PRODUCT SELECTION GUIDE
PARAMETER 27C010L-90 27C010L-12 27C010L-15 27C010L-17 27C010L-20
Address Access Time (Max) 90 ns 120 ns 150 ns 170 ns 200 ns
Chip Select Time (Max) 90 ns 120 ns 150 ns 170 ns 200 ns
Output Enable Time (Max) 35 ns 35 ns 40 ns 40 ns 40 ns
WS27C010L
TOP VIEW
Chip Carrier CERDIP
PIN CONFIGURATION
4-25
Military 128K x8 CMOS EPROM
KEY FEATURES
• High Performance CMOS • DESC SMD No. 5962-89614
— 90 ns Access Time
• Compatible with JEDEC 27010 and
• Fast Programming
27C010 EPROMs
• EPI Processing • JEDEC Standard Pin Configuration
— Latch-Up Immunity to 200 mA — 32 Pin CERDIP Package
— ESD Protection Exceeds 2000 Volts — 32 Pin Leadless Chip Carrier (CLLCC)
GENERAL DESCRIPTION
The WS27C010L is a performance oriented 1 Meg UV Erasable Electrically Programmable Read Only Memory
organized as 128K words x 8 bits/word. It is manufactured using an advanced CMOS technology which enables it to
operate at data access times as fast as 120 nsecs. The memory was designed utilizing WSI's patented self-aligned
split gate EPROM cell, resulting in a low power device with a very cost effective die size.
The WS27C010L 1 Meg EPROM provides extensive code store capacity for microprocessor, DSP, and
microcontroller-based systems. Its 120 nsec access time over the full Military temperature range provides the
potential of no-wait state operation. And where this parameter is important, the WS27C010L provides the user with
a very fast 35 nsec TOEoutput enable time.
The WS27C010L is offered in both a 32 pin 600 mil CERDIP, and a 32 pad Ceramic Leadless Chip Carrier
(CLLCC) for surface mount applications. Its standard JEDEC EPROM pinouts provide for automatic upgrade
density paths for existing 128K and 256K EPROM users.
A
14
A
13
A
8
A
9
A
11
OE
A
10
CE
O
7
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
O
0
A12A15A16VPPVCCPGM
NC
O1 O2 O3 O4 O5 O
6
1
432
32 31
30
29
28
27
26
25
24
23
22
21
5
6
7
8
9
10
11
12
13
14 15 1617181920
GND
V
CC
PGM
NC
A
14
A
13
A
8
A
9
A
11
OE
A
10
CE
O
7
O
6
O
5
O
4
O
3
V
PP
A
16
A
15
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
O
0
O
1
O
2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
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AC READ CHARACTERISTICS
Over Operating Range with V
PP
= VCC.
SYMBOL PARAMETER
-90 -12 -15 -17 -20
UNITS
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
t
ACC
Address to Output Delay 90 120 150 170 200
t
CE
CE to Output Delay 90 120 150 170 200
t
OE
OE to Output Delay 35 35 40 40 40
t
DF
Output Disable to
Output Float (Note 3)
35 35 40 40 40
ns
Output Hold from
t
OH
Addresses, CE or OE, 0 0 0 0 0
Whichever Occurred
First (Note 3)
DC READ CHARACTERISTICS
Over Operating Range. (See Above)
SYMBOL PARAMETER TEST CONDITIONS MIN MAX UNITS
V
IL
Input Low Voltage –0.5 0.8 V
V
IH
Input High Voltage 2.0 V
CC
+ 1 V
V
OL
Output Low Voltage IOL= 2.1 mA 0.4 V
V
OH
Output High Voltage IOH= –400 µA 3.5 V
I
SB1
VCCStandby Current (CMOS) CE = V
CC
± 0.3 V (Note 2) 100 µA
I
SB2
VCCStandby Current CE = V
IH
1mA
ICCVCCActive Current (TTL)
CE = OE = V
IL
F = 5 MHz 50 mA
(Note 1)
F = 8 MHz 60 mA
I
PP
VPPSupply Current VPP= V
CC
100 µA
V
PP
V
PP
Read Voltage V
CC
–0.4 V
CC
V
I
LI
Input Leakage Current VIN= 5.5 V or Gnd –10 10 µA
I
LO
Output Leakage Current V
OUT
= 5.5 V or Gnd –10 10 µA
WS27C010L
4-26
OPERATING RANGE
RANGE TEMPERATURE V
CC
Military –55°C to +125°C +5V ± 10%
ABSOLUTE MAXIMUM RATINGS*
Storage Temperature............................–65° to + 150°C
Voltage on any Pin with
Respect to Ground ....................................–0.6V to +7V
VPPwith Respect to Ground...................–0.6V to + 14V
V
CC
Supply Voltage with
Respect to Ground ....................................–0.6V to +7V
ESD Protection..................................................>2000V
NOTES: 1. The supply current is the sum of I
CC
and IPP. The maximum current value is with Outputs O0to O7unloaded.
