SGS Thomson Microelectronics Z0405SF1AA2, Z0409MF0AA2, Z0409MF1AA2, Z0409NF0AA2, Z0409NF1AA2 Datasheet
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Z04 Series
STANDARD 4A TRIACS
October 2001 - Ed: 4
MAIN FEATURES:
DESCRIPTION
The Z04 series is suitable for general purpose AC
switching applications. They can be found in
applications such as touch light dimmers, fan
controllers, HID lamp ignitors,...
Different gate current sensitivities are available,
allowing optimized performances when controlled
directly from microcontrollers.
Symbol Value Unit
I
T(RMS)
4A
V
DRM/VRRM
600 to 800 V
I
GT (Q1)
3 to 25 mA
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current (full sine wave) TI = 30°C 4 A
Tamb = 25°C 1
I
TSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
F = 50 Hz t = 20 ms 20 A
F = 60 Hz t = 16.7 ms 21
I
²
tI
²
t Value for fusing
tp = 10 ms 2.2
A
²
s
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x IGT , tr ≤ 100 ns
F = 120 Hz Tj = 125°C 20 A/µs
I
GM
Peak gate current tp = 20 µs Tj = 125°C 1.2 A
P
G(AV)
Average gate power dissipation Tj = 125°C 0.2 W
T
stg
T
j
Storage junction temperature range
Operating junction temp erature range
- 40 to + 150
- 40 to + 125
°C
G
A2
A1
A2
A1
G
TO202-3
(Z04xxF)
Z04 Series
2/6
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
STATIC CHARACTERISTICS
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
THERMAL RESISTANCES
Symbol Test Conditions Quadrant Z04xx
Unit
02 05 09 10
I
GT
(1)
V
D
= 12 V RL = 30 Ω
ALL MAX. 3 5 10 25
mA
V
GT
ALL MAX. 1.3 V
V
GD
VD = V
DRM
RL = 3.3 kΩ Tj = 125°C
ALL MIN. 0.2
V
I
H
(2)
I
T
= 50 mA
MAX. 3 5 10 25 mA
I
L
IG = 1.2 I
GT
I - III - IV MAX. 6 10 15 25 mA
II 12 15 25 50
dV/dt (2) V
D
= 67 %V
DRM
gate open Tj = 110°C
MIN. 10 20 100 200 V/µs
(dV/dt)c (2) (dI/dt)c = 1.8 A/ms
Tj = 110°C MIN. 0.5 1 2 5 V/µs
Symbol Test Conditions Value Unit
V
TM
(2) ITM = 5.5 A tp = 380 µs
Tj = 25°C MAX. 2.0 V
V
to
(2)
Threshold voltage Tj = 125°C MAX. 0.95 V
R
d
(2)
Dynamic resistance Tj = 125°C MAX. 180 mΩ
I
DRM
I
RRM
V
DRM
= V
RRM
Tj = 25°C
MAX.
5µA
Tj = 125°C 0.5 mA
Symbol Parameter Value Unit
R
th(j-l)
Junction to lead (AC)
15
°C/W
R
th(j-a)
Junction to ambient 100 °C/W
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