GP1S24
GP1S24
Subminiature Photointerrupter
■ Features
1. Compact package
2. PWB mounting type
3. High sensing accuracy (Silt width : 0.3mm
4. Gap between light emitter and detector(3mm
5. With a positioning boss
■ Applications
1. Floppy disk drives
2. Laser disc players
■ Outline Dimensions
(
Unit : mm
Internal connection diagram
4
3
)
)
)
6.0
)
1.0
(
+ 0.2
- 0.1
3.01.5
❈5.0
2.5
φ 1.4
(
C0.3
C0.2
+ 0
- 0.1
Center of
light path
3.5
4- 0.15
1
4
1
1 Anode
2 Collector
4.2
)
0.3
Slit width
)
0.8
4- 0.5
❈2.5
* Unspecified tolerance:± 0.2
* The dimensions indicated
2
by ❈ refer to those
measured from the lead base.
* Burr's dimensions: 0.15 MAX.
* ( ): Reference dimensions
3
+ 0
φ 1.0
- 0.1
2
3 Emitter
4 Cathode
(
C0.8
5.2
MIN.
4.0
)(
■ Absolute Maximum Ratings
(
Ta= 25˚C
)
Parameter Symbol Rating Unit
Input
Forward current I
Reverse voltage
F
V
R
50 mA
6V
Power dissipation P 75 mW
Collector-emitter voltage V
Output
Emitter-collector voltage V
Collector current I
Collector power dissipation P
Total power dissipation
Operating temperature
Storage temperature T
*1
Soldering temperature
*1 For 5 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
CEO
ECO
C
C
P
tot
T
opr
stg
T
sol
35 V
6V
20 mA
75 mW
100
- 25 to + 85
mW
˚C
- 40 to + 100 ˚C
260 ˚C
1mm or more
Soldering area
GP1S24
■ Electro-optical Characteristics
Parameter Symbol MIN. TYP. MAX. Unit.
Input
Output Collector dark current
Transfer
characteristics
Fig. 1 Forward Current vs. Ambient
Temperature
)
mA
(
F
Forward current I
Forward voltage V
Reverse current I
Collector current I
Collector-emitter saturation voltage
Response time
60
50
40
30
20
10
Rise time
Fall time
(
Ta = 25˚C
)
Conditions
IF= 20mA - 1.2 1.4 V
F
R
I
CEO
C
V
CE(sat
t
t
VR=3V - - 10 µA
VCE= 20V - - 100 nA
VCE= 5V, IF= 5mA 40 - 400 µ A
)
IF= 10mA, IC= 40m A - - 0.4 V
VCE= 5V, IC= 100m A
r
R
f
L
= 1 000 Ω
- 50 150 µ s
- 50 150 µ s
Fig. 2 Power Dissipation vs.
Ambient Temperature
120
P
P, P
tot
c
100
)
mW
80
(
60
40
Power dissipation P
20
0
- 25 0 25 50 75 100
Ambient temperature Ta (˚C
85
)
Fig. 3 Forward Current vs. Forward Voltage
500
T
= 75˚C
200
)
100
mA
(
F
Forward current I
a
50˚C
50
20
10
5
2
1
0 0.5 1 1.5 2
Forward voltage VF (V
25˚C
- 25˚C
2.5 3
)
0˚C
0
- 25 0 25 50 75 100
Ambient temperature T
a
(˚C
85
)
Fig. 4 Collector Current vs. Forward Current
VCE=5V
1.0
T
= 25˚C
a
0.8
)
mA
(
C
0.6
0.4
Collector current I
0.2
0
01020
Forward current IF (mA
)