SHANGHAI SUNRISE ELECTRONICS CO., LTD.
IN4148
SILICON EPITAXIAL PLANAR
SWITCHING DIODE
REVERSE VOLTAGE: 75V
FORWARD CURRENT: 150mA
FEATURES
• Small glass structure ensures high reliability
• Fast switching
• Low leakage
• High temperature soldering guaranteed:
o
250
C/10S/9.5mm lead length
at 5 lbs tension
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Glass,hermetically sealed
• Polarity: Color band denotes cathode
• Mounting position: Any
TECHNICAL
SPECIFICATION
DO - 35
1.0 (25.4)
MIN.
.060 (1.5)
.090 (2.3)
.120 (3.0)
.200 (5.1)
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
.018 (0.46)
.022 (0.56)
DIA.
DIA.
MAXIMUM RATINGS AND CHARACTERISTICS
(Ratings at 25oC ambient temperature unless otherwise specified)
RATINGS
Reverse Voltage
Peak Reverse Voltage
Forward Current (average)
Repetitive Forward Peak Current
Forward Voltage (I
Reverse Current (V
Reverse Current (V
Reverse Current (V
Capacitance (note 1) Ct 4 pF
Reverse Recovery Time (note 2)
Thermal Resistance (junction to ambient) (note 3)
Operating Junction and Storage Temperature Range
Notes:
1: V
2: I
3: Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
=0V, f=1 MHz
R
=10mA to IR=1mA, VR=6V, RL=100
F
=10mA) V
F
=20V)
R
=75V)
R
=20V,TJ=100oC)
R
SYMBOL VALUE UNITS
V
V
I
FRM
I
I
R
θ
T
STG,TJ
RM
I
O
R1
R2
I
F
(ja)
R
F
75 V
100 V
150 mA
300 mA
1V
25 nA
5 µA
50
4nS
0.35
-55 +175
o
C/mW
o
C
A
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