SHANGHAI SUNRISE ELECTRONICS CO S1A, S1D, S1B, S1K, S1J Datasheet
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SHANGHAI SUNRISE ELECTRONICS CO., LTD.
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S1A THRU S1M
SURFACE MOUNT GLASS
PASSIVATED RECTIFIER
VOLTAGE: 50 TO 1000VCURRENT: 1.0A
FEATURES
• Ideal for surface mount pick and
place application
• Low profile package
• Built-in strain relief
• High surge capability
• High temperature soldering guaranteed:
o
260
C/10sec/at terminal
MECHANICAL DATA
• Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
MAX. .110
MIN. .100(2.54).157(3.99).052(1.32).006(0.152
MAX. .208
MIN. .194(4.93).078(1.98).004(0.102).030(0.76
TECHNICAL
SPECIFICATION
SMA/DO-214AC
B
A
F
G
ABCD
2.79).177(4.50).058(1.47).012(0.305
EFGH
5.28).090(2.29).008(0.203).060(1.52
Dimensions in inches and (millimeters)
C
D
H
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(TL=100oC)
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
(at rated forward current)
Maximum DC Reverse Current
(at rated DC blocking voltage)
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Storage and Operation Junction Temperature
Note:
1.Measured at 1.0 MHz and applied voltage of 4.0V
2.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area
T
=25oC
a
=125oC
T
a
SYMBOL S1A S1B S1D S1G S1J S1K S1M UNITS
V
RRM
V
RMS
V
I
F(AV)
I
FSM
V
I
C
R
θ
T
STG,TJ
DC
F
R
J
(ja)
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
50 100 200 400 600 800 1000 V
1.0 A
30
1.1
5.0
200
15
30
-65 to +150
dc
A
V
µA
µA
pF
o
C/W
o
C
http://www.sse-diode.com
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