SGS Thomson Microelectronics VNQ600A-8960 Datasheet

June 20 03 1/18

®

VNQ600A(8960)

QUAD CHAN NEL HIGH SIDE SOLID STATE RELAY

■ DC SHORT CIRCUIT CURRENT: 25A

■ CMOS COMPATIBLE INPUTS

■ PROPORTIONAL LOAD CURRENT SENSE

■ UNDERVOLTAGE & OVERVOLTAGE

n

SHUT-DOWN

■ OVERVOLTAGE CLAMP

■ THERMAL SHUT-DOWN

■ CURRENT LIMITATION

■ VERY LOW STAND-BY POWER DISSIPATION

■ PROTECTION AGAINST:

n

LOSS OF GROUND & LOSS OF VCC

■ REVERSE BATTERY PROTECTION (**)

DESCRIPTION

The VNQ600A(8960) is a quad HSD formed by assembling two VND600 chips in the same SO-28

package. The VND600 is a monolithic device designed in| STMicroelectronics VIPower M0-3 Technology. The VNQ6 00A(8960) is inten ded f or driving any type of multiple loads with one side connected to ground. This device has four independent channels and four analog sense outputs which deliver curr ents proportio nal to the outputs currents. Active current limitation combined with th ermal shut-down an d automatic restart protect the device against overload. Device automatically turns off in case of ground pin disconnection.

TYPE R

DS(on)

(*) I

lim

V

CC

VNQ600A(8960) 30mΩ 25A 36 V

(*) Per each channel at VCC=13V

ABSOLUTE MAXIMUM RATING

(**) See app lication schem atic at page 9.

Symbol Parameter Value Unit

V

CC

Supply voltage ( continuous) 41 V

-V

CC

Reverse supply voltage (continuous) -0.3 V

I

OUT

Output current ( continuo us), for each channel 15 A

I

R

Reverse output current (continu ous), for each channel -15 A

I

IN

Input current +/- 10 mA

V

CSENSE

Current sense maximum voltage

-3

+15

V V

I

GND

Ground current at T

pins

< 25°C (continuous) -200 mA

V

ESD

Electro static Discharge ( Human Body M odel: R=1.5KΩ; C=100pF)

- INPUT

- CURRENT SENSE

- OUTPUT

- V

CC

4000 2000 5000 5000

V V V V

E

MAX

Maxim u m Sw itching En ergy (L=0.11m H ; R

L

=0Ω; V

bat

=13.5V ; T

jstart

=150ºC ; IL=40A)

126 mJ

P

tot

Power dissipation (per island) at T

lead

=25°C 6.25 W

T

j

Junction operat ing temperature Internally Limited °C

T

stg

Storage temperature -55 to 150 °C

SO-28 (DOUBLE ISLAND)

ORDER CODES

PACKAGE TUBE T&R

SO-28 VNQ600A(8960) VNQ600A(8960)TR

2/18

VNQ600A(8960)

BLOCK DIAGRAM

LOGIC

UNDERVOLT AGE

OVERVOLTAGE

OVERTEMP. 1

OVERTEMP. 2

I

LIM2

DEMAG 2

K

I

OUT2

I

LIM1

DEMA G 1

K

I

OUT1

INPUT 1

INPUT 2

GND 1,2

V

CC

1,2

OUTPUT 1

CURRENT SENSE 1

OUTPUT 2

CURRENT SENSE 2

DRIVER 2

DRIVER 1

LOGIC

UNDERVOLTAGE

OVERVOLT AGE

OVERTEMP. 3

OVERTEMP. 4

I

LIM4

DEMAG 4

K

I

OUT4

I

LIM3

DEMAG 3

K

I

OUT3

INPUT 3

INPUT 4

GND 3,4

V

CC

3,4

OUTPUT 3

CURRENT SENSE 3

OUTPUT 4

CURRENT SENSE 4

DRIVER 4

DRIVER 3

3/18

VNQ600A(8960)

