SGS Thomson Microelectronics VNV14N04, VNK14N04FM, VNP14N04FI, VNB14N04 Datasheet

VNB14N04/K14N04FM



FULLY AUTOPROTECTED POWER MOSFET

TYPE V

VNB14N04
VNK14N04FM
VNP14N04FI
VNV14N04

■ LINEAR CURRENT LIMITATION

■ THERMALSHUTDOWN

■ SHORTCIRCUIT PROTECTION

■ INTEGRATEDCLAMP

■ LOW CURRENT DRAWN FROM INPUT PIN

■ DIAGNOSTICFEEDBACK THROUGH INPUT

clamp

42 V
42 V
42 V
42 V

PIN

■ ESD PROTECTION

■ DIRECT ACCESS TO THE GATE OF THE

POWERMOSFET(ANALOGDRIVING)

■ COMPATIBLEWITHSTANDARD POWER

MOSFET

DESCRIPTION

The VNB14N04, VNK14N04FM, VNP14N04FI
and VNV14N04 are monolithic devices made
using STMicroelectronics VIPower M0
Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect

BLOCK DIAGRAM (∗)

R

DS(on)

0.07 Ω

0.07 Ω

0.07 Ω

0.07 Ω

I

lim

14 A
14 A
14 A
14 A

VNP14N04FI/VNV14N04

”OMNIFET”:

3

1

D2PAK
TO-263

2

1

ISOWATT220

the chip in harsh enviroments.
Faultfeedback can be detected by monitoringthe

voltageat the input pin.

3

SOT82-FM

10

1

PowerSO-10

(∗) PowerSO-10 PinConfiguration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB

June 1998

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VNB14N04-VNK14N04FM-VNP14N04FI-VNV14N04

ABSOLUTEMAXIMUMRATING

Symbol Parameter Value Unit

V

V

Drain-source Voltage (Vin= 0 ) Internally Clamped V

DS

V

Input Voltage 18 V

in

I

Drain Current Inte r nally Limited A

D

I

Reverse DC Output Current -14 A

R

Elect r os t at ic Discha rge (C= 100 pF,

esd

R=1. 5 KΩ)

P

T

Tot al Dis sipa t ion at Tc=25oC509.531W

tot

T

Oper at ing Junction Tem perature Inte r nally Limited

j

T

Case Operating Temperature Internally Limited

c

Sto rage Tem perat ure -55 to 150

stg

THERMAL DATA

R

thj-case

R

thj-amb

Ther mal Resistan ce
Junct ion-case Max 4 2.5 13 2.5

Ther mal Resistan ce
Junct ion-ambient Max 62.5 50 100 62.5

PowerSO -10

D2PAK

ISOWATT220 Po werSO-10 SOT82-FM D 2PAK

SOT-82FM ISOWATT220

2000 V

o

C/W

o

C/W

o

C

o

C

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

OFF

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

V

CLAMP

Drain-source Clamp

ID= 200 mA Vin= 0 36 42 48 V

Volt age

V

CLTH

Drain-source Clamp

ID=2mA Vin=0 35 V

Thr eshold Vol ta ge

V

INCL

Input-Source Reverse

Iin=-1mA -1 -0.3 V

Clamp Voltage

I

DSS

I

ISS

Zer o I npu t V olt age
Drain Current (V

in

Supply Current from

V

=13V Vin=0

=0)

DS

=25V Vin=0

V

DS

VDS=0V Vin= 10 V 250 500 µA

50

200

Input Pin

ON (∗)

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

V

R

DS(on)

IN(th)

Input Thres hold
Volt age

St at ic Drain-sour ce On
Resistance

VDS=VinID+Iin=1mA 0.8 3 V

Vin=10V ID=7A

=5V ID=7A

V

in

0.07

0.1

µA
µA

Ω
Ω

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VNB14N04-VNK14N04FM-VNP14N04FI-VNV14N04

ELECTRICAL CHARACTERISTICS (continued)

DYNAMIC

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on ductance

C

Out put Capacit anc e VDS=13V f=1MHz Vin= 0 400 5 00 pF

oss

SWITCHING(**)

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

t

d(on)

t

d(off)

t

d(on)

t

d(off)

(di/dt)

