SGS Thomson Microelectronics VNQ600 Datasheet

®

VNQ600

QUAD CHAN NEL HIGH SIDE SOLID STATE RELAY

TYPE R

DS(on)

(*) I

lim

V

CC

VNQ600 35mΩ 25A 36 V

(*) Per each channel

■ DC SHORT CIRCUIT CURRENT: 25A

■ CMOS COMPATIBLE INPUTS

■ PROPORTIONAL LOAD CURRENT SENSE

■ UNDERVOLTAGE & OVERVOLTAGE

SHUT-DOWN

n

■ OVERVOLTAGE CLAMP

■ THERMAL SHUT-DOWN

■ CURRENT LIMITATION

■ VERY LOW STAND-BY POWER DISSIPATION

■ PROTECTION AGAINST:

LOSS OF GROUND & LOSS OF VCC

n

■ REVERSE BATTERY PROTECTION (**)

SO-28 VNQ600 VNQ60013TR

package. The VND600 is a monolithic device designed in| STMicroelectronics VIPower M0-3 Technology. The VNQ600 is intended for dri ving any type of multiple loads with one side connected to ground. This device has four independent channels and four analog sense outputs which

SO-28 (DOUBLE ISLAND)

ORDER CODES

PACKAGE TUBE T&R

deliver currents proportional to the outputs currents. Active current limitation combined with

DESCRIPTION

The VNQ600 is a quad HSD formed by assembling two VND600 chips in the same SO-28

thermal shut-down and automatic restart protect the device against overload . Device auto mati call y turns off in case of ground pin disconnection.

ABSOLUTE MAXIMUM RATING

Symbol Parameter Value Unit

V

-V I

OUT

I

V

CSENSE

I

GND

V

ESD

E

MAX

P

T

Supply voltage ( continuous) 41 V

CC

Reverse supply voltage (continuous) -0.3 V

CC

Output current ( continuo us), for each channel 15 A Reverse output current (continu ous), for each channel -15 A

R

Input current +/- 10 mA

IN

Current sense maximum voltage Ground current at T

< 25°C (continuous) -200 mA

pins

-3

+15

Electro static Discharge ( Human Body M odel: R=1.5KΩ; C=100pF)

- INPUT

- CURRENT SENSE

- OUTPUT

- V

CC

Maxim u m Sw itchin g En ergy (L=0.11m H ; R Power dissipation (per island) at T

tot

Junction operat ing temperature Internally Limited ° C

j

Storage temperature -55 to 150 °C

stg

=0Ω; V

L

=13.5V ; T

bat

=150ºC ; IL=40A)

jstart

=25°C 6.25 W

lead

4000 2000 5000 5000

126 mJ

V V

V V V V

(**) See app lication sch em atic at page 9.

June 20 03 1/18

VNQ600

BLOCK DIAGRAM

OVERVOLTAGE

UNDERVOLT AGE

1,2

V

CC

INPUT 1

INPUT 2

GND 1,2

INPUT 3

INPUT 4

GND 3,4

OVERTEMP. 1

OVERTEMP. 2

OVERTEMP. 3

OVERTEMP. 4

LOGIC

DRIVER 1

I

OUT1

DRIVER 2

I

OUT2

OVERVOLT AGE

UNDERVOLTAGE

DRIVER 3

I

OUT3

DRIVER 4

I

OUT4

DEMA G 1

I

LIM1

K

DEMAG 2

I

LIM2

K

DEMAG 3

I

LIM3

K

DEMAG 4

I

LIM4

K

OUTPUT 1

CURRENT SENSE 1

OUTPUT 2

CURRENT SENSE 2

3,4

V

CC

OUTPUT 3

CURRENT SENSE 3

OUTPUT 4

CURRENT SENSE 4

2/18

CURRENT AND VOLTAGE CO NVENTIONS

I

VNQ600

S1,2

I

IN1

SENSE3

V

IN4

I

SENSE1

I

IN2

I

SENSE2

I

IN3

I

SENSE3

I

IN4

I

SENSE4

V

SENSE4

V

IN1

V

SENSE1

V

IN2

V

SENSE2

V

IN3

V

CONNECTION DIAGRAM ( TOP VIEW)

