SGS Thomson Microelectronics VNQ830M Datasheet

®

VNQ830M

QUAD CHANNEL HIGH SIDE DRIVER

TYPE R

DS(on)

I

OUT

V

CC

VNQ830M 60 mΩ (*) 6 A (*) 36 V

(*) Per each channel

■ CMOS COMPATIBLE INPUTS

■ OPEN DRAIN STATUS OUTPUTS

■ ON STATE OPEN LOAD DETECTION

■ OFF STATE OPEN LOAD DETECTION

■ SHORTED LOAD PROTECTION

■ UNDERVOLTAGE AND OVERVOLTAGE

SHUTDOWN

■ LOSS OF GROUND P ROTECTION

■ VERY LOW STAND- BY CURRENT

■ REVERSE BA TTERY PROTECTION ( **)

SO-28

against low energy spikes (see ISO7637 transient

SO-28 (DOUBLE ISLAND)

ORDER CODES

PACKAGE TUBE T&R

VNQ830M VNQ830M13TR

compatibility table). Active current limitation

DESCRIPTION

The VNQ830M is a quad HSD formed by
assembling two VND830M chips in the same SO­28 package. The VND830M is a monolithic device
made by usin g| STM icroelect ronics V IPower M 0­3 Technology. The VNQ830M is intended for
driving any type of multiple loads with one side
connected to ground.
Active VCC pin vol ta ge cl amp p rotects the devi ce

combined with the rmal shutdown and automatic
restart protects the device against overload.
The device detects open load condition both in on
and off state. The openl o ad thr eshol d is ai m ed at
detecting the 5W/12V standard bulb as an
openload fault in th e on state. Output shorted to
VCC is detected in the off state. Device
automatically turns off in case of ground pin
disconnection.

ABSOLUTE MAXIMUM RATI NG

Symbol Parameter Value Unit

tot

DC Supply Vol tage 41 V
Reverse DC Supply Voltage - 0.3 V

CC

DC Reverse Ground Pin Curr ent - 200 mA
DC Output Current Internally Limited A
Reverse DC Output Current - 6 A
DC Input Current +/- 10 mA
DC Status Cur rent +/- 10 mA
Electros tatic Disc harge (Huma n Body Model: R=1.5KΩ; C=100pF)

- INPU T

- STATUS

- OUTPU T

- V

CC

Powe r Dissipation T

=25°C 6.25 W

pins

Maximum Swi tching Energy
(L=1mH; R
Junction Operating Temperature Internally Limited °C

j

=0Ω; V

L

=13.5V; T

bat

=150ºC; IL=10.5A)

