SGS Thomson Microelectronics VNQ600A13TR, VNQ600A Datasheet

®

VNQ600A

QUAD CHAN NEL HIGH SIDE SOLID STATE RELAY

TYPE R

DS(on)

(*) I

lim

V

CC

VNQ600A 35mΩ 25A 36 V

(*) Per each channel

■ DC SHORT CIRCUIT CURRENT: 25A

■ CMOS COMPATIBLE INPUTS

■ PROPORTIONAL LOAD CURRENT SENSE

■ UNDERVOLTAGE & OVERVOLTAGE

SHUT-DOWN

n

■ OVERVOLTAGE CLAMP

■ THERMAL SHUT-DOWN

■ CURRENT LIMITATION

■ VERY LOW STAND-BY POWER DISSIPATION

■ PROTECTION AGAINST:

LOSS OF GROUND & LOSS OF VCC

n

■ REVERSE BATTERY PROTECTION (**)

SO-28 VNQ600A VNQ600A13TR

package. The VND600 is a monolithic device designed in| STMicroelectronics VIPower M0-3 Technology. The VNQ600A is intended for driving any type of multiple loads with one side connected to ground. This device has four independent

SO-28 (DOUBLE ISLAND)

ORDER CODES

PACKAGE TUBE T&R

channels and four analog sense outputs which deliver currents proportional to the outputs

DESCRIPTION

The VNQ600A is a quad HSD formed by assembling two VND600 chips in the same SO-28

currents. Active current limitation combined with thermal shut-down and automatic restart protect the device against overload . Device auto mati call y turns off in case of ground pin disconnection.

ABSOLUTE MAXIMUM RATING

Symbol Parameter Value Unit

V

-V I

OUT

I

V

CSENSE

I

GND

V

ESD

E

MAX

P

T

Supply voltage ( continuous) 41 V

CC

Reverse supply voltage (continuous) -0.3 V

CC

Output current ( continuo us), for each channel 15 A Reverse output current (continu ous), for each channel -15 A

R

Input current +/- 10 mA

IN

Current sense maximum voltage Ground current at T

< 25°C (continuous) -200 mA

pins

-3

+15

Electro static Discharge ( Human Body M odel: R=1.5KΩ; C=100pF)

- INPUT

- CURRENT SENSE

- OUTPUT

- V

CC

Maxim u m Sw itchin g En ergy (L=0.11m H ; R Power dissipation (per island) at T

tot

Junction operat ing temperature Internally Limited ° C

j

Storage temperature -55 to 150 °C

stg

=0Ω; V

L

=13.5V ; T

bat

=150ºC ; IL=40A)

jstart

=25°C 6.25 W

lead

4000 2000 5000 5000

126 mJ

V V

V V V V

(**) See app lication sch em atic at page 9.

June 20 03 1/18

VNQ600A

BLOCK DIAGRAM

OVERVOLTAGE

UNDERVOLT AGE

1,2

V

CC

INPUT 1

INPUT 2

GND 1,2

INPUT 3

INPUT 4

GND 3,4

OVERTEMP. 1

OVERTEMP. 2

OVERTEMP. 3

OVERTEMP. 4

LOGIC

DRIVER 1

I

OUT1

DRIVER 2

I

OUT2

OVERVOLT AGE

UNDERVOLTAGE

DRIVER 3

I

OUT3

DRIVER 4

I

OUT4

DEMA G 1

I

LIM1

K

DEMAG 2

I

LIM2

K

DEMAG 3

I

LIM3

K

DEMAG 4

I

LIM4

K

OUTPUT 1

CURRENT SENSE 1

OUTPUT 2

CURRENT SENSE 2

3,4

V

CC

OUTPUT 3

CURRENT SENSE 3

OUTPUT 4

CURRENT SENSE 4

2/18

CURRENT AND VOLTAGE CO NVENTIONS

I

VNQ600A

S1,2

I

IN1

SENSE3

V

IN4

I

SENSE1

I

IN2

I

SENSE2

I

IN3

I

SENSE3

I

IN4

I

SENSE4

V

SENSE4

V

IN1

V

SENSE1

V

IN2

V

SENSE2

V

IN3

V

CONNECTION DIAGRAM ( TOP VIEW)

