SHANGHAI SUNRISE ELECTRONICS CO RS1A, RS1B, RS1D, RS1G, RS1M Datasheet

SHANGHAI SUNRISE ELECTRONICS CO., LTD.

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RS1A THRU RS1M

SURFACE MOUNT FAST

SWITCHING RECTIFIER

VOLTAGE: 50 TO 1000V CURRENT: 1.0A

FEATURES

• Ideal for surface mount pick and
place application

• Low profile package

• Built-in strain relief

• High surge capability

• Glass passivated chip

• Fast recovery for high efficiency

• High temperature soldering guaranteed:

o

260

C/10sec/at terminal

MECHANICAL DATA

• Terminal: Plated leads solderable per
MIL-STD 202E, method 208C

• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy

• Polarity: Color band denotes cathode

MAX. .110

MIN. .100(2.54).157(3.99).052(1.32).006(0.152

MAX. .208

MIN. .194(4.93).078(1.98).004(0.102).030(0.76

Dimensions in inches and (millimeters)

TECHNICAL

SPECIFICATION

SMA/DO-214AC

B

A

F

G

ABCD

2.79).177(4.50).058(1.47).012(0.305

EFGH

5.28).090(2.29).008(0.203).060(1.52

C

D

H

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated,for capacitive load,
derate current b

Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current

=110oC)

(T

L

Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
(at rated forward current)
Maximum DC Reverse Current
(at rated DC blocking voltage)
Maximum Reverse Recovery Tim
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Storage and Operation Junction Temperature

Note:

1.Reverse recovery condition I

2.Measured at 1.0 MHz and applied voltage of 4.0V

3.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area

20%

RATINGS

DC

J

dc

RS1ARS1BRS1DRS1GRS1JRS1KRS

50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
50 100 200 400 600 800 1000 V

1.0 A

30

F

150 500

1.3

5.0

200

15
30

-50 to +150

SYMBOL

V

RRM

V

RMS

V

I

F(AV)

I

FSM

V

=25oC

T

a

=125oC

T

a

(Note 1) trr 250 nS

=0.5A, IR=1.0A,Irr=0.25A.

F

I

C

R

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STG,TJ

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(ja)

http://www.sse-diode.com

1M

UNITS

A

V

µA
µA

pF

o

C/W

o

C