SHANGHAI SUNRISE ELECTRONICS 1N5408G, 1N5407G, 1N5406G, 1N5404G, 1N5402G Datasheet
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SHANGHAI SUNRISE ELECTRONICS CO., LTD.
1N5400G THRU 1N5408G
GLASS PASSIVATED
JUNCTION RECTIFIER
VOLTAGE: 50 TO 1000V CURRENT: 3.0A
FEATURES
• Molded case feature for auto insertion
• Glass passivated chip
• High current capability
• Low leakage current
• High surge capability
• High temperature soldering guaranteed:
o
250
C/10sec/0.375"(9.5mm) lead length
at 5 lbs tension
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
• Mounting position: Any
TECHNICAL
SPECIFICATION
DO - 201AD
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(9.5mm lead length, at T
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
(at rated forward current)
Maximum DC Reverse Current
(at rated DC blocking voltage)
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Storage and Operation Junction Temperature
Note:
1.Measured at 1.0 MHz and applied voltage of 4.0V
2.Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C. board mounted
=105oC)
L
T
=25oC
a
=100oC
T
a
SYMBOL
V
RRM
V
RMS
V
I
F(AV)
I
FSM
V
I
C
R
θ
T
STG,TJ
1N54
00G
DC
F
R
J
(ja)
dc
1N54
01G
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
50 100 200 400 600 800 1000 V
1N54
02G
-65 to +150
1N54
04G
1N54
06G
3.0
200 A
1.0
5.0
300
40
30
1N54
07G
1N54
08G
UNITS
µA
µA
pF
o
C/W
o
http://www.sse-diode.com
A
V
C
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