SGS Thomson Microelectronics WS57C128FB Datasheet

PRODUCT SELECTION GUIDE

PARAMETER WS57C128FB-35 WS57C128FB-45 WS57C128FB-55 WS57C128FB-70

Address Access Time (Max) 35 ns 45 ns 55 ns 70 ns
Chip Select Time (Max) 35 ns 45 ns 55 ns 70 ns
Output Enable Time (Max) 20 ns 25 ns 25 ns 25 ns

WS57C128FB

3-7

HIGH SPEED 16K x8 CMOS EPROM

KEY FEATURES

• Very Fast Access Time • Standard EPROM Pinout

— 35 ns

• DIP and Surface Mount Packaging

• Low Power Consumption Available

• EPI Processing

— Latch-up Immunity Up to 200 mA

GENERAL DESCRIPTION

The WS57C128FB is a High Performance 128K UV Erasable Electrically Programmable Read Only Memory. It is
manufactured with an advanced CMOS technology which enables it to operate at Bipolar speeds while consuming
only 90 mA.

Two major features of the WS57C128FB are its Low Power and High Speed. These features make it an ideal
solution for applications which require fast access times, low power, and non-volatility. Typical applications include
systems which do not utilize mass storage devices and/or are board space limited.

The WS57C128FB is configured in the standard EPROM pinout which provides an easy upgrade path for systems
which are currently using standard EPROMs. The EPROMs are available in both 600 Mil DIP packages, and both
J-leaded and leadless surface mount packages.

V

CC

PGM
A

13

A

8

A

9

A

11

OE
A

10

CE
O

7

O

6

O

5

O

4

O

3

V

PP

A

12

A

7

A

6

A

5

A

4

A

3

A

2

A

1

A

0

O

0

O

1

O

2

GND

1
2
3
4
5
6
7
8
9
10
11
12
13
14

28
27
26
25
24
23
22
21
20
19
18
17
16
15

A

8

A

9

A

11

NC
OE
A

10

CE
O

7

O

6

A

6

A

5

A

4

A

3

A

2

A

1

A

0

NC

O

0

A7A12VPPNC

VCCPGM

A

13

O1 O2 NC O3 O4 O

5

1

432

32 31

30

29
28
27
26
25
24
23
22
21

5
6
7
8
9
10
11
12
13

14 15 1617181920

GND

TOP VIEW

Chip Carrier CERDIP

PIN CONFIGURATION

PINS

PGM CE OE V

PPVCC

OUTPUTS

MODE

Read X V

ILVILVCCVCCDOUT

Output
Disable

XXVIHV

CCVCC

High Z

Standby X V

IH

XVCCV

CC

High Z

Program V

IL

V

IL

VIHV

PPVCC

D

IN

Program
Verify

V

IHVIL

VILV

PPVCCDOUT

Program
Inhibit

XVIHXVPPV

CC

High Z

X can be VILor VIH.

MODE SELECTION

Return to Main Menu

AC READ CHARACTERISTICS

Over Operating Range with VPP= V

CC

PARAMETER SYMBOL

57C128FB-35 57C128FB-45 57C128FB-55 57C128FB-70

UNITS

MIN MAX MIN MAX MIN MAX MIN MAX

Address to Output Delay t

ACC

35 45 55 70

CE to Output Delay t

CE

35 45 55 70

OE to Output Delay t

OE

20 25 25 25 ns

Output Disable to
Output Float

t

DF

20 25 25 25

Address to Output Hold t

OH

0000

DC READ CHARACTERISTICS

Over Operating Range with VPP= V

CC

SYMBOL PARAMETER TEST CONDITIONS MIN MAX UNITS

V

IL

Input Low Voltage (Note 5) –0.1 0.8 V

V

IH

Input High Voltage (Note 5) 2.0 V

CC

+ 0.3 V

V

OL

Output Low Voltage IOL= 16 mA 0.4 V

V

OH

Output High Voltage IOH= –4 mA 2.4 V

I

SB1

VCCStandby Current (CMOS) (Notes 1 and 3) 500 µA

I

SB2

VCCStandby Current (TTL) (Notes 2 and 3) 15 mA

(Notes 1 and 4)

Comm'l 30 mA

I

CC1

VCCActive Current (CMOS)

Outputs Not Loaded

Industrial 40 mA
Military 40 mA

(Notes 2 and 4)

Comm'l 50 mA

I

CC2

VCCActive Current (TTL)

Outputs Not Loaded

Industrial 60 mA
Military 60 mA

I

PP

VPPSupply Current VPP= V

CC

100 µA

V

PP

VPPRead Voltage VCC–0.4 V

CC

V

I

LI

Input Leakage Current VIN= 5.5V or Gnd –10 10 µA

I

LO

Output Leakage Current V

OUT

= 5.5 V or Gnd –10 10 µA

OPERATING RANGE

RANGE TEMPERATURE V

CC

Commercial 0°C to +70°C +5V ± 10%
Industrial –40°C to +85°C +5V ± 10%
Military –55°C to +125°C +5V ± 10%

WS57C128FB

3-8

ABSOLUTE MAXIMUM RATINGS*

Storage Temperature............................–65° to + 150°C

Voltage on any Pin with

Respect to Ground ....................................–0.6V to +7V

VPPwith Respect to Ground...................–0.6V to + 13V

ESD Protection..................................................>2000V

*

NOTICE:

Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at these or any other conditions above
those indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of
time may affect device reliability.

NOTES: 1. CMOS inputs: GND ± 0.3V or VCC± 0.3V.

4. Add 4 mA/MHz for A.C. power component.

2. TTL inputs: VIL≤ 0.8V, VIH≥ 2.0V. 5. These are absolute voltages with respect to device ground pin and

3. Add 1 mA/MHz for A.C. power component. include all overshoots due to system and/or tester noise.
Do not attempt to test these values without suitable equipment.