SHANGHAI SUNRISE ELECTRONICS CO RC30S06G, RC30S08G, RC30S10G, RC30S01G, RC30S02G Datasheet
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SHANGHAI SUNRISE ELECTRONICS CO., LTD.
RC30S01G THRU RC30S10G
SILICON GPP
CELL RECTIFIER
TECHNICAL
SPECIFICATION
VOLTAGE: 100 TO 1000V CURRENT: 30A
FEATURES
• Glass passivated junction chip
• High surge capability
• Solderable electrode surfaces
• Ideal for hybrids
MECHANICAL DATA
• Polarity: Bottom or upper electrode denotes
cathode according to the notice
in package
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load, derate
current by 20%)
RATINGS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
=55oC)
(T
a
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
(at rated forward current)
Maximum DC Reverse Current
(at rated DC blocking voltage)
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 3)
Storage and Operation Junction Temperature
Note:
1. Measured at 1 MHz and applied voltage of 4.0V
2. When mounted to heat sink from body.
3. Thermal resistance from junction to ambient.
(Note 2)
=25oC
T
a
T
=150oC
a
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
J
(ja)
R
θ
T
STG,TJ
RC30S
01G
100 200 400 600 800 1000 V
100 200 400 600 800 1000 V
dc
RC30S
02G
70 140 280 420 560 700 V
RC30S
04G
RC30S
06G
30 A
400 A
1.00 V
10
750
300
1
-50 to +150
RC30S
08G
RC30S
10G
UNITS
µA
µA
pF
o
C/W
o
C
http://www.sse-diode.com
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