SHANGHAI SUNRISE ELECTRONICS CO., LTD.
SB85
SILICON SCHOTTKY
DETECTING DIODE
REVERSE VOLTAGE: 50V
FORWARD CURRENT: 150mA
FEATURES
• Small glass structure ensures high reliability
• Fast switching
• Low leakage
• High temperature soldering guaranteed:
o
250
C/10S/9.5mm lead length
at 5 lbs tension
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Glass,hermetically sealed
• Polarity: Color band denotes cathode
• Mounting position: Any
1.0 (25.4)
.085 (2.2)
.120 (3.0)
1.0 (25.4)
TECHNICAL
SPECIFICATION
DO - 34 DO - 35
1.0 (25.4)
MIN.
MIN.
.050 (1.27)
.075 (1.91)
.018 (0.46)
.022 (0.56)
DIA
.120 (3.0)
.200 (5.1)
DIA.
Dimensions in inches and (millimeters
MIN.
1.0 (25.4)
MIN.
.060 (1.5)
.090 (2.3)
.018 (0.46)
.022 (0.56)
DIA.
DIA.
MAXIMUM RATINGS AND CHARACTERISTICS
(Ratings at 25oC ambient temperature unless otherwise specified)
6
VALUE
-55 +125
50
150
30
0.4
0.8
3
UNITS
V
mA
mA
V
V
µA
o
C
RATINGS
Reverse Voltage
Forward Current (peak)
Forward Current (D.C.)
Forward Voltage (D.C.)
Reverse Current (V
=30V) I
R
=10mA V
I
F
=100mA V
I
F
SYMBOL
V
R
I
FM
I
F
F1
F2
R
Typ. Max.
Capacitance (Note 1) Ct pF
Detection Effectiveness (Note 2)
Operating Junction and Storage
Temperature Range
T
J,TSTG
60%
Notes:
1. VR=10V, f=1MHz
2. Vm=3V(peak), f=30MHz, RL=3.9KΩ, Ct=10pF.
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