Shandong 2SB1197K Schematic [ru]

SEMICONDUCTOR

2SB1197K

Shandong Yiguang Electronic Joint stock Co., Ltd

TECHNICAL DATA

PNP EPITAXIAL SILICON TRANSISTOR

LOW FREQUENCY TRANSISTOR

*

Feature:

(1) Low Vce(sat)

Vce≤-0.5V

(Ic/Ib= -0.5A/-50mA)

(2) Ic= -0.8A

(3) Complements the 2SD1781K

Package:

SOT-23

ABSOLUTE MAXIMUM RATINGS at Ta=25℃

Collector-Emitter Voltage Vceo -32 V

Collector-Base Voltage Vcbo -40 V

Collector Current Ic -0.8 A

Collector Dissipation Ta=25℃*

Junction Temperature Tj 150

Storage Temperature Tstg -55-150

Characteristic Symbol Rating Unit

200 mW

P

D

℃
℃

PIN:

STYLE

NO.1 B E C

1 2 3

ELECTRICAL CHARACTERISTICS at Ta=25℃

Characteristic Symbol Min Typ Max Unit Test Conditions

Collector-Base Breakdown Voltage BVcbo -40

Collector-Emitter Breakdown Voltage# BVceo -32

Emitter-Base Breakdown Voltage BVebo -5

Collector-Base Cutoff Current Icbo

Emitter-Base Cutoff Current Iebo -0.5 uA Veb= -4V

DC Current Gain Hfe 120 390 Vce= -3V Ic= -100mA

Collector-Emitter Saturation Voltage Vce(sat) -0.5 V Ic= -500mA Ib= -50mA

Output Capacitance Cob 12 30 PF Vcb= -10V Ie=0 f=1MHz

Current Gain-Bandwidth Product fT 50 200 MHz Vce= -5V Ie= 50mA

-0.5 uA Vcb= -20V

V Ic= -50uA

V Ic= -1mA

V Ie= -50uA

f=100MHZ

Total Device Dissipation : FR=1X0.75

*

# Pulse Test: Pulse Width ≤300uS,Duty cycle ≤2%

DEVICE MARKING:

2SB1197K=AHR

0.062in Board,Derate 25℃.

X

SEMICONDUCTOR

2SB1197K

Shandong Yiguang Electronic Joint stock Co., Ltd

TECHNICAL DATA

PNP EPITAXIAL SILICON TRANSISTOR

2SB1197K