jstart

4000
4000
5000
5000

77 mJ

Storage Temperature - 55 to 150 °C

V

- V

- I
I

OUT

- I

I

STAT

V

P

E

T

CC

GND

OUT

I

IN

ESD

MAX

T

stg

V
V
V
V

(**) See appl ic ation schema tic at page 9

Janua ry 20 03 1/20

VNQ830M

BLOCK DIAGRAM

V

cc

CLAMP

OVERVOLTAGE

UNDERVOLTAGE

V

CC1,2

GND1,2

INPUT1

STATUS1

INPUT2

STATUS2

GND3,4

INPUT3

STATUS3

INPUT4

STATUS4

OVERTEMP. 1

OVERTEMP. 2

V

cc

CLAMP

OVERTEMP. 3

LOGIC

LOGIC

CLAMP 1

DRIVER 1

CURRENT LIMITER 1

OPENLOAD ON 1

OPENLOAD OFF 1

OVERVOLTAGE

UNDERVOLTAGE

CLAMP 3

DRIVER 3

CURRENT LIMITER 3

OPENLOAD ON 3

OPENLOAD OFF 3

CLAMP 2

DRIVER 2

CURRENT LIMITER 2

OPENLOAD ON 2

OPENLOAD OFF 2

CLAMP 4

DRIVER 4

CURRENT LIMITER 4

OPENLOAD ON 4

OUTPUT1

OUTPUT2

V

CC3,4

OUTPUT3

OUTPUT4

2/20

OVERTEMP. 4

OPENLOAD OFF 4

CURRENT AND VOLTAGE CONVENTIO NS

VNQ830M

I

S1,2

V

CC1,2

I

IN1

STAT3

V

IN4

V

STAT4

I

STAT1

I

IN2

I

STAT2

I

IN3

I

STAT3

I

IN4

I

STAT4

V

IN1

V

STAT1

V

IN2

V

STAT2

V

IN3

V

CONNECTION DIAGRAM ( TOP VIEW)

VCC1,2
GND 1,2
INPUT1
STATUS1
STATUS2

INPUT2
V

1,2

CC

V

3,4

CC

GND 3,4
INPUT3

STATUS3
STATUS4
INPUT4

3,4

V

CC

V

CC1,2

INPUT1
STATUS1

INPUT2
STATUS2

INPUT3

STATUS3

INPUT4
STATUS4

GND

1,2

1

14 15

I

GND1,2

V

CC3,4

OUTPUT1

OUTPUT2

OUTPUT3

OUTPUT4

GND

28

3,4

I

GND3,4

I

OUT1

I

OUT2

I

OUT3

V

I

OUT4

V

OUT4

V

1,2

CC

OUTPUT1
OUTPUT1

OUTPUT1
OUTPUT2

OUTPUT2

OUTPUT2
OUTPUT3
OUTPUT3

OUTPUT3

OUTPUT4
OUTPUT4

OUTPUT4

V

3,4

CC

OUT3

I

V

S3,4

OUT2

V

OUT1

V

CC3,4

3/20

VNQ830M

THERMAL DATA (Per island)

Symbol Parameter Value Unit

R

thj-lead

R

thj-amb

R

thj-amb

(*) When mounted on a standard single-sid ed FR-4 board with 0.5cm2 of Cu (at leas t 35µ m thick) connected to all VCC pins.

Horizontal mounting and no artificial air flow.

ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C< Tj <150°C, unless otherwise specified)

POWER OUTPUT (Per each channel)

Symbol Param eter Test Condit ions Min Typ Max Unit

V

CC

V

USD

V

OV

R

I

S

I

L(off1)

I

L(off2)

I

L(off3)

I

L(off4)

Thermal R esistance Junction-lead per chip 20 °C/W

Thermal Resistance Junction- am bient 60 (*) °C/W
Thermal Resistance Junction- am bient (two chips ON) 46 (*) °C/W

(**) Operating Supply Voltage 5.5 13 36 V

(**) Undervoltage Shut-down 3 4 5.5 V

(**) Overvoltage Shut-down 36 V

I

On State Resistance

on

(**) Supply Current

Off State Output Current VIN=V
Off State Output Current VIN=0V; V
Off State Output Current VIN=V
Off State Output Current VIN=V

=2A; Tj=25°C

OUT

I

=2A; VCC>8V

OUT

Off State; V
Off State; V
On State; V

OUT

OUT
OUT

=13V; VIN=V

CC

=13V; VIN=V

CC

=13V; VIN=5V; I

CC

=0V

OUT

=0V; Tj =25°C

OUT

=0A

OUT

=0V 0 50 µA

=3.5V -75 0 µA

OUT

=0V; VCC=13V; Tj =125°C 5 µA
=0V; VCC=13V; Tj =25°C 3 µA

12

12

5

60

120mΩmΩ

40

25

7

µA

µA

mA

SWITCHING (Per each Channel) (VCC =13V)

Symbol Param eter T est Conditions Min Typ Max Unit

t

d(on)

t

d(off)

Turn-on Delay Time RL=6.5Ω from VIN rising edge to V
Turn-off Dela y Ti me RL=6.5Ω fro m VIN fallin g edge to V