CURRENT AND VOLTAGE CONVENTIONS

VCC1,2 GND 1,2 INPUT2 INPUT1 CURRENT

V

CC

1,2

V

CC

3,4 GND 3,4 INPUT4

INPUT3

V

CC

3,4

SENSE 1

V

CC

3,4

OUTPUT 4

OUTPUT 3

OUTPUT 2

OUTPUT 1

V

CC

1,2

OUTPUT 3

OUTPUT 1

CURRENT SENS E 2

CURRENT SE NSE 3 CURRENT SE NSE 4

1

14 15

28

CONNECTION DIAGRAM ( TOP VIEW)

I

S3,4

I

GND1,2

OUTPUT3

V

CC3,4

GND

1,2

INPUT2

I

OUT3

V

CC3,4

V

OUT4

OUTPUT2

I

OUT2

V

OUT3

INPUT1

I

IN1

CUR. SENSE1

I

SENSE1

OUTPUT1

I

OUT1

OUTPUT4

I

OUT4

V

OUT2

V

OUT1

I

IN2

I

SENSE2

I

SENSE3

I

IN4

I

SENSE4

CUR. SENSE2

CUR. SENSE3

CUR. SENSE4

INPUT3

INPUT4

V

SENSE4

V

IN4

V

SENSE3

V

IN3

V

SENSE2

I

IN3

V

IN2

V

SENSE1

V

IN1

I

GND3,4

GND

3,4

I

S1,2

V

CC1,2

V

CC1,2

4/18

VNQ600A(8960)

THERMAL DATA (Per island)

(*) When mounted on a standard si ngle-sided FR-4 board with 0.5c m2 of Cu (at leas t 35µ m thick) connect ed to all VCC pins.

Horizontal mounting and no artificial air flow.

ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C<Tj<150°C; unless otherwise specified) (Per each channel) POWER

SWITCHING (VCC=13V)

PROTECTIONS

(**) Per island

Symbol Parameter Value Unit

R

thj-lead

Ther m al re si s ta nce Junctio n - le ad 20 °C/W

R

thj-amb

Thermal resistan ce Junction-ambient (one chip ON) 60 (*) °C/W

R

thj-amb

Thermal resistan ce Junction-ambient (two chips ON ) 46 (*) °C/W

Symbol Parameter Test Conditions Min Typ Max Unit

V

CC

(**) Operat in g supply vol tage 5.5 13 36 V

V

USD

(**) Unde rvoltage shut-down 3 4 5.5 V

V

OV

(**) Overvoltage shut-down 36 V

R

ON

On state res istance

I

OUT

1,2,3,4=5A; Tj=25°C; VCC=13V

I

OUT

1,2,3,4=5A; Tj=25°C; 8V < V

CC

< 36V

- 40°C < T

j

< 150°C; VCC=13V

30 32 60

mΩ mΩ mΩ

V

clamp

Clamp Volt age ICC=20mA (see note 1) 41 48 55 V

I

S

(**) Supply cu rrent

Off Stat e; V

CC

=13V; VIN=V

OUT

=0V

Off Stat e; V

CC

=13V; VIN=V

OUT

=0V;

T

j

=25°C

On State; V

CC

=13V; VIN=5V; I

OUT

=0A;

R

SENSE

=3.9KΩ

12

40

25

6

µA

mA

I

L(off 1)

Off state output current VIN=V

OUT

=0V 0 50 µA

I

L(off 2)

Off State Output Current VIN=0V; V

OUT

=3.5V -75 0 µ A

I

L(off 3)

Off State Output Current VIN=V

OUT

=0V; VCC=13V; Tj=125°C 5 µA

I

L(off4)

Off State Output Current VIN=V

OUT

=0V; VCC=13V; Tj=25°C 3 µA

Symbol Parameter Test Conditions Min Typ Max Unit

t

D(on)

Turn-on del a y time RL=2.6Ω channels 1,2,3,4 ( see fig. 1) 40 µs

t

D(off)