2. CMOS inputs: VIL= GND ± 0.3V, VIH= VCC± 0.3 V.
*
NOTICE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at these or any other conditions above
those indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of
time may affect device reliability.
NOTE: 3.
This parameter is only sampled and is not 100% tested. Output Float is defined as the point where data is no longer driven – see timing
diagram.
SYMBOL PARAMETER CONDITIONS TYP
(6)
MAX UNITS
C
IN
Input Capacitance VIN= 0V 4 6 pF
C
OUT
Output Capacitance V
OUT
= 0V 8 12 pF
C
VPP
VPPCapacitance VPP= 0 V 18 25 pF
4-27
WS27C010L
AC READ TIMING DIAGRAM
t
ACC
t
OH
ADDRESS VALID
VALID OUTPUT
ADDRESSES
V
IH
V
IL
t
OE
t
DF
t
CE
CE
OE
V
IH
V
IH
V
IL
V
IH
V
IL
V
IL
HIGH ZHIGH Z
(5)
(4)
(4)
OUTPUT
CAPACITANCE
(5)
TA= 25°C, f = 1 MHz
100 pF
(INCLUDING SCOPE
AND JIG
CAPACITANCE)
820 Ω
2.01 V
D.U.T.
A.C. TESTING INPUT/OUTPUT WAVEFORMTEST LOAD
(High Impedance Test Systems)
2.4
0.4
2.0
0.8
2.0
0.8
TEST
POINTS
NOTE: 7. Provide adequate decoupling capacitance as close as possible to this device to achieve the published A.C. and D.C. parameters.
A 0.1 microfarad capacitor in parallel with a 0.01 microfarad capacitor connected between VCCand ground is recommended.
Inadequate decoupling may result in access time degradation or other transient performance failures.
NOTES: 5. This parameter is only sampled and is not 100% tested.
6. Typical values are for TA= 25°C and nominal supply voltages.
A.C. testing inputs are driven at 2.4 V for a logic "1" and 0.4 V
for a logic "0." Timing measurements are made at 2.0 V for a
logic "1" and 0.8 V for a logic "0".
NOTE: 4. OE may be delayed up to t
CE
– tOEafter the falling edge of CE without impact on tCE.
PROGRAMMING INFORMATION
DC CHARACTERISTICS
(TA= 25 ± 5°C, VCC= 6.25 ± 0.25 V, VPP= 12.75 ± 0.25 V. See Notes 8, 9 and 10)
SYMBOLS PARAMETER MIN MAX UNITS
I
LI
Input Leakage Current (VIN= VCCor Gnd) –10 10 µA
I
PP
VPPSupply Current During
60 mA
Programming Pulse (CE = PGM = VIL)
I
CC
VCCSupply Current 50 mA
V
IL
Input Low Voltage –0.1 0.8 V
V
IH
Input High Voltage 2.0 VCC+ 0.3 V
V
OL
Output Low Voltage During Verify (IOL= 2.1 mA) 0.4 V
V
OH
Output High Voltage During Verify (IOH= –400 µA) 3.5 V
SYMBOLS PARAMETER MIN TYP MAX UNITS
t
AS
Address Setup Time 2 µs
t
OES
Output Enable Setup Time 2 µs
t
OS
Data Setup Time 2 µs
t
AH
Address Hold Time 0 µs
t
OH
Data Hold Time 2 µs
t
DF
Chip Disable to Output Float Delay 0 55 ns
t
OE
Data Valid From Output Enable 55 ns
tVS/t
CES
VPPSetup Time/CE Setup Time 2 µs
t
PW
PGM Pulse Width 0.1 3 4 ms
WS27C010L
4-28
NOTES: 8. V
CC
must be applied either coincidentally or before V
PP
and removed either coincidentally or after VPP.