Q

Turn-on Delay Time

t

Rise Time

r

Turn-off Delay T ime

t

Fall T ime

f

Turn-on Delay Time

t

Rise Time

r

Turn-off Delay T ime

t

Fall T ime

f

Tur n-on Current Slope VDD=15V ID=7A

on

Total Input Charge VDD=12V ID=7A Vin= 10 V 30 nC

i

VDS=13V ID=7A 8 10 S

VDD=15V Id=7A

=10V R

V

gen

gen

=10Ω

(see figure 3)

VDD=15V Id=7A

=10V R

V

gen

= 1000 Ω

gen

(see figure 3)

60
160
250
100

300

1.5

5.5

1.8

120
300
400
200

500

2.2

7.5

2.5

120 A / µ s

=10V R

V

in

gen

=10Ω

ns
ns
ns
ns

ns

µs
µs
µs

SOURCE DRAIN DIODE

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

V

(∗)ForwardOnVoltage ISD=7A Vin=0 1.6 V

SD

t

rr

Reverse Re covery

(∗∗)

Time
Reverse Re covery

(∗∗)

Q

rr

I

= 7 A di/dt = 100 A/µs

SD

=30V Tj=25oC

V

DD

(see test cir cuit, figure 5)

110

0.34

Charge

(∗∗)

I

RRM

Reverse Re covery

6.1

Current

PROTECTION

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

t

dlim

T

jsh

I

lim

Drain Current Limit Vin=10V VDS=13V

=5V VDS=13V

V

in

(∗∗) St ep Response

Current Lim it

Vin=10V

=5V

V

in

(∗∗) Overtemperatu re

Shut dow n

(∗∗) Overtemperatu re Reset 135

T

jrs

I

(∗∗) Fault Sink Current Vin=10V VDS=13V

gf

E

(∗∗) S i ngle Pulse

as

Avalanche Energy

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(∗∗) Parameters guaranteed by design/characterization

=5V VDS=13V

V

in

starting Tj=25oCVDD=20V

=10V R

V

in

=1KΩ L=10mH

gen

10
10

14

14

30

80

20
20

60

150

150

50

20

0.65 J

ns

µC

A

A
A

µs
µs

o

C

o

C

mA
mA

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VNB14N04-VNK14N04FM-VNP14N04FI-VNV14N04

PROTECTION FEATURES

During normal operation, the Input pin is
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC to 50 KHz. The only difference
from the user’s standpoint is that a small DC
current (I

) flows into the Input pin in order to

iss

supplythe internalcircuitry.
The device integrates:

- OVERVOLTAGE CLAMP PROTECTION:

internally set at 42V, along with the rugged
avalanche characteristics of the Power
MOSFET stage give this device unrivalled
ruggedness and energy handling capability.
This feature is mainly important when driving
inductiveloads.

- LINEAR CURRENT LIMITER CIRCUIT: limits

the drain current Id to Ilim whatever the Input
pin voltage. When the current limiter is active,
the device operates in the linear region, so
power dissipation may exceed the capabilityof
the heatsink. Both case and junction
temperatures increase, and if this phase lasts
long enough, junction temperature may reach
the overtemperaturethreshold T

jsh

.

- OVERTEMPERATURE AND SHORT CIRCUIT

PROTECTION: these are based on sensing
the chip temperatureand are not dependent on
the input voltage. The location of the sensing
element on the chip in the power stage area
ensures fast, accurate detection of the junction
temperature. Overtemperaturecutout occurs at
minimum 150
restarted when the chip temperature falls
below135

o

C. The device is automatically

o

C.

- STATUS FEEDBACK: In the case of an

overtemperature fault condition, a Status
Feedback is provided through the Input pin.
The internal protection circuit disconnects the
input from the gate and connects it instead to
ground via an equivalent resistance of 100 Ω.
The failure can be detected by monitoring the
voltage at the Input pin, which will be close to
ground potential.

Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit (with a small increase in R

DS(on)

).

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VNB14N04-VNK14N04FM-VNP14N04FI-VNV14N04

Thermal ImpedanceFor ISOWATT220

Derating Curve

ThermalImpedanceFor D2PAK / PowerSO-10

OutputCharacteristics

Transconductance

StaticDrain-SourceOnResistancevs Input
Voltage

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