VCC1,2 GND 1,2 INPUT2 INPUT1 CURRENT

CURRENT SENS E 2 V

CC

V

CC

GND 3,4 INPUT4

INPUT3 CURRENT SE NSE 3 CURRENT SE NSE 4

V

CC

SENSE 1

1,2

3,4

V

CC1,2

INPUT1 CUR. SENSE1 INPUT2 CUR. SENSE2

INPUT3 CUR. SENSE3 INPUT4 CUR. SENSE4

GND

1,2

1

14 15

OUTPUT1

OUTPUT2

OUTPUT3

OUTPUT4

I

GND1,2

V

CC3,4

GND

V

CC3,4

V

CC1,2

I

S3,4

I

OUT1

I

OUT2

I

OUT3

V

OUT3

I

OUT4

V

OUT4

3,4

I

GND3,4

28

V

1,2

CC

V

OUT2

V

OUT1

OUTPUT 1 OUTPUT 1 OUTPUT 1

OUTPUT 2 OUTPUT 2 OUTPUT 2

OUTPUT 3 OUTPUT 3 OUTPUT 3 OUTPUT 4

OUTPUT 4 OUTPUT 4 V

3,4

CC

3/18

VNQ600A

THERMAL DATA (Per island)

Symbol Parameter Value Unit

R

thj-lead

R

thj-amb

R

thj-amb

(*) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at leas t 35µ m thick) connected to all VCC pins.

Horizontal mounting and no artificial air flow.

ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C<Tj<150°C; unless otherwise specified) (Per each channel) POWER

Symbol Parame ter Test Conditions Min Typ Max Uni t

(**) Operating supply voltage 5.5 13 36 V

V

CC

(**) Undervoltage sh ut-down 3 4 5.5 V

V

USD

(**) Overvolta ge shut-down 36 V

V

OV

R

ON

V

clamp

I

(**) Supply cu rrent

S

I

L(off1)

I

L(off 2)

I

L(off 3)

I

L(off4)

Ther m al re si s ta nce Junction-lead 20 °C/W Thermal resistan ce Junction-ambient (one chip ON) 60 (*) °C/W Thermal resistan ce Junction-ambient (two chips ON ) 46 (*) °C/W

On state res istance

1,2,3,4=5A; Tj=25°C

I

OUT

I

1,2,3,4=5A; Tj=150°C

OUT

I

1,2,3,4=3A; V

OUT

CC

=6V

35 70

120

Clamp Volt age ICC=20mA (see note 1) 41 48 55 V

Off Stat e; V Off Stat e; V T

=25°C

j

On State; V

=3.9K Ω

R

SENSE

Off state output current VIN=V

OUT

Off State Output Current VIN=0V; V Off State Output Current VIN=V Off State Output Current VIN=V

OUT OUT

=13V; VIN=V

CC

=13V; VIN=V

CC

OUT OUT

=0V =0V;

12

=13V; VIN=5V; I

CC

OUT

=0A;

=0V 0 50 µA

=3.5V -75 0 µA

OUT

=0V; Vcc=13V; Tj =125°C 5 µA =0V; Vcc=13V; Tj =25°C 3 µA

40

25

6

mΩ mΩ mΩ

µA

mA

SWITCHING (VCC=13V)

Symbol Parameter Test Conditions Min Typ Max Unit

t

D(on)

t

D(off)

/dt)onTurn-on voltage slope R1=2.6Ω channels 1,2,3,4 ( see fig. 1) 0.20 V/µs

(dV

OUT

/dt)

(dV

OUT

Turn-on del a y time R1=2.6Ω channels 1,2,3,4 ( see fig. 1) 40 µs Turn-off delay time R1=2.6Ω channels 1,2,3,4 (see fig. 1) 40 µs