=1.3V 30 µs

OUT

=11.7V 30 µs

OUT

See

/dt

dV

OUT

Turn-on Voltage Sl ope RL=6.5Ω from V

(on)

=1.3V to V

OUT

OUT

=10.4V

relative

diagram

See

/dt

dV

OUT

Turn-off Voltage Slope RL=6.5Ω from V

(off)

=11.7V to V

OUT

OUT

=1.3V

relative

diagram

LOGIC INPUT (Per each channel)

Symbol Parameter Test Conditions Min Typ Max Unit

V

I

IL

V

I

IH

V

I(hyst)

V

ICL

(**) Per island

4/20

Input Low Level 1.25 V

IL

Low Level Input Current VIN=1.25V 1 µA
Input High Level 3.25 V

IH

High Level Input Current VIN=3.25V 10 µA
Input Hyst eresis Voltage 0.5 V

I

Input Clamp Voltage

IN

I

IN

=1mA
=-1mA

66.8

-0.7

8V

V/µs

V/µs

V

1

VNQ830M

ELECTRICAL CHARACTERISTICS (continued)

VCC - OUTPUT DIODE

Symbol Parameter Test Conditions Min Typ Max Unit

V

F

Forward on Voltage -I

STATUS PIN (Per each channel)

Symbol Parameter Test Conditions Min Typ Max Unit

V

STAT

I

LSTAT

C

STAT

V

SCL

Status Low Output Voltage I
Status Leakage Current Normal Operation; V
Status Pin Input

Capacitance
Status Clamp Voltage

PROTECTIONS (Per each channel)

Symbol Parameter Test Conditions Min Typ Max Unit

T

TSD

T

T

hyst

t

SDL

I

V

demag

lim

Shut-down Temperature 150 175 200 °C
Reset Temp erature 135 °C

R

Ther ma l Hy steresi s 7 15 °C
Status Delay in Overload

Conditions
Current limitation
Turn-off Output Clamp

Voltage

=2A; Tj=150°C 0.6 V

OUT

=1.6mA 0.5 V

STAT

Normal Operation; V

=1mA

I

STAT

I

=-1mA

STAT

T

j>TTSD

=5V 10 µA

STAT

=5V 100 pF

STAT

66.8

-0.7

610.51515A

5.5V<V
I

OUT

<36V

CC

=2A; L= 6m H VCC-41 VCC-48 VCC-55 V

8V

20 µs

V

A

OPENLOAD DETECTION (per each channel)

Symbol Parameter Test Conditions Min Typ Max Uni t

I

OL

t

DOL(on)

V

t

DOL(off)

OPEN LOAD STATUS TIMING (with external pull-up)

V

INn

V

STATn

Openload ON State
Detectio n Threshold
Openload ON State
Detection Delay

=5V 0.6 0.9 1.2 A

V

IN

=0A 200 µs

I

OUT

Openload OFF State
Voltage Detection

OL

Threshold
Openload Detection Delay

at Turn Off

V

OUT

t

DOL(off)

VIN=0V 1.5 2.5 3.5 V

OL

I

OUT

t

DOL(on)

> V

< I

OL

V

INn

V

STATn

1000 µs

OVER TE M P STAT US TIMIN G

Tj > T

TSD

t

SDL

t

SDL

5/20

2

VNQ830M

Switching time Waveforms

V

OUTn

dV

/dt

OUT

(on)

V

INn

t

d(on)

80%

10%

t

d(off)

90%

dV

OUT

/dt

(off)

t

t

TRUTH TABLE

CONDITIONS INPUT OUTPUT STATUS

Normal Operation

Current Limitation

Overtemperature

Undervoltage

Overvoltage

Output Voltage > V

Output Current < I

OL

OL

L

H

L
H
H

L
H

L
H

L
H

L
H

L
H

L
H

L
X
X

(T

(T

< T

j

> T

j

L
L

L
L

L
L

H
H

L
H

TSD

TSD

H
H

H
) H
) L

H

L

X

X

H

H

L

H

H

L

6/20