SGS Thomson Microelectronics VNQ660SP Datasheet
®
VNQ660SP
QUAD CH ANNEL HIG H SIDE SOLI D STATE REL A Y
TYPE R
DS(on)
I
OUT
V
CC
VNQ660SP 50mΩ (*) 6A 36 V
(*) Per each channel
■ OUTPUT CURRENT PER CHANNEL: 6A
■ CMOS COMPATIBLE INPUTS
■ OPEN LOAD DETECTION (OFF STATE)
■ UNDERVOLTAGE & OV ERVOLTAGE
SHUT- DOWN
n
■ OVERVOLTAGE CLAMP
■ THERMAL SHUT-DOWN
■ CURRENT LIMITATION
■ VERY LOW STAND-BY POWER DISSIPATION
■ PROTECTION AGAINST:
LOSS OF GROUND & LOSS OF VCC
n
■ REVERSE BATTERY PROTECTION (**)
PACKAGE TUBE T&R
PowerSO-10
Technology, intended for driving resistive or
10
1
PowerSO-10
™
ORDER CODES
VNQ660SP VNQ660SP13TR
™
inductive loads with one side connected to ground.
This device has four i nd epen dent cha nnel s. B uil t-
DESCRIPTION
The VNQ660S P is a monolithic devic e made by
using| STMicroelectronics VIPower M0-3
in thermal shut down and output current limitation
protect the chip from over temper ature and short
circuit.
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
V
-V
I
OUT
I
I
I
STAT
I
GND
V
ESD
P
T
T
E
(**) See app lication schematic at page 8
Supply voltage (co ntinuous) 41 V
CC
Reverse supply volt age (contin uous) -0.3 V
CC
Output current (co ntinuous), per each channel Internally limit ed A
Reverse output curr ent (continuous), per each channel -15 A
R
Input current +/- 10 mA
IN
Status current +/- 10 mA
Ground current at TC<25°C (continuous) -200 mA
Electro static Discharge (Human Body Model: R= 1.5KΩ; C=100pF)
- INPUT
- STATUS
- OUTPUT
- V
CC
Power dissipation at TC=25°C113.6W
tot
Junction operating temperature -40 to 150 °C
j
Storage temperature -65 to 150 °C
stg
Non repetitive clamping energy at TC=25°C150mJ
C
4000
4000
5000
5000
V
V
V
V
July 2003 1/16
VNQ660SP
BLOCK DIAGRAM
OVERVOLTAGE
UNDERVOLT AGE
V
CC
INPUT 1
INPUT 2
INPUT 3
LOGIC
INPUT 4
STATUS
STATUS
OVERTEMP. 1
OVERTEMP. 2
OVERTEMP. 3
OVERTEMP. 4
CURRENT AND VOLTAGE CONVENTIONS
DRIVER 1
DRIVER 2
DRIVER 3
DRIVER 4
OPEN LOAD
OFF-STATE
GND
DEMAG 1
I
LIM1
DEMAG 2
I
LIM2
DEMA G 3
I
LIM3
DEMAG 4
I
LIM4
OUTPUT 1
OUTPUT 2
OUTPUT 3
OUTPUT 4
2/16
I
S
I
IN1
INPUT 1
I
V
IN1
IN2
INPUT 2
V
IN2
I
IN3
INPUT 3
I
V
IN4
IN3
INPUT 4
V
IN4
V
STATUS
STAT
V
I
STAT
CC
OUTPUT 1
OUTPUT 2
OUTPUT 3
OUTPUT 4
GND
I
GND
I
OUT1
I
OUT2
I
OUT3
I
OUT4
V
OUT4
V
V
OUT3
V
OUT2
OUT1
V
CC
CONNECTION DIAGRAM (TOP VIEW)
VNQ660SP
STATUS
INPUT 4
INPUT 3
INPUT 2
INPUT 1
10
6
7
8
9
5
4
3
2
1
GND
OUTPUT 4
OUTPUT 3
OUTPUT 2
OUTPUT 1
11
V
CC
THERMAL DATA
Symbol Parameter Value Unit
R
thj-case
R
thj-amb
(*) When mounted on a standard single-sided FR-4 board with 0.5cm² of Cu (at least 35 µm thick). Horizontal mounting and no artificial air
flow.
