SHANGHAI SUNRISE ELECTRONICS CO SB840, SB850, SB830, SB820, SB860 Datasheet
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
y
)
SB820 THRU SB860
SCHOTTKY BARRIER
RECTIFIER
VOLTAGE: 20 TO 60V CURRENT: 8.0A
TECHNICAL
SPECIFICATION
FEATURES
TO-220A
• Epitaxial construction for chip
• High current capability
• Low forward voltage drop
• Low power loss, high efficiency
• High surge capability
• High temperature soldering guaranteed:
o
250
C/10sec/0.375"(9.5mm) lead length
at 5 lbs tension
MECHANICAL DATA
• Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: As marked
• Mounting position: Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive
load, derate current b
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(T
=95oC)
C
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Forward Voltage (at 8.0A DC)
Maximum DC Reverse Current
(at rated DC blocking voltage)
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Junction Temperature
Storage Temperature
Note:
1.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2.Thermal resistance from junction to case
3. Suffix "R" for reverse polarity
20%
RATINGS
T
=25oC
a
T
=100oC
a
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
J
(ja)
R
θ
T
J
T
STG
SB
820SB830SB835SB840SB850SB860
UNITS
20 30 35 40 50 60 V
14 21 25 28 35 42 V
20 30 35 40 50 60 V
8.0
150
0.65 0.75
5.0
50.0
700 450
2.5
o
-65 to +125 -65 to +150
-65 to +150
http://www.sse-diode.com
mA
mA
pF
C/W
o
o
A
A
V
C
C
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