SGS Thomson Microelectronics Z0405SF1AA2, Z0409MF0AA2, Z0409MF1AA2, Z0409NF0AA2, Z0409NF1AA2 Datasheet
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®
Z04 Series
STANDARD 4A TRIACS
October 2001 - Ed: 4
MAIN FEATURES:
DESCRIPTION
The Z04 series is suitable for general purpose AC
switching applications. They can be found in
applications such as touch light dimmers, fan
controllers, HID lamp ignitors,...
Different gate current sensitivities are available,
allowing optimized performances when controlled
directly from microcontrollers.
Symbol Value Unit
I
T(RMS)
4A
V
DRM/VRRM
600 to 800 V
I
GT (Q1)
3 to 25 mA
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current (full sine wave) TI = 30°C 4 A
Tamb = 25°C 1
I
TSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
F = 50 Hz t = 20 ms 20 A
F = 60 Hz t = 16.7 ms 21
I
²
tI
²
t Value for fusing
tp = 10 ms 2.2
A
²
s
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x IGT , tr ≤ 100 ns
F = 120 Hz Tj = 125°C 20 A/µs
I
GM
Peak gate current tp = 20 µs Tj = 125°C 1.2 A
P
G(AV)
Average gate power dissipation Tj = 125°C 0.2 W
T
stg
T
j
Storage junction temperature range
Operating junction temp erature range
- 40 to + 150
- 40 to + 125
°C
G
A2
A1
A2
A1
G
TO202-3
(Z04xxF)
Z04 Series
2/6
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
STATIC CHARACTERISTICS
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
THERMAL RESISTANCES
Symbol Test Conditions Quadrant Z04xx
Unit
02 05 09 10
I
GT
(1)
V
D
= 12 V RL = 30 Ω
ALL MAX. 3 5 10 25
mA
V
GT
ALL MAX. 1.3 V
V
GD
VD = V
DRM
RL = 3.3 kΩ Tj = 125°C
ALL MIN. 0.2
V
I
H
(2)
I
T
= 50 mA
MAX. 3 5 10 25 mA
I
L
IG = 1.2 I
GT
I - III - IV MAX. 6 10 15 25 mA
II 12 15 25 50
dV/dt (2) V
D
= 67 %V
DRM
gate open Tj = 110°C
MIN. 10 20 100 200 V/µs
(dV/dt)c (2) (dI/dt)c = 1.8 A/ms
Tj = 110°C MIN. 0.5 1 2 5 V/µs
Symbol Test Conditions Value Unit
V
TM
(2) ITM = 5.5 A tp = 380 µs
Tj = 25°C MAX. 2.0 V
V
to
(2)
Threshold voltage Tj = 125°C MAX. 0.95 V
R
d
(2)
Dynamic resistance Tj = 125°C MAX. 180 mΩ
I
DRM
I
RRM
V
DRM
= V
RRM
Tj = 25°C
MAX.
5µA
Tj = 125°C 0.5 mA
Symbol Parameter Value Unit
R
th(j-l)
Junction to lead (AC)
15
°C/W
R
th(j-a)
Junction to ambient 100 °C/W
Z04 Series
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PRODUCT SELECTOR
ORDERING INFORMATION
OTHER INFORMATION
Note: xx = sensitivity, y = voltage
Part Number
Voltage
Sensitivity Type
Package
600 V 700 V 800 V
Z0402MF X 3 mA Standard TO202-3
Z0402SF X 3 mA Standard TO202-3
Z0402NF X 3 mA Standard TO202-3
Z0405MF X 5 mA Standard TO202-3
Z0405SF X 5 mA Standard TO202-3
Z0405NF X 5 mA Standard TO202-3
Z0409MF X 10 mA Sta ndar d TO202-3
Z0409SF X 10 mA Standar d TO202-3
Z0409NF X 10 mA Standard TO202-3
Z0410MF X 25 mA Sta ndar d TO202-3
Z0410SF X 25 mA Standar d TO202-3
Z0410NF X 25 mA Standard TO202-3
Part Number Marking Weight
Base
quantity
Packing
mode
Z04xxyF 0AA2 Z04xxyF 0.8 g 50 Tube
Z04xxyF 1AA2 Z04xxyF 0.8 g 250 Bulk
Z 04 02 M F 0AA2
TRIAC
SERIES
CURRENT:4A
SENSITIVITY:
02: 3mA
05: 5mA
09: 10mA
10: 25mA
VOLTAGE:
M: 600V
S: 700V
N: 800V
PACKAGE:
F:TO202-3
PACKING MODE:
0AA2:Tube
1AA2: Bulk
Blank
Z04 Series
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Fig. 1: Maximum power dissipation versus RMS
on-state current (full cycle).
Fig. 2: RMS on-state current versus ambient
temperature (full cycle).
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration.
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 5: Surge peak on-state current versus
number of cycles.
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
1
2
3
4
5
6
7
IT(RMS)(A)
P(W)
0 25 50 75 100 125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
IT(RMS)(A)
Rth(j-a)=Rth(j-l)
Rth(j-a)=100°C/W
Tamb(°C)
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
1E-3
1E-2
1E-1
1E+0
tp(s)
K=[Zth(j-a)/Rth(j-a)]
-40 -20 0 20 40 60 80 100 120 140
0.0
0.5
1.0
1.5
2.0
2.5
Tj(°C)
IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]
IGT
IH & IL
1 10 100 1000
0
5
10
15
20
25
Number of cycles
ITSM(A)
Non repetitive
Tj initial=25°C
Repetitive
Tamb=25°C
One cycle
t=20ms
0.01 0.10 1.00 10.00
1
10
100
500
tp (ms)
ITSM (A), I²t (A²s)
Tj initial=25°C
ITSM
I²t
dI/dt limitation:
20A/µs
Z04 Series
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Fig. 7: On-state characteristics (maximum
values).
Fig. 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.1
1.0
10.0
20.0
VTM(V)
ITM(A)
Tj=25°C
Tj max.
Vto= 0.95V
Rd= 180 m
W
Tj=Tj max.
0.1 1.0 10.0 100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
(dV/dt)c (V/µs)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
Z0402
Z0405
Z0409
Z0410
0 25 50 75 100 125
0
1
2
3
4
5
6
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
Tj (°C)
Z04 Series
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by impl i cation or ot herwise under an y patent or patent ri ghts of STM i croelectro ni cs. Specifications mentioned in this publication are subject
to change wi t hout notice. T hi s publicati on supersedes and replace s al l in formation previously supplied. ST M i croelectro ni cs products are not
authori zed for use as critical com ponents in li fe support d evices or syst em s without express writ ten approva l of S T M i croelectr o nics.
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PACKAGE MECHANICAL DAT A
TO202-3 (Plastic)
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 10.1 0.398
C 7.3 0.287
D 10.5 0.413
F 1.5 0.059
H 0.51 0.020
J 1.5 0.059
M 4.5 0.177
N 5.3 0.209
N1 2.54 0.100
O 1.4 0.055
P 0.7 0.028
A
O
P
N
N1
F
C
D
J
H
M
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