Sharp LT0H12M Datasheet

TEC N 940525

Hologram Laser

Hologram Laser(1 beam) for Magneto-Optical disk

■ Features

(1) Maximum optical output: 35mW
(2) Pickups reduced in size and weight on request
(3) The housing of pickups shifted from aluminum

die-cast to formed resin on request (reducing the
weight to 1/3)

(4) Since its semiconductor laser, signal detection
photocell, and circuit array are assembled in a
package, the optical pickup is simple in
assembling and adjustment

■ Applications

(1) Magneto-optical disk drives
(2) CD-Rs

LT0H12M

■ Outline Dimensions

Hologram glass

Cap glass

LD chip

Reference surface

0.4

45˚

3

45˚

φ

9.0

φ

7.6

φ

6.6

3.6

Z

φ

4.9

5

4

2 9

1

10 - φ 0.45

6

10

(Unit: mm)

7

8

X

■ Absolute Maximum Ratings

Parameter Ratings Units

Optical power output*1 P

Reverse
voltage

Laser 2

Monitor photodiode VR 30 V

Photodiode for signal detection
Operating temperature*2 Topr -10 to +50
Storage temperature *2

Soldering temperature *3 Tsol 260(5s or less)

[Terminal connection]

Symbol

O

35 mW

15

Tstg -40 to +85 ˚C

Y

1.0
allowance = ±0.2mm

34

Laser diode

8

10

GD1D2D3D4

Monitor photodiode

7912

*1 Output power from LD chip
*2 Case temperature

*3 At the position of 1.6mm from the
bottom face of resin package.

(Notice)

• In the absence of device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices
shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.

• Specifications are subject to change without notice for improvement.

LT0H12M

TEC N 940525

■ Electro-optical Characteristics

Parameter

Threshold current Ith - - 60 80 mA

Operating current
Operating voltage
Wavelength *2 λp 770 780 795 nm

Monitor current

Parallel 8 9.5 13

Angle

Perpen-

*3

dicular

Ripple PO =30mW *1 -20 - 20 %

Angle

Positon

Laser

(without
hologram
glass)

Radiation
Characteristics

Emission
Point
accuracy

Differentioal efficiency

Monitor

Photodiode

Sensitivity

Dark current ID VR=15V - - 150 nA

Terminal capacitance Ct - 8 - pF

Reverse voltage VR IR=10µA15--V

Dark current Id VR=15V - - 20 nA

Photodiode

Terminal capacitance

for signal
detection

Short circuit current *4

Response time *6

(Tc=25˚C)

Symbol

Condition

MIN

TYP MAX Units

Iop - 115 150 mA

Vop Po =30mW *1 - 1.85 2.2 V

Im Po =30mW *1 ,VR=15V 0.1 0.3 2 mA

θ//
θ⊥

∆φ //
∆φ ⊥

∆X,Y,Z

η

- -80 - 80 µm

20mW

Iop(30mW) - Iop(10mW)

20. 26 32 ˚

-2 - 2 ˚

-3 - 3 ˚

0.3 0.55 0.8 mW/mA

S - 10 -

A,B
A,B

0.6 2.8 5

Ct VR=15V,f=1MHZ

Isc Ev=1000Lx *5

VR=15V,RL=180Ω - 10 140 ns

tr,tf

A
B

A
B

A,B

0.8 3 5.4
85 170 270

260 460 670

˚

µ

A/mW

pF

nA

*1 Output power form LD chip
*2 Oscillation mode, transverse single mode
*3 An angle for 50% of the peak intensity (full angle at half maximum).
*4 Values in each element. Elements other than subject elements shall be measured

while the anode and the cathode are short-circuited to each other
*5 Illumination intensity by CIE standard light (Tungsten lamp)

*6 Measuring method is shown below

Laser diode
λ=780nm

Input

L

R

Output

=180Ω

V

R

=15V

Input

Output

t

r

*7 Applicabledivisions correspond to pattern segment No.

Segment No.
D2,D3 ••••••• A

D2 D3 D4D1

D1,D4 ••••••• B

50%

90%

10%

t

f