SGS Thomson Microelectronics VNS14NV04, VND14NV04, VND14NV04-1, VNP14NV04, VNB14NV04 Datasheet

®

VNB14NV04 / VND14NV04

3

VND14NV0 4-1 / VNP14N V0 4 / VNS14N V0 4

/

“OMNIFE T II” :

FULLY AUTOPROTECTED POWER MOSFET

TYPE R

DS(on)

I

lim

V

clamp

VNB14NV04 VND14NV04 VND14NV04-1

35 mΩ 12 A 40 V VNP14NV04 VNS14NV04

■ LINEAR CURRENT LIMITATION

■ THERM AL SHUT DOWN

■ SHORT CIRCUIT PROTECTION

■ INTEGRATED CLAMP

■ LOW CURRENT DRAWN FROM INPUT PIN

■ DIAGNOSTIC FEEDBACK THROUGH INPUT

■ ESD PROTECTION

■ DIRECT ACCESS TO THE GATE OF THE

POWER MOSFET (ANALOG DRIVING)

■ COMPATIBLE WI TH STANDARD POWER

MOSFET

DESCRIPTION

The VNB14NV04, VND14NV04, VND14NV04-1, VNP14NV04, VNS14NV04, are monolithic devices de signed in ST Microelect ronics VIPo wer M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 50KHz

BLO C K DIAGRA M

3

1

SO-8TO-252 (DPAK)

3

2

1

TO-220 TO-251 (IPAK)

2

1

D2PAK

3

1

ORDER CODES

PACKAGE TUBE T&R

2

PAK VNB14NV04 VNB14NV0413TR

D TO-252 (DPAK) VND14NV04 VND14NV0413TR TO-251 (IPAK) VND14NV04-1 TO-220 VNP14NV04

SO-8 VNS14NV04

-

applications. Built in thermal shutdown, linear current limitation |and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.

DRAIN

2

Overvoltage

Clamp

INPUT

1

Gate

Control

Over

Temperature

Linear

Current

Limiter

3

SOURCE

July 2003 1/29

1

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

ABSOLUTE MAXIMUM RATI NG

Symbol Parameter

Drain-source Voltage (VIN=0V) Internally Clamped V

DS

Input Voltage Internally Clamped V

V

IN

Input Current +/-20 mA

I

IN

Minimum Input Series Impedance 10 Ω Drain Current Internally Limited A

I

D

Reverse DC Output Current -15 A

I

R

Electros tatic Discharge (R=1.5KΩ, C=100p F) 4000 V

ESD1

Electros tatic Discharge on output pin only

ESD2

(R=330 Ω, C=150pF) Total Dissipation at Tc=25°C 4.6 74 74 74 74 W

P

tot

Maximum Swi tching Energy (L=0.4 m H;

MAX

RL=0Ω; V Operating Junction Tem perature Internally limited °C

T

j

Case Oper ating Tempe rature Internally limited °C

T

c

Storage Temperature -55 to 150 °C

stg

=13.5V; T

bat

=150ºC; IL=18A)

jstart

R

V V

E

V

IN MIN

T

CONNECTION DIAGRAM (TOP VIEW)

SO-8 DPAK TO-220 IPAK D

93 93 mJ

SO-8 Package (*)

Value

16500 V

2

PAK

Unit

SOURCE

SOURCE SOURCE INPUT

(*) For the pins configuration related to DPAK, D2PAK, IPAK, TO-220 see outlines at page 1.

1

4

CURRENT AND VOLTAGE CONVENTIONS

I

IN

R

IN

INPUT

SOURCE

V

IN

8

5

DRAIN

DRAIN DRAIN DRAIN DRAIN

I

D

V

DS

2/29

1

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

THERMAL DATA

Symbol Parameter

R

thj-case

R

thj-lead

R

thj-amb

(*) When mounted on a standar d s ingle-sided FR4 board wit h 0.5cm

Horizontal mounting and no artificial air flow.

Thermal R esistance Junction- case MAX 1.7 1.7 1 .7 1.7 °C/W

Thermal Resistance Junction-lead MAX 27 °C/W Thermal R esistance Junction- am bient MAX 90 (*) 65 (*) 62 102 52 (*) ° C/W

SO-8 DPAK TO-220 IPAK D

2

of Cu (at least 35 µm thick) connected to all DRAIN pins.

