SGS Thomson Microelectronics VNW100N04 Datasheet
VNW100N04
”OMNIFET”:
FULLY AUTOPROTECTED POWER MOSFET
PRELIMINARY DATA
November 1997
BLOCK DIAGRAM
TYPE V
clamp
R
DS(on)
I
lim
VNW10 0N0 4 42 V 0.012 Ω 100 A
■ LINEARCURRENTLIMITATION
■ THERMAL SHUT DOWN
■ SHORTCIRCUIT PROTECTION
■ INTEGRATEDCLAMP
■ LOW CURRENT DRAWN FROM INPUTPIN
■ DIAGNOSTICFEEDBACKTHROUGHINPUT
PIN
■ ESD PROTECTION
■ DIRECTACCESS TO THE GATE OF THE
POWERMOSFET(ANALOGDRIVING)
■ COMPATIBLEWITH STANDARD POWER
MOSFET
■ STANDARDTO-247 PACKAGE
DESCRIPTION
The VNW100N04 is a monolithic device made
using SGS-THOMSON Vertical Intelligent Power
M0 Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect
the chip in harsh enviroments.
Faultfeedback can be detected by monitoring the
voltageat the input pin.
1
2
3
TO-247
1/11
ABSOLUTEMAXIMUMRATING
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (Vin= 0 ) Int er nall y Clamped V
V
in
Input V ol ta ge 18 V
I
D
Drain Current Internally Limited A
I
R
Reverse DC Output Cur rent -100 A
V
esd
Elect r o st at ic Discharge (C= 100 pF , R=1. 5 KΩ) 2000 V
P
tot
Tot al Dis s ipation at Tc=25oC 208 W
T
j
Oper at i ng J un c t ion T em perature Internally Limit ed
o
C
T
c
Case Operating Temperature Internally Limited
o
C
T
stg
St orage Temperatur e -55 to 150
o
C
THERMAL DATA
R
thj-case
R
thj- amb
Ther mal Resistan ce Junction-cas e Max
Ther mal Resistan ce Junction-ambien t Max
0.6
30
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
=25oC unlessotherwise specified)
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
CLAMP
Drain-source Clamp
Volt age
ID=50A Vin= 0 36 42 48 V
V
CLTH
Drain-source Clamp
Thr eshold Vol ta ge
ID=2mA Vin=0 35 V
V
INCL
Input-Source Reverse
Clamp Volt age
Iin=-1mA -1 -0.3 V
I
DSS
Zer o Inpu t V oltage
Drain Current (V
in
=0)
V
DS
=13V Vin=0
V
DS
=25V Vin=0
50
200
µA
µA
I
ISS
Supply Current f rom
Input Pin
VDS=0V Vin= 10 V 250 500 µA
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
IN(th)
Input T hreshold
Volt age
VDS=VinID+Iin=1mA 0.8 3 V
R
DS(on)
St at ic D rain- s our ce On
Resistance
Vin=10V ID=50A
V
in
=5V ID=50A
0.012
0.015ΩΩ
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
g
fs
(∗)Forward
Tr ansc on ductance
VDS=13V ID=50A 40 60 S
C
oss
Out put Capacit anc e VDS=13V f=1MHz Vin= 0 2000 3000 pF
VNW100N04
2/11
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING(∗∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise T ime
Turn-off Delay Time
Fall T ime
VDD=15V Id=50A
V
gen
=10V R
gen
=10Ω
(see figure 3)
110
500
1000
600
250
900
1800
1000
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise T ime
Turn-off Delay Time
Fall T ime
VDD=15V Id=50A
V
gen
=10V R
gen
= 1000 Ω
(see figure 3)
2.2
3.5
22
12
3.5
6
30
18
µs
µs
µs
µs
(di/dt)
on
Tur n-on Current Slope VDD=15V ID=50A
V
in
=10V R
gen
=10Ω
55 A/µs
Q
i
Total Input Charge VDD=15V ID=50A Vin= 10 V 190 nC
SOURCE DRAIN DIODE
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
SD
(∗)ForwardOnVoltage ISD=50A Vin=0 1.6 V
t
rr
(∗∗)
Q
rr
(∗∗)
I
RRM
(∗∗)
Reverse Recov ery
Time
Reverse Recov ery
Charge
Reverse Recov ery
Current
I
SD
= 50 A di/dt = 10 0 A/µs
V
DD
=30V Tj=25oC
(see test circuit, figure 5)
800
5
15
ns
µC
A
PROTECTION
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
lim
Drain Cur rent Limit Vin=10V VDS=13V
V
in
=5V VDS=13V
70
70
100
100
140
140
A
A
t
dlim
(∗∗) Step Res pon se
Current Lim it
Vin=10V
V
in
=5V
50
13080200
µs
µs
T
jsh
(∗∗) Overtemperatu r e
Shut dow n
170
o
C
T
jrs
(∗∗) Overtemperatu r e Reset 155
o
C
I
gf
(∗∗) Fault Sink Current Vin=10V VDS=13V
V
in
=5V VDS=13V
50
20
mA
mA
E
as
(∗∗) S i ngle Pulse
Avalanche E ner gy
starting Tj=25oCVDD=20V
V
in
=10V R
gen
=1KΩ L=10mH
4J
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(∗∗) Parameters guaranteed by design/characterization
VNW100N04
3/11
During normal operation, the Input pin is
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC to 50 KHz. The only difference
from the user’s standpoint is that a small DC
current (I
iss
) flows into the Input pin in order to
supplythe internalcircuitry.
The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:
internally set at 42V, along with the rugged
avalanche characteristics of the Power
MOSFET stage give this device unrivalled
ruggedness and energy handling capability.
This feature is mainly important when driving
inductiveloads.
- LINEAR CURRENT LIMITER CIRCUIT: limits
the drain current Id to Ilim whatever the Input
pin voltage. When the current limiter is active,
the device operates in the linear region, so
power dissipation may exceed the capability of
the heatsink. Both case and junction
temperatures increase, and if this phase lasts
long enough, junction temperature may reach
the overtemperaturethreshold T
jsh
.
- OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION: these are based on sensing
the chip temperatureand are not dependent on
the input voltage. The location of the sensing
element on the chip in the power stage area
ensures fast, accurate detection of the junction
temperature. Overtemperaturecutout occurs at
minimum 170
o
C. The device is automatically
restarted when the chip temperature falls
below155
o
C.
- STATUS FEEDBACK: In the case of an
overtemperature fault condition, a Status
Feedback is provided through the Input pin.
The internal protection circuit disconnects the
input from the gate and connects it instead to
ground via an equivalent resistance of 100 Ω.
The failure can be detected by monitoring the
voltage at the Input pin, which will be close to
ground potential.
Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit (witha small increase in R
DS(on)
).
PROTECTION FEATURES
VNW100N04
4/11
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