VCC1,2 GND 1,2 INPUT2 INPUT1 CURRENT

CURRENT SE NSE 2 V

CC

V

CC

GND 3,4 INPUT4

INPUT3 CURRENT SE NSE 3 CURRENT SE NSE 4 V

CC

SENSE 1

1,2 3,4

3,4

V

CC1,2

INPUT1 CUR. SENSE1 INPUT2 CUR. SENSE2

INPUT3 CUR. SENSE3 INPUT4 CUR. SENSE4

GND

1,2

1

14 15

OUTPUT1

OUTPUT2

OUTPUT3

OUTPUT4

I

GND1,2

V

CC3,4

GND

V

CC3,4

V

CC1,2

I

S3,4

I

OUT1

I

OUT2

I

OUT3

V

OUT3

I

OUT4

V

OUT4

3,4

I

GND3,4

28

V

1,2

CC

V

OUT2

V

OUT1

OUTPUT 2 OUTPUT 2 OUTPUT 2

OUTPUT 1 OUTPUT 1 OUTPUT 1

OUTPUT 4 OUTPUT 4 OUTPUT 4 OUTPUT 3

OUTPUT 3 OUTPUT 3 V

3,4

CC

3/18

VNQ600

THERMAL DATA (Per island)

Symbol Parameter Value Unit

R

thj-lead

R

thj-amb

R

thj-amb

(*) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at leas t 35µ m thick) connected to all VCC pins.

Horizontal mounting and no artificial air flow.

ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C<Tj<150°C; unless otherwise specified) (Per each channel) POWER

Symbol Parameter Test Condi tions Min Typ Max Unit

V

CC

V

USD

V

OV

R

ON

V

clamp

I

(**) Supply current

S

I

L(off1)

I

L(off 2)

I

L(off3)

I

L(off4)

Thermal resistance Junction-lead 20 °C/W Thermal resistance Juncti on-ambient (one chip ON) 60 (*) °C/W Thermal Resistan ce Juncti on-ambient (two chips ON) 46 (*) °C/W

(**) Operating supply voltage 5.5 13 36 V

(**) Undervoltage shut-down 3 4 5.5 V

(**) Overvo ltage shut-down 36 V

On state res istance

1,2,3,4=5A; Tj=25°C

I

OUT

I

1,2,3,4=5A; Tj=150°C

OUT

I

1,2,3,4=3A; V

OUT

CC

=6V

35 70

120

Clamp Volt age ICC=20mA (see note 1) 41 48 55 V

Off Stat e; V Off Stat e; V T

=25°C

j

On State; V

=0A; R

I

OUT

Off state output current VIN=V

OUT

Off State Output Current VIN=0V; V Off State Output Current VIN=V Off State Output Current VIN=V

OUT OUT

=13V; VIN=V

CC

=13V; VIN=V

CC

OUT OUT

=0V =0V;

12

=13V; VIN=5V;

CC

=3.9KΩ

SENSE

=0V 0 50 µA

=3.5V -75 0 µA

OUT

=0V; Vcc=13V; Tj =125°C 5 µA =0V; Vcc=13V; Tj =25°C 3 µA

40

25

6

mΩ mΩ mΩ

µA

mA

SWITCHING (VCC=13V)

Symbol Parameter Test Conditions Min Typ Max Unit

t

d(on)

t

d(off)

Turn-on del a y time RL=2.6Ω channels 1,2,3,4 (see fig. 1) 40 µs Turn-off delay time RL=2.6Ω channels 1,2,3,4 (see fig. 1) 40 µs

See

/dt)onTurn-on voltage slope RL=2.6Ω channels 1,2,3,4 (see fig. 1)

(dV

OUT

relative

diagram

See

(dV

OUT

/dt)

