SGS Thomson Microelectronics WS57C256F Datasheet
PRODUCT SELECTION GUIDE
PARAMETER WS57C256F-55 WS57C256F-70
Address Access Time (Max) 55 ns 70 ns
Output Enable Time (Max) 25 ns 30 ns
WS57C256F
V
CC
A
14
A
13
A
8
A
9
A
11
OE
A
10
CE/PGM
O
7
O
6
O
5
O
4
O
3
V
PP
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
O
0
O
1
O
2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A
8
A
9
A
11
NC
OE
A
10
CE/PGM
O
7
O
6
A
6
A
5
A
4
A
3
A
2
A
1
A
0
NC
O
0
A7A12VPPNC
VCCA14A
13
O1 O2 NC O3 O4 O
5
1
432
32 31
30
29
28
27
26
25
24
23
22
21
5
6
7
8
9
10
11
12
13
14 15 1617181920
GND
TOP VIEW
Chip Carrier CERDIP
PIN CONFIGURATION
4-17
MILITARY HIGH SPEED 32K x8 CMOS EPROM
KEY FEATURES
• Fast Access Time • EPI Processing
— 55 ns
— Latch-up Immunity Up to 200 mA
• Low Power Consumption • Standard EPROM Pinout
• DESC SMD No. 5962-86063
GENERAL DESCRIPTION
The WS57C256F is a High Performance 256K UV Erasable Electrically Programmable Read Only Memory. It is
manufactured using an advanced CMOS process technology enabling it to operate at speeds as fast as 55 ns
Access Time.
Two major features of the WS57C256F are its Low Power and High Speed. While operating in a TTL environment it
consumes less than 120 mA while cycling at full speed. Additionally, the WS57C256F can be placed in a standby
mode which drops operating current below 5 mA in a TTL environment and 500 µA in a CMOS environment.
The WS57C256F also has exceptional output drive capability. It can source 4 mA and sink 16 mA per output.
The WS57C256F is configured in the standard EPROM pinout which provides an easy upgrade path for systems
which are currently using standard EPROMs.
PINS
CE/
OE A9A0VPPVCCOUTPUTS
MODE
PGM
Read VILVILXXVCCV
CCDOUT
Output
Disable
XVIHXXVCCV
CC
High Z
Standby V
IH
XXXVCCV
CC
High Z
Program VILV
IH
XXV
PP
2
V
CC
D
IN
Program
Verify
XVILXXV
PP
2
V
CCDOUT
Program
Inhibit
VIHV
IH
XXV
PP
2
V
CC
High Z
Signature
3
VILVILV
H
2
VILVCCV
CC
23 H
4
VILVILV
H
2
VIHVCCV
CC
EO H
5
MODE SELECTION
NOTES:
1. X can be VILor VIH. 4. Manufacturer Signature.
2. VIH= VPP= 12.75 ± 0.25 V. 5. Device Signature.
3. A1 – A8, A10 – A14 = VIL.
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ORDERING INFORMATION
SPEED PACKAGE PACKAGE
OPERATING WSI
PART NUMBER
(ns) TYPE DRAWING
TEMPERATURE MANUFACTURING
RANGE PROCEDURE
WS57C256F-55CMB 55 32 Pad CLLCC C2 Military MIL-STD-883C
WS57C256F-55DMB 55 28 Pin CERDIP, 0.6" D2 Military MIL-STD-883C
WS57C256F-55TMB 55 28 Pin CERDIP, 0.3" T2 Military MIL-STD-883C
WS57C256F-70CMB* 70 32 Pad CLLCC C2 Military MIL-STD-883C
WS57C256F-70DMB* 70 28 Pin CERDIP, 0.6" D2 Military MIL-STD-883C
WS57C256F
4-18
NOTES: The actual part marking will not include the initials "WS."
*SMD product. See page 4-1 for DESC SMD number.
PROGRAMMING/ALGORITHMS/ERASURE/PROGRAMMERS
REFER TO
PAGE 5-1
The WS57C256F is programmed using Algorithm D shown on page 5-9.
For complete data sheet and electrical specifications see page 3-13.
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