Sharp GL382 Datasheet
GL382
GL382
IrDA-Based SIR System-Conforming
Infrared Emitting Diode
Features
■
1. Compact 3 φ resin mold package
2.
Peak emitting wavelength conforming to SIR system based on IrDA
( λ p=880 nm [IF=50mA]
)
3. Narrow beam angle
(Half intensity angle : TYP. ± 17˚ )
4. High speed response
(Cut-off frequency fc : TYP.12MHz)
Applications
■
1. Portable information terminal equipment
2. Personal computers
3. Printers
Absolute Maximum Ratings
■
Parameter Symbol Rating Unit
Forward current
*1
Peak forward current
Reverse voltage
Operating temperature
Storage temperature
*2
Soldering temperature
I
F
I
FM
V
R
T
opr
T
stg
T
sol
-25to+85
- 40 to + 85
(Ta=25˚C)
60 mA
0.5
4
260 ˚C
A
V
˚C
˚C
■
Outline Dimensions
φ 3.8
± 0.15
φ 3.0
0.6
MAX.
0.8
+ 0.15
2 - 0.5
- 0.1
(
)
2.54
3.6
1
*1 Pulse width <= 100µs, Duty ratio=0.01
*2 For 3 seconds at the position of 2.6 mm from the resin edge
± 0.2
5.3
± 1.0
14.2
MIN.
0.5
- 0.1
+ 0.15
2
* Tolerance: ±0.2mm
2 - 0.5
(Unit : mm)
1
2
1 Anode
2 Cathode
Electro-optical Characteristics
■
Parameter
Forward voltage
Peak forward voltage
Reverse voltage
*3
Radiant intensity
Peak emission wavelength
Half intensity wavelength
Response frequency
Half intensity angle
*3 IE: Value obtained by converting the value in power of radiant fluxes emitted at the solid angle of 0.01 sr (steradian) in the direction of mechanical axis of
the lens portion into 1 sr or all those emitted from the light emitting diode.
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
Symbol Conditions MIN. TYP. MAX. Unit
V
V
FM
I
R
I
E
λ
P
∆λ I
f
C
∆θ
IF= 50mA - V
F
1.5
IFM= 0.5A - 2.2 V
VR=3V - - 10 µA
IF= 50mA -
= 50mA
I
F
= 50mA
F
I
=50mA+10mA
F
I
= 20mA - - ˚
F
p-p
6
--nm
--nm
--
18
880
40
12
±17
(Ta=25 ˚C)
1.7
3.8
mW/sr
MHz
GL382
Fig. 1 Forward Current vs. Ambient
Temperature
120
100
)
80
mA
(
F
60
40
Forward current I
20
0
-25
0 25 12550 75 85 100
Ambient temperature Ta (˚C
Fig. 3 Spectral Distribution
100
50
Fig. 2 Peak Forward Current vs. Duty Ratio
5 000
)
mA
(
1 000
FM
500
100
50
Peak forward current I
10
-4
10
)
-3
10
10
Duty ratio
-2
Pulse width
<=100µs
T
= 25˚C
a
-1
10
1
Fig. 4 Peak Emission Wavelength vs.
Ambient Temperature
)
(
nm
p
910
900
890
880
IF=const
Relative radiant intensity (%)
0
750
800
850 900
950
Wavelength λ (nm)
Fig. 5 Forward Current vs. Forward Voltage
1 000
)
mA
100
(
F
Ta= 75˚C
10
50˚C
Forward current I
1
0 0.5 1 2 31.5 2.5 3.5
Forward voltage V
25˚C
0˚C
- 25˚C
)
(V
F
870
Peak emission wavelength λ
860
-25
Ambient temperature Ta (˚C
25 50 75 85
0
)
Fig. 6 Relative Radiant Flux vs. Ambient
Temperature
10
5
2
1
0.5
Relative radiant flux
0.2
0.1
-25
0
Ambient temperature T
25 50
(˚C
a
IF = const
75
)
85
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