9. V
PP
must not be greater than 14 volts including overshoot. During CE = PGM = VIL, V
PP
must not be switched from 5 volts
to 12.75 volts or vice-versa.
10. During power up the PGM pin must be brought high (≥ VIH) either coincident with or before power is applied to VPP.
AC CHARACTERISTICS
(TA= 25 ± 5°C, VCC= 6.25 ± 0.25 V, VPP= 12.75 ± 0.25 V)
PROGRAMMING WAVEFORM
ADDRESS STABLE
ADDRESSES
V
PP
V
PP
V
CC
V
IH
V
IL
CE
DATA
t
AS
t
PW
t
OS
t
OH
t
OE
t
AH
t
DF
t
VS
t
CES
t
OES
DATA OUT
DATA IN STABLE
OE
PGM
V
IH
V
IL
V
IH
V
IL
VALID
HIGH Z
ORDERING INFORMATION
OPERATING WSI
PART NUMBER TEMPERATURE MANUFACTURING
RANGE PROCEDURE
WS27C010L-12CMB* 120 32 Pad CLLCC C2 Military MIL-STD-883C
WS27C010L-12DMB* 120 32 Pin CERDIP, 0.6" D4 Military MIL-STD-883C
WS27C010L-15CMB 150 32 Pad CLLCC C2 Military MIL-STD-883C
WS27C010L-15DMB 150 32 Pin CERDIP, 0.6" D4 Military MIL-STD-883C
WS27C010L-17CMB* 170 32 Pad CLLCC C2 Military MIL-STD-883C
WS27C010L-17DMB* 170 32 Pin CERDIP, 0.6" D4 Military MIL-STD-883C
WS27C010L-20CMB* 200 32 Pad CLLCC C2 Military MIL-STD-883C
WS27C010L-20DMB* 200 32 Pin CERDIP, 0.6" D4 Military MIL-STD-883C
4-29
WS27C010L
NOTE: 14. The actual part marking will not include the initials "WS."
*SMD product. See page 4-2 for SMD number.
PROGRAMMING/ALGORITHMS/ERASURE/PROGRAMMERS
REFER TO
PAGE 5-1
The WS27C010L is programmed using Algorithm E shown on page 5-11.
(This product can also be programmed by using National Semiconductor's 27C010 Programming Algorithm.)
SPEED PACKAGE PACKAGE
(ns) TYPE DRAWING
MODE
PINS
CE OE PGM A
9
A
0
V
PP
V
CC
OUTPUTS
Read V
IL
V
IL
X
(11)
X X X 5.0 V D
OUT
Output Disable X V
IH
XXXX5.0 V High Z
Standby V
IH
XXXXX5.0 V High Z
Programming V
IL
V
IH
V
IL
XXV
PP
(12)
6.0 V D
IN
Program Verify V
IL
V
IL
V
IH
XXV
PP
(12)
6.0 V D
OUT
Program Inhibit V
IH
XXXXV
PP
(12)
5.0 V High Z
Signature
Manufacturer
(13)
V
IL
V
IL
XV
H
(12)
V
IL
X 5.0 V 23 H
Device
(13)
V
IL
V
IL
XV
H
(12)
V
IH
X 5.0 V C1 H
MODE SELECTION
The modes of operation of the WS27C010L are listed below. A single 5 V power supply is required in the read
mode. All inputs are TTL levels except for VPPand A9for device signature.
NOTES: 11.X can be VILor VIH. 12.VH= VPP= 12.75 ± 0.25 V. 13.A1– A8, A10– A16= VIL.
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