Turn-off voltage slope R1=2.6Ω channels 1,2,3,4 ( see fig. 1) 0.20 V/µs

off

PROTECTIONS

Symbol Parameter Te st Conditions Mi n Typ Max Unit

I

lim

T

TSD

T

R

T

hyst

V

demag

V

ON

(**) Per island

=13V

V

DC Short circuit current

CC

5.5V<V

CC

<36V Thermal shut-down temper ature Thermal reset

temper ature Thermal hysteresis 7 15 °C Turn-off output voltage

clamp Output voltage dr op

limitation

I

=2A; L= 6m H VCC-41 VCC-48 VCC-55 V

OUT

=0.5A; Tj= -40°C.. .+150°C 50 mV

I

OUT

25 40 70

70

150 175 200 °C

135 °C

4/18

1

A A

VNQ600A

CURRENT SENSE (9V < V

< 16V) (See Fig. 3)

CC

Symbol Parameter Test Conditions Min Typ Max Unit

I

K

dK

1/K1

K

dK2/K

K

dK3/K

V

SENSE1,2

V

SENSEH

1

2

3

I

OUT/ISENSE

Current Sense Ratio Drift

I

OUT/ISENSE

Current Sense Ratio Drift

2

I

OUT/ISENSE

Current Sense Ratio Drift

3

Max analog sense output voltage

Analog sense output voltage in overtemperature condition

Analog Sense Output

R

VSENSEH

t

DSENSE

Impeda nce in Overtem peratur e Condition

Current sense delay response to 90% I

=0.35A ; V

OUT1,2

T

= -40°C. .. +150°C

j

I

or I

OUT1

V

SENSE

open; Tj= -40°C...150° C I

=2A; V

OUT

T

= 25°C...+150°C

j

or I

I

OUT1

other channels open; T

=-40°C...150°C

j

I

=4A; V

OUT

T

= 25°C...+150°C

j

or I

I

OUT1

=0.5A;

OUT2

=0.5V; other channels

SENSE

=5A; V

OUT2

SENSE

=15A; V

OUT2

other channels open;

=-40°C...150°C

T

j

=5.5V; I

V

CC

R

SENSE

V

CC

R

SENSE

VCC=13V; R

=10KΩ

>8V; I

=10KΩ

OUT1,2

SENSE

VCC=13V; Tj>T open

(see note 2) 500 µs

SENSE

=0.5V;

SENSE

3300 4350 6000

-10 +10 %

=2.5V; Tj=-40°C

=4V;

SENSE

3900 4150

4850 4850

6000 5800

-6 +6 %

=4V; Tj=-40°C

=4V;

SENSE

4150 4400

4900 4900

6000 5750

-6 +6 %

=2A;

=4A;

2

4

=3.9K Ω 5V

; All channels

TSD

400 Ω

V

LOGIC INPUT

Symbol Parameter Test Conditions Min Typ Max Unit

V

IL

V

IH

V

I(hyst)

I

IL

I

IH

V

ICL

Note 1: V

clamp

Note 2: current sense signal delay after pos itive input sl ope.

Note: Sense pin doesn’t have to be left float ing.

Low level input voltage 1.25 V High level input voltage 3.25 V Input hysteres is voltag e 0.5 V Low level input current VIN=1.25V 20 65 µA High level input current VIN=3.25V 75 110 µA

=1mA

I

Input clamp voltage

and VOV are correlated. Typical difference is 5V.

IN

I

= -1mA

IN

66.8

-0.7

8V

V

5/18

2

TRUTH TABLE (per channel)

CONDITIONS INPUT OUTPUT SENSE

Normal op eration

Overtemperature

Undervoltage

Overvoltage

Short circuit to GND

Short circuit to V Negative output voltage

clamp

CC

VNQ600A

L

H

L

H

L

H

L

H

L H H

L H

LL 0

L

H

L L L L L L L L L

(T

j<TTSD

(T

j>TTSD

H H

0

Nominal

0

V

SENSEH

0 0 0 0

0 ) 0 ) V

SENSEH

0

< Nomin a l

6/18