SHANGHAI SUNRISE ELECTRONICS DB3 Datasheet

SHANGHAI SUNRISE ELECTRONICS CO., LTD.

(

)

DB3

BIDIRECTIONAL

TRIGGER DIODE

BREAKOVER VOLTAGE: 32V

POWER: 150mW

TECHNICAL

SPECIFICATION

FEATURES

DO - 35

• VBO: 26 ~ 36V version

• Low breakover current

• High temperature soldering guaranteed:

o

250

C/10S/9.5mm lead length

at 5 lbs tension

1.0 (25.4)
MIN.

.120 (3.0)
.200 (5.1)

.060 (1.5)
.090 (2.3)

DIA.

MECHANICAL DATA

• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C

• Case: Glass,hermetically sealed

• Mounting position: Any

Dimensions in inches and (millimeters)

1.0 (25.4)
MIN.

.018 (0.46)
.022 (0.56)

DIA.

MAXIMUM RATINGS AND CHARACTERISTICS

Rating at 25oC ambient temperature unless otherwise specified

RATINGS

Breakover Voltage * C=22nF ** 26 32 36 V
Breakover Voltage Symmetry C=22nF ** -3 3 V
Dynamic Breakover Voltage * (Note 1) 5 V
Output Voltage * 5 V
Breakover Current * C=22nF ** 100 µA
Rise Time * 1.5 µS
Leakage Current *

Power Dissipation on Printed Circuit
Repetitive Peak on-state Current

Thermal Junction to Ambient 400
Resistances Junction to Lead 150
Operating Junction and Storage
Temperature Range

* : Electrical characteristic applicable in forward and reverse directions.
** : Connected in parallel with the devices.

TEST

CONDITION

V

=0.5V

R

Ta=65

tp=20µS
f=100Hz

BO

o

C

SYMBOL

V

BO

|+ VBO|-|-VBO|

|∆V ± |

V

O

I

BO

tr
I

B

Pd

I

TRM

Rθ(ja)

R

(jl)

θ

T

J,TSTG

Min. Typ. Max.

VALUE

10 µA

150 mW

2A

-40 125

UNITS

o

C/W

o

C

Note:

1. I

from IBO to 10mA.

F

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