Thermal resistance junction-case (MAX) (all channel s on) 1.1 °C/W
Thermal resistance junction-am bient (MAX) 51.1 (*) °C/W
ELECTRICAL CHARACTERISTICS (VCC=6V up to 24V; -40°C<Tj<150°C unless otherwise specified)
POWER (per each channel)
Symbol Parameter Tes t Conditions Min Typ Max Unit
(**) Operating su pp l y vo lt a ge 6 13 36 V
V
CC
(**) Undervoltage shutdown 3.5 4.6 6 V
V
USD
(**) Under voltage hyst eresis 0.2 1 V
V
UVhyst
(**) Overv oltage shut down 36 V
V
OV
(**) Overvoltage hyst eresis 0.25 V
V
OVhyst
(**) Supply current
I
S
R
DS(on)
I
L(off1)
I
L(off2)
I
L(off3)
I
L(off4)
On stat e resistance
Off state output current VIN=V
Off Stat e O utput Current VIN=0V; V
Off Stat e O utput Current VIN=V
Off Stat e O utput Current VIN=V
Off state; Input=0V; V
Off state; Input=0V; V
T
=25°C
j
CC
CC
=13.5V
=13.5V
On st ate In pu t=3.25 V; 9 V<V
=1A; Tj=25°C; 9V<VCC<18V
I
OUT
I
=1A, Tj=150°C; 9V<VCC<18V
OUT
I
=1A; VCC=6V
OUT
=0V 0 50 µA
OUT
=3.5V -75 0 µA
OUT
=0V; VCC=13V; Tj =125°C 5 µA
OUT
=0V; VCC=13V; Tj =25°C 3 µA
OUT
CC
<18V
12
12
40
85
40
25
6
12
50
100
130
µA
µA
mA
mΩ
mΩ
mΩ
(**) Per device.
3/16
VNQ660SP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING (VCC=13V)
Symbol Parameter Test Conditions Min Typ Max Unit
t
d(on)
t
d(off)
dV
/dt
OUT
/dt
dV
OUT
PROTECTIONS (per each channel)
Symbol Parameter Test Conditions Min Typ Max Unit
T
TSD
T
R
T
hyst
I
lim
V
demag
V
STAT
I
LSTAT
C
STAT
V
SCL
Turn-on de la y t im e RL=13Ω channels 1, 2,3,4 40 70 µs
Turn-on de la y t im e RL=13Ω channels 1, 2,3,4 40 140 µs
See
Turn-on voltage slope RL=13Ω channels 1, 2,3,4
(on)
relative
diagram
See
Turn-off voltage slope RL=13Ω channels 1, 2,3,4
(off)
relative
diagram
Shutdown temperatur e 150 17 0 200 °C
Reset temperature 135 °C
Thermal hysteresi s 7 15 25 °C
DC Short ci rcuit current
Turn-off output volt age
clamp
Status lo w output
voltage
9V<V
6V<V
I
I
<36V
CC
<36V
CC
=2A; VIN=0V; L= 6m H VCC-41 VCC-48 VCC-55 V
OUT
=1.6mA 0.5 V
STAT
Status leakage curr ent Normal operation; V
Status pi n input
capacitance
Status clamp voltag e
Normal operation; V
I
=1mA
STAT
I
=-1mA
STAT
=5V 10 µA
STAT
=5V 25 pF
STAT
6101818A
66.8
-0.7
8V
V/µs
V/µs
A
V
LOGIC INPUT (per each channel)
Symbol Parameter Test Conditions Min Typ Max Unit
Input Low Level Volt age 1.25 V
Input High Level Voltage 3.25 V
Input Hysteresis Voltage 0.5 V
Input high level voltage VIN=3.25V 10 µA
Input Current VIN=1.25V 1 µA
Input Capacitance 40 pF
Input Clam p Voltage IIN=1mA
I
=-1mA
IN
66.8
-0.7
8V
V
V
V
IL
V
IH
HYST
I
IH
I
IL
C
IN
ICL
OPENLOAD DETECTION (off state) per each channel
Symbol Parameter Test Conditions Min Typ Max Unit
t
SDL
V
OL
T
DOL
(*) See Figure 1
Status Delay (*) 20 µs
Openload Voltage
Detec tion Thresh old
Openlo ad Detectio n Delay
at Turn Off
VIN=0V 1.5 2.5 3.5 V
VCC=18V (*) 300 µs
V
4/16
ELECTRICAL TRANS IENT REQUIREMENTS
ISO T/R 7637/1
Test Pulse
1 -25 V -50 V -75 V -100 V 2 ms 10 Ω
2 +25 V +50 V +75 V +100 V 0.2 m s 10 Ω
3a -25 V -50 V -100 V -150 V 0.1 µs 50 Ω
3b +25 V +50 V +75 V +10 0 V 0.1 µs 50 Ω
4 -4 V -5 V -6 V -7 V 100 ms, 0.01
I II III IV Delays and
TEST LEVELS
VNQ660SP
Impedance
Ω
ISO T/R
7637/1
Test Pulse
IIIIIIIV
1CCCC
2CCCC
3a CCCC
3b CCCC
4CCCC
5CEEE
Class Contents
C All funct ions of the de vice are performed as des igned after exposure to disturbance.
E
One or more functions of the device i s not performe d as designed after expo sure and cannot be
returned to proper operation without repla cing the devi ce.
SWITCHING CHARACTERISTICS
V
LOAD
80%
dV
/dt
OUT
(on)
Test Levels Result
90%
dV
OUT
/dt
(off)
10%
t
V
IN
t
d(on) t
r
t
d(off)
t
5/16
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