LASER
Hologram Laser(3 beam) for MD players
■ Features
(1) Enables to design compact pick-up thanks to
compact package. (Thickness; 4.8mm)
(2) Since its semiconductor laser, signal detection
photocell, and circuit array are assembled in a
package, the optical pick is simple in assembling
and adjustment
(3) The adjustment during pickup assembly is eased
and can easily be automated.
■ Applications
(1) MD players
LT0H33P
■ Outline Dimensions
φ
8.2
MIN.
0.25
φ
Hologram glass
Cap glass
0.25
LD chip
Reference surface
6.63
3.2
±
P1.4 0.2X 3=4.2±0.2
1
2
2
10
9
8
4.9
4.9
8.2
0.25
-
φ
10 0.4
3
7 6
MIN.
4
(Unit: mm)
4.8
4.8
3.97
3.97
2.0
4.77
4.77
MAX.
1.27
5
2.8
MAX.
0.3
0.3
1.2
1.2
4.6
4.6
4.8
[Terminal connection]
LT0H33P
110
Laser diode
5
2
GD1D2D3D4D5
9: NC
34687
■ Absolute Maximum Ratings
Parameter Symbol Ratings Units
Optical power output *1 PO 7.0 mW
Laser 2
Reverse
voltage
Monitor photodiode V
Photodiode for signal detection
R
30 V
15
*1 Output power from hologram laser
*2 Case temperature
*3 At the position of 1.6mm from the
bottom face of resin package.
Operating temperature*2 Topr -25 to +70 ˚C
Storage temperature *2 Tstg -40 to +85 ˚C
Soldering temperature *3 Tsol 260(5s or less) ˚C
(Notice)
• In the absence of device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices
shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
• Specifications are subject to change without notice for improvement.
(Internet)
• Data for Sharp's optoelectronic/power devices is provided for internet. ( Address http://www.sharp.co.jp/ecg/)
LT0H33P
TEC940525
■ Electro-optical Characteristics
Parameter Symbol
Condition
MIN TYP MAX
(Tc=25˚C)
Threshold current Ith - - 45 60 mA
Operating current Iop - 63 85 mA
Operating voltage Vop - - 2.0 V
Po = 6mW *1
Wavelength *2 λp 770 780 800 nm
Po =6mW *1,VR=15V
o = 6mW *1
P
Laser
(without
hologram
glass)
Monitor current Im 0.15 0.5 1 mA
Radiation
Characteristics
Angle
Parallel θ// 8.5 11 13 ˚
Perpendicular
θ⊥ 29 38 43 ˚
∆φ // - -±1˚
Emission
Point
accuracy
Angle ∆φ ⊥ - -±3˚
∆x - - ±20 µm
Positon ∆y - - - ±20 µm
∆z - - ±80 µm
Differentioal efficiency
η
18.3mW
Iop(6mW)-Iop(6mW)
0.15 0.3 0.6 mW/mA
Sensitivity S - 0.08 - mA/mW
Monitor Dark current - - 150 nA
Photodiode
Terminal capacitance Ct - 20 - pF
Id
R=1.5V
V
A
Reverse voltage
VR
I
R=10µA
B
15 - - V
C
A
Dark current - - 10 nA
Id
R=1.5V
V
B
C
Photodiode
for signal
detection
Terminal capacitance
Short circuit current*3 *4
Response time *5
A
Ct
V
R=1.5V,f=1MHz
B
C
A
Isc Ev=1000Lx 40 80 - nA
B
C
A
tr,tf
R=1.5V, RL=180Ω
V
B
C
1-8
0.6 - 6
120 210 -
60 115 -
- - 660
- - 660
Units
pF
ns
*1 Output power form LD chip
*2 Oscillation mode, transverse single mode
*3 Values in each element. Elements other than subject elemens shall be
measured while the anode and the cathode are short-sircuited to each other
*4 Short-circuit currents between segments D1 and D5 or D3 and D4 shall be
within ±10% of the average
*5 Measuring method is shown below.
Laser diode
λ=780nm
Input
Output
R
L =180Ω
R=15V
V
Input
Output
tr tf
*6 Applicabledivisions
correspond to pattern segment No.
D1
50%
90%
10%
D2
D3
D5
Segment No.
D1,D5 ••••••• A
D2,D3 ••••••• B
D4 ••••••••••• C
Fig.1
D4
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