SHANGHAI SUNRISE ELECTRONICS CO RC10S01G, RC10S02G, RC10S04G, RC10S06G, RC10S08G Datasheet
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SHANGHAI SUNRISE ELECTRONICS CO., LTD.
RC10S01G THRU RC10S10G
SILICON GPP
CELL RECTIFIER
VOLTAGE: 100 TO 1000V CURRENT: 10A
FEATURES
• Glass passivated junction chip
• High surge capability
• Solderable electrode surfaces Ideal for hybrids
MECHANICAL DATA
• Polarity: Bottom or upper electrode denotes
cathode according to the notice
in package
Dimensions in inches and (millimeters)
TECHNICAL
SPECIFICATION
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load, derate
current by 20%)
RATINGS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(Ta=55oC)
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
(at rated forward current)
Maximum DC Reverse Current
(at rated DC blocking voltage)
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 3)
Storage and Operation Junction Temperature
Note:
1. Measured at 1 MHz and applied voltage of 4.0V
2. When mounted to heat sink from body.
3. Thermal resistance from junction to ambient.
(Note 2)
=25oC
T
a
T
=150oC
a
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
J
(ja)
R
θ
T
STG,TJ
RC10S
01G
100 200 400 600 800 1000 V
100 200 400 600 800 1000 V
dc
RC10S
02G
70 140 280 420 560 700 V
RC10S
04G
10 A
400
1.0
10
300
300
-50 to +150
RC10S
06G
1
RC10S
08G
RC10S
10G
UNITS
µA
µA
pF
o
C/W
o
A
V
C
http://www.sse-diode.com
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