GP1S06
GP1S06
High Sensing Accuracy Type
Photointerrupter
■ Features
1. High sensing accuracy
(Slit width : 0.25mm
)
2. PWB direct mounting type package
■ Applications
1. Floppy disk drives
2. Copiers, printers, facsimiles
3. Optoelectronic switches, optoelectronic
counters
■ Outline Dimensions
0.25
12.0
+
0.2
3.0
-
0.1
)
0.1
1S06
3
2- φ 0.7
±
0.1
3.5
C0.5
4
0.15
+0-
2.0
±
0.1-0
+
2.5
2 - 0.7
4 - 0.45
0.2
±
3.7
5.26
+ 0.3
- 0.1
2.3
(
8.8
±
5.5
12
(
Unit : mm
Internal connection diagram
1
2
1 Anode
2 Cathode
8.0
MIN.
MIN.
2 - 12.0
2 - 11.0
* Unspecified tolerances shall be as follows ;
0.1
Dimensions(d
6.0< d<=12.0
* ( ): Reference dimensions
3 Collector
4 Emitter
6.0
0.25
Slit width
(
Both sides of detector
and emitter
2 -(2.54
)
Tolerance
d<=6.0
4
3
±
0.05
)
± 0.15
± 0.25
)
)
■ Absolute Maximum Ratings
Parameter Symbol Rating Unit
Forward current I
*1
Input
Peak forward current I
Reverse voltage V
Power dissipation P 75 mW
Collector-emitter voltage V
Output
Emitter-collector voltage V
Collector current I
Collector power dissipation P
Operating temperature T
Storage temperature T
*2
Soldering temperature T
*1 Pulse width<=100µ s, Duty ratio= 0.01
*2 For 5 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
F
FM
R
CEO
ECO
C
C
opr
stg
sol
(
Ta =25˚C
50 mA
1A
6V
35 V
6V
20 mA
75 mW
- 25 to + 85 ˚C
- 40 to + 100 ˚C
260 ˚C
)
GP1S06
■ Electro-optical Characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Forward voltage V
Input
Output Collector dark current I
Transfer
characteristics
Fig. 1 Forward Current vs. Ambient
Temperature
)
mA
(
F
Forward current I
Peak forward voltage V
Reverse current I
Collector Current Ic V
Collector-emitter saturation voltage
Response time
60
50
40
30
20
10
0
- 25 0 25 50 75 100
Ambient temperature Ta (˚C
Rise time t
Fall time t
85 - 25 0 25 50 75 100
)
V
IF= 20mA - 1.2 1.4 V
F
IFM= 0.5A - 3 4 V
FM
VR=3V - - 10 µA
R
VCE= 20V -
CEO
= 5V, IF= 20mA 0.1 - 2.5 mA
CE
)
IF= 40mA, IC=50µA - - 0.4 V
CE(sat
r
VCE= 2V, IC= 0.5mA, RL=1kΩ
f
-3890µs
- 48 110 µ s
1nA
Fig. 2 Collector Power Dissipation vs.
Ambient Temperature
120
)
100
mW
(
c
80
75
60
40
20
Collector power dissipation P
0
Ambient temperature Ta (˚C
)
(
Ta =25˚C
100
85
)
Fig. 3 Peak Forward Current vs. Duty Ratio Fig. 4 Forward Current vs. Forward Voltage
1 0000
)
mA
(
2 000
FM
1 000
500
200
100
Peak forward current I
50
20
-3
25 5252
10
Pulse width<=100µ s
Ta= 25˚C
-2
10
Duty ratio
-1
10
0
10
500
T
= 75˚C
200
)
100
mA
(
50
F
20
10
Forward current I
5
2
1
a
50˚C
0 0.5 1.0 1.5 2.0
Forward voltage VF (V
25˚C
0˚C
- 25˚C
2.5 3.0
)
GP1S06
Fig. 5 Collector Current vs. Forward Current
1.6
VCE=5V
= 25˚C
T
a
1.4
)
1.2
mA
(
c
1.0
0.8
0.6
0.4
Collector current I
0.2
0
02010 30 40 0 2
Forward current IF (mA
)
50
Fig. 7 Collector Current vs.
Ambient Temperature
)
(
mA
C
0.8
0.7
0.6
0.5
= 20mA
I
F
V
CE
=5V
0.4
0.3
Collector current I
0.2
0.1
0
- 25 0 25 50 75 100
Ambient temperature Ta (˚C
)
Fig. 9 Response Time vs. Load Resistance
500
VCE=2V
I
= 0.5mA
C
200
T
= 25˚C
a
100
)
50
µ s
(
20
t
f
t
r
t
d
10
Response time
5
t
s
2
1
0.2 0.5 1 5 10
Load resistance R
2
L
(kΩ
20 50
)
Input
Fig. 6 Collector Current vs.
Collector-emitter Voltage
Ta= 25˚C
2.4
2.2
2.0
)
1.8
mA
(
1.6
c
1.4
1.2
1.0
0.8
Collector current I
0.6
0.4
0.2
0
1345678910
I
= 50mA
F
40mA
30mA
20mA
10mA
Collector-emitter voltage VCE (V
Fig. 8 Collector-emitter Saturation
Voltage vs.
0.08
)
V
(
0.06
)
sat
(
0.04
CE
V
Collector-emitter saturation voltage
0.02
Ambient Temperature
0.16
0.14
IF= 40mA
I
=50µA
C
0.12
0.10
0
- 25 0 25 50 75 100
Ambient temperature T
(˚C
a
Test Circuit for Response Time
V
R
D
CC
R
L
Output
Input
Output
t
d
t
r
)
)
10%
90%
t
s
t
f
GP1S06
Fig.10 Frequency Response Fig.11 Collector Dark Current vs.
Ambient Temperature
-6
10
VCE= 20V
)
0
dB
(
V
-5
-10
-15
Voltage gain A
-20
RL= 10kΩ
3
5
25 25 2
10
Frequency f (Hz
VCE=2V
I
= 0.5mA
C
= 25˚C
T
a
1kΩ
4
10
)
Fig.12 Relative Collector Current vs.
Shield Distance (1
100
)
%
(
50
Relative collector current
0
- 0.4 0 0.1 0.2
- 0.2 - 0.1
- 0.3 0.3 0.4
Shield distance L (mm
)
IF= 20mA
V
CE
T
= 25˚C
a
Shield
(
Detector center
)
10
=5V
L
0
5
Detector
+-
)
5
)
2
A
(
-7
10
CEO
5
2
-8
10
5
2
-9
10
Collector dark current I
5
2
-10
10
0 25 50 75 100
Ambient temperature Ta (˚C
Fig.13 Relative Collector Current vs.
Shield Distance (2
100
)
%
(
50
Relative collector current
0
Shield distance L (mm
)
I
F
V
T
L
Detector
210
)
= 20mA
=5V
CE
= 25˚C
a
Shield
)
Detector
0
+
43-1-2
(
center
)
● Please refer to the chapter “Precautions for Use”
(
Page 78 to 93).
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