ELECTRICAL CHARACTERISTICS (-40°C < Tj < 150°C, unless otherwise specified) OFF

Symbol Parameter Test Conditi ons Min Typ Max Unit

V

CLAMP

V

CLTH

V

INTH

I

V

INCL

I

DSS

ISS

Drain-source Clamp Voltage Drain-source Clamp

Threshold Voltage Input Thre shold Volta ge VDS=VIN; ID=1mA 0.5 2.5 V Supply Current from Input

Pin Input-Source Clamp Voltage

Zero Input Voltage Drai n Current (VIN=0V)

V

=0V; ID=7A 40 45 55 V

IN

=0V; ID=2mA 36 V

V

IN

VDS=0V; VIN=5V 100 150 µA IIN=1mA

I

=-1mA

IN

V

=13V; VIN=0V; Tj=25°C

DS

V

=25V; VIN=0V

DS

Value

-1.0

2

PAK

6

6.8 8

-0.3 30 75

Unit

V

µA

ON

Symbol Parameter Test Conditi ons Min Typ Max Unit

V

R

DS(on)

Static Drain-source On Resistance

=5V; ID=7A; Tj=25°C

IN

V

=5V; ID=7A

IN

35 70

mΩ

3/29

1

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified)

DYNAMIC

Symbol Parameter Test Condi tions Min Ty p Max Unit

gfs (*)

C

OSS

SWITCHING

Symbol P arameter Test Co nditions Min Typ Max Unit

t

d(on)

t

d(off)

t

d(on)

t

d(off)

t

(di/dt)

Q

Forward Transconductance

VDD=13V; ID=7A 18 S

Output Ca pacitance VDS=13V; f=1MHz; VIN=0V 400 pF

Turn-on Delay Time Rise Time 350 1000 ns

r

Turn-off Delay Time 450 1350 ns Fall Time 150 500 ns

f

Turn-on Delay Time Rise Time 9.7 30.0 µs

r

Turn-off Delay Time 9 25.0 µs Fall Time 10.2 30.0 µs

f

Turn-on Current Slope

on

Total Input Charge

i

=15V; ID=7A

V

DD

V

=5V; R

gen

gen=RIN MIN

(see figure 1)

=15V; ID=7A

V

DD

V

gen

=5V; R

gen

=2.2K Ω

(see figure 1)

=15V; ID=7A

V

DD

V

=5V; R

gen

V

DD

gen=RIN MIN

=12V; ID =7A; VIN=5V; I

(see figure 5)

=10Ω

=2.13m A

gen

80 250 ns

1.5 4.5 µs

16 A/µs

36.8 nC

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min Typ Max Unit

(*) For ward On Voltag e ISD =7A; VIN=0V 0.8 V

V

SD

Q

I

RRM

t

Reverse Recovery Time ISD=7A; di/dt=4 0A/µs

rr

Reverse Recovery Charge 0.8 µC

rr

Reverse Recovery Current 5 A

V

=30V; L= 20 0 µ H

DD

(see test circuit, figure 2)

300 ns

PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified)

Symbol Parameter Test Conditions Min Typ Max Unit

I

lim

t

dlim

T

jsh

T

I

gf

E

(*) Pulsed: Pu ls e duration = 300µs, dut y c y c le 1.5%

Drain Current Limit VIN=5V; VDS=13V 12 18 24 A

=5V; VDS=13V

Step Response Current Limit

Overtemperature Shutdown

Overtemperature Reset 135 °C

jrs

Fault Sink Current VIN=5V; VDS=13V; Tj=T Sing l e Pu lse

as

Avala nche Energy

V

IN

starti ng T V

IN

= 5V; R

=25°C; V

j

gen=RIN MIN

(see figures 3 & 4)

jsh

=24V

DD

=10Ω; L=24mH

45 µs

150 175 200 °C

10 15 20 mA

400 mJ

4/29

2

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

PROTECTION FEATURES

During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path.

The device then behaves like a standard power MOSFET and can be used as a switch from DC up

to 50KHz. The only difference from the user’s standpoint is that a small DC current I 100µA) flows into the INPUT pin in order to supply

ISS

(typ.

the internal circuitry. The de vice integrates:

- OVERVOLTAGE CLAMP PROTECTION: internally set at 45V, along with the rugged

avalanche characteristics o f the Power MOSFET stage giv e this device unrivall ed ruggedne ss and energy handl ing capability. This feat ure is mainly important when driving inductive loads.

- LINEAR CURRENT LIMITER CIRCUIT: limits the drain current ID to I

INPUT pin voltages. When the current limiter is

whatever the

lim

active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold T

jsh

.

- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION:

these are based on sensing the chip t emperatur e and are not dependen t on the input voltage. The location o f t he s ensing el emen t on the c h ip i n t he power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs in the range 150 to 190 °C, a typical value being 170 °C. The device is auto matically restarted when the chip temp eratu re fall s of about 15°C below shut-down temperature.

- STATUS FEEDBACK: in the case of an overtem perature fault cond ition

(Tj > T current Igf through the INPUT pin in order to

), the device tries to sink a diagnostic

jsh

indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive imped ance is high enough so that the INPUT p in dri ver is no t abl e to su pply the current Igf, the INPUT pin will fall to 0V. This

will not however affect the device operation: no requirement is put on the current capability of the INPUT pin driver except to be able to supply the normal operation drive current I

ISS

Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit.

.

5/29

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

Figure 1: Switching Time Test Circuit for Resistive L oad

V

D

R

gen

V

gen

I

D

90%

t

r

t

V

gen

d(on)

10%

Figure 2: Test Circuit for Diode Recovery Times

A

D

I

OMNIFET

S

25 Ω

B

R

FAST DIODE

gen

t

d(off)

I

OMNIFET

t

f

t

A

L=100uH

B

D

V

DD

6/29

V

gen

S

8.5 Ω

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

Figure 3: Unclamped Inductive Load Test Circuits

R

V

IN

P

GEN

W

Figure 5: Input Charge Test Circuit

IN

V

GEN

Figure 4: Unclamped Inductive Waveforms

ND8003

7/29

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

Source-Drain Diode Forward Characteristics

Vsd (mV)

1000

950

900

850

800

750

700

650

Vin=0V

0 2 4 6 8 10 12 14 16 18

Id (A)

Derating Curve

Static Drain Source On Resistance

Rds(on) (mohms)

180

160

140

120

100

80

60

40

20

Vin=2.5V

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

Tj=-40ºC

Tj=25ºC

Tj=150ºC

Id(A)

Static Drain-Source On resistance Vs. Input Voltage

Rds(on) (mohms)

80

70

Tj=150ºC

60

50

Tj=25ºC

40

Id=12A Id=1A

Static Drain-Source On resistance Vs. Input Voltage

Rds(on) (mohms)

80

70

60

50

40

30

20

10

33.544.555.566.5

Vin(V)

8/29

Id=7A

Tj=150ºC

Tj=25ºC

Tj= - 40ºC

30

Tj=-40ºC

20

10

3 3.5 4 4.5 5 5.5 6 6.5

Vin(V)

Transconductance

Gfs (S)

24 22

Vds=13V

20 18 16 14 12 10

8 6 4 2 0

012345678910111213

Tj=-40ºC

Tj=150ºC

Id(A)

Id=12A Id=1A

Tj=25ºC

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

Static Drain-Source On Resistance Vs. Id

Rds(on) (mohms)

70

60

Vin=5V

50

40

30

20

10

0

012345678910111213

Tj=150ºC

Tj=25ºC

Tj=-40ºC

Id(A)

Turn On Current Slope

di/dt(A/us)

20

17.5

15

12.5

10

7.5

5

2.5

0

0 250 500 750 1000 1250 1500 1750 2000 2250

Rg(ohm)

Vin=5V

Vdd=15V

Id=7A

Transfer Characteristics

Idon (A)

18

16

14

12

10

8

6

4

2

0

2

Vds=13.5V

Tj=150ºC

2.25

2.5

2.7533.25

3.5

3.7544.25

Vin (V)

Turn On Current Slope

di/dt(A/us)

6

5.5 5

4.5 4

3.5 3

2.5 2

1.5

1

0.5 0

0 250 500 750 1000 1250 1500 1750 2000 2250

Rg(ohm)

4.5

4.7555.25

Vin=3.5V Vdd=15V

Id=7A

Tj=25ºC

Tj=-40ºC

5.5

Input Voltage Vs. Input Charge

Vin (V)

8

7

6

5

4

3

2

1

0

Vds=12V

Id=7A

0 5 10 15 20 25 30 35 40 45

Qg (nC)

Turn off drain source voltage slope

dv/dt(V/us)

300 275 250 225 200 175 150 125 100

75 50 25

0

500

250

750

1000

1250

Rg(ohm)

1500

1750

Vin=5V

Vdd=15V

Id=7A

2000

2250

2500

9/29