Turn-off voltage s lope RL=2.6Ω channels 1,2,3,4 (see fig. 1)

off

relative

diagram

PROTECTIONS

Symbol Parameter Test Conditions Min Typ Max Unit

V

I

lim

T

TSD

T

R

T

hyst

V

demag

V

ON

(**) Per island

4/18

=13V

DC Short circuit current

CC

5.5V<V

CC

<36V

Thermal shut-down temper ature

Thermal reset temperatu re 135 °C Thermal hysteresis 7 15 °C Turn-off output voltage clamp I Output voltage drop limitation I

=2A; L= 6m H VCC-41 VCC-48 VCC-55 V

OUT

=0.5A; Tj= -40°C.. .+150°C 50 mV

OUT

25 40 70

70

150 175 200 °C

V/µs

A A

1

VNQ600

CURRENT SENSE (9V< V

< 16V) (See Fig. 3)

CC

Symbol Parameter Test Conditions Min Typ Max Unit

I

K

dK

1/K1

K

dK2/K

K

dK3/K

V

SENSE1,2

V

SENSEH

1

2

3

I

OUT/ISENSE

Current Sense Ratio Drift

I

OUT/ISENSE

Current Sense Ratio Drift

2

I

OUT/ISENSE

Current Sense Ratio Drift

3

Max analog sense output voltage

Analog sense output voltage in overtemperature condition

Analog Sense Output

R

VSENSEH

t

DSENSE

Impeda nce in Overtem peratur e Condition

Current sense delay response to 90% I

=0.35A ; V

OUT1,2

T

= -40°C. .. +150°C

j

I

or I

OUT1

V

SENSE

open; Tj= -40°C...150° C I

=2A; V

OUT

T

= 25°C...+150°C

j

or I

I

OUT1

other channels open; T

=-40°C...150°C

j

I

=4A; V

OUT

T

= 25°C...+150°C

j

or I

I

OUT1

other channels open; T

=-40°C...150°C

j

=5.5V; I

V

CC

R

SENSE

V

>8V; I

CC

R

SENSE

VCC=13V; R

=0.5A;

OUT2

=0.5V; other channels

SENSE

=5A; V

OUT2

SENSE

=15A; V

OUT2

OUT1,2

=10KΩ

OUT1,2

=10KΩ

SENSE

VCC=13V; Tj>T open

(see note 2) 500 µs

SENSE

=0.5V;

SENSE

3300 43 50 6000

-10 +10 %

=2.5V; Tj=-40°C

=4V;

SENSE

3900 4150

4850 4850

6000 5800

-6 +6 %

=4V; Tj=-40°C

SENSE

=4V;

4150 4400

4900 4900

6000 5750

-6 +6 %

=2A;

=4A;

2

4

=3.9K Ω 5V

; All channels

TSD

400 Ω

V

LOGIC INPUT

Symbol Parameter Test Conditions Min Typ Max Unit

V

IL

V

IH

V

I(hyst)

I

IL

I

IN

V

ICL

Note 1: V

clamp

Note 2: current sense signal delay after pos itive input sl ope.

Note: Sense pin doesn’t have to be left float ing.

Low level input voltage 1.25 V High level input voltage 3.25 V Input hysteres is voltag e 0.5 V Input current VIN=1.5V 1 µA Input current VIN=3.5V 10 µA

=1mA

I

Input clamp voltage

and VOV are correlated. Typical difference is 5V.

IN

I

= -1mA

IN

66.8

-0.7

8V

V

5/18

2

TRUTH TABLE (per channel)

CONDITIONS INPUT OUTPUT SENSE

Normal op eration

Overtemperature

Undervoltage

Overvoltage

Short circuit to GND

Short circuit to V Negative output voltage

clamp

CC

VNQ600

L

H

L

H

L

H

L

H

L H H

L H

LL 0

L

H

L L L L L L L L L

(T

j<TTSD

(T

j>TTSD

H H

0

Nominal

0

V

SENSEH

0 0 0 0

0 ) 0 ) V

SENSEH

0

< Nomin a l

6/18