SHANGHAI SUNRISE ELECTRONICS 1N5819, 1N5818, 1N5817 Datasheet
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
1N5817 THRU 1N5819
SCHOTTKY BARRIER
RECTIFIER
VOLTAGE: 20 TO 40V CURRENT: 1.0A
FEATURES
• Epitaxial construction for chip
• High current capability
• Low forward voltage drop
• Low power loss, high efficiency
• High surge capability
• High temperature soldering guaranteed:
o
250
C/10sec/0.375"(9.5mm) lead length
at 5 lbs tension
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
• Mounting position: Any
TECHNICAL
SPECIFICATION
DO - 41
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(9.5mm lead length, at TL=90oC)
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Forward Voltage (at 1.0A DC)
Maximum DC Reverse Current
(at rated DC blocking voltage)
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Storage and Operation Junction Temperature
Note:
1.Measured at 1.0 MHz and applied reverse voltage of 4.0V
2.Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, vertical P.C. board mounted
=25oC
T
a
=100oC
T
a
SYMBOL UNITS
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
J
R
(ja)
θ
T
STG,TJ
1N5817 1N5818 1N5819
20 30 40
14 21 28
20 30 40
1.0
25 A
0.45 0.55 0.6
1.0
10.0
110
50
-65 to +125
dc
http://www.sse-diode.com
mA
mA
pF
o
C/W
o
V
V
V
A
V
C
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