Turn-off delay time RL=2.6Ω channels 1,2,3,4 ( see fig. 1) 40 µs

(dV

OUT

/dt)onTurn-on voltage slope RL=2.6Ω channels 1,2,3,4 ( see fig. 1) 0.20 V/µs

(dV

OUT

/dt)

off

Turn-off voltage s lope RL=2.6Ω channels 1,2,3,4 ( see fig. 1) 0.20 V/µs

Symbol Parameter Test Conditions Min Typ Max Unit

I

lim

DC Short circuit current

V

CC

=13V

5.5V<V

CC

<36V

25 40 70

70

A A

T

TSD

Thermal shut-down temper ature

150 175 200 °C

T

R

Thermal reset temper ature

135 °C

T

hyst

Thermal hysteresis 7 15 °C

V

demag

Turn-off output voltage clamp

I

OUT

=2A; L= 6m H VCC-41 VCC-48 VCC-55 V

V

ON

Output voltage dr op limitation

I

OUT

=0.5A; Tj= -40°C.. .+150°C 50 mV

1

5/18

VNQ600A(8960)

CURRENT SENSE (9V < V

CC

< 16V) (See Fig. 3)

LOGIC INPUT

Note 1: V

clamp

and VOV are correlated. Typical difference is 5V.

Note 2: current sense signal delay after posi tive input slope.

Note: Sense pin doesn’t have to be left floating.

Symbol Parameter Test Conditions Min Typ Max Unit

K

1

I

OUT/ISENSE

I

OUT1,2

=0.35A ; V

SENSE

=0.5V;

T

j

= -40°C. .. +150°C

3300 4350 6000

dK

1/K1

Current Sense Ratio Drift

I

OUT1

or I

OUT2

=0.5A;

V

SENSE

=0.5V; other channels

open; Tj= -40°C...150°C

-10 +10 %

K

2

I

OUT/ISENSE

I

OUT

=2A; V

SENSE

=2.5V; Tj=-40°C

T

j

= 25°C...+150°C

3900 4150

4850 4850

6000 5800

dK2/K

2

Current Sense Ratio Drift

I

OUT1

or I

OUT2

=5A; V

SENSE

=4V;

other channels open; T

j

=-40°C...150°C

-6 +6 %

K

3

I

OUT/ISENSE

I

OUT

=4A; V

SENSE

=4V; Tj=-40°C

T

j

= 25°C...+150°C

4150 4400

4900 4900

6000 5750

dK3/K

3

Current Sense Ratio Drift

I

OUT1

or I

OUT2

=15A; V

SENSE

=4V;

other channels open; T

j

=-40°C...150°C

-6 +6 %

V

SENSE1,2

Max analog sense output voltage

V

CC

=5.5V; I

OUT1,2

=2A;

R

SENSE

=10KΩ

V

CC

>8V; I

OUT1,2

=4A;

R

SENSE

=10KΩ

2

4

V

SENSEH

Analog sense output voltage in overtemperature condition

VCC=13V; R

SENSE

=3.9K Ω 5V

R

VSENSEH

Analog Sense Output Impeda nce in Overtem peratur e Condition

VCC=13V; Tj>T

TSD

; All channels

open

400 Ω

t

DSENSE

Current sense delay response to 90% I

SENSE

(see note 2) 500 µs

Symbol Parameter Test Conditions Min Typ Max Unit

V

IL

Low level input voltage 1.25 V

V

IH

High level input voltage 3.25 V

V

I(hyst)

Input hysteres is voltag e 0.5 V

I

IL

Low level input current VIN=1.25V 20 65 µA

I

IH

High level input current VIN=3.25V 75 110 µA

V

ICL

Input clamp voltage

I

IN

=1mA

I

IN

= -1mA

66.8

-0.7

8V

V

2

6/18

VNQ600A(8960)

CONDITIONS INPUT OUTPUT SENSE

Normal op eration

L

H

L H

0

Nominal

Overtemperature

L

H

L L

0

V

SENSEH

Undervoltage

L

H

L L

0 0

Overvoltage

L

H

L L

0 0

Short circuit to GND

L H H

L L L

0

(T

j<TTSD

) 0

(T

j>TTSD

) V

SENSEH

Short circuit to V

CC

L H

H H

0

< Nomin a l

Negative output voltage clamp

LL 0

TRUTH TABLE (per channel)