SGS Thomson Microelectronics VNQ05XSP1613TR, VNQ05XSP16 Datasheet

®
VNQ05XSP16
QUAD CHAN NEL HIGH SIDE SOLID STATE RELAY
TYPE RON(*) I
OUT
V
CC
VNQ05XSP16 110m 5A (*) 36 V
(*) Per each channel
OUTPUT CURRENT (CONTINUOUS): 5A
CMOS COMPATIBLE INPUTS
MULTIPLEXED PROPORTIONAL LOAD
UNDERVOLTAGE & OVERVOLTAGE
PowerSO-16
ORDER CODES
PACKAGE TUBE T&R
PowerSO-16™ VNQ05XSP16 VNQ05XSP1613TR
TM
SHUT- DOWN
OVERVOLTAGE CLAMP
THERMAL SHUT DOWN
CURRENT LIMITATION
VERY LOW STAND-BY POWER DISSIPATION
PROTECTION AGAINST:
n LOSS OF GROUND & LOSS OF V
REVERSE BATTERY PROTECTION (**)
CC
DESCRIPTION
The VNQ05XSP16 is a monolithic device designed in STMicroelectronics VIPower M0-3
Technology. It is intende d for driving any type of multiple loads with one side connec ted to grou nd. Active V
against low energy spikes (see ISO7637 transient
pin voltage clamp protects the devi ce
CC
compatibility table). This device has four independent channels and one multiplexed analog sense output which del iver a current propor tional to the selected output current. SenseEnable pin allows to connect any number of VNQ05XSP16 on the same Current Sense line. Active current limitation combined with thermal shut-down and automatic restart protect the device against overload. Device automatically turns off in case of ground pin disconnection.
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
V
-V I
OUT
I I
V
CSENSE
I
GND
V
ESD
P
E
MAX
T
T
STG
T
Supply voltage (continuous) 41 V
CC
Reverse supply voltage (continuous) -0.3 V
CC
Output current (continuous), for each channel Internally limited A Rever se output c urrent (c ontinuous), for each channel -5 A
R
Input current (IN1,IN2,IN3,IN4,SELA,SELB,SENSENABLE) +/- 10 mA
IN
Current sense maximum voltage Ground current at T
<25°C (continuous) -200 mA
case
Electros tatic Discharge (H um an Body Mo del: R=1.5; C=100pF )
- INPUT
- CURRENT SENSE
- OUTPU T
- V
CC
Power dissipation at T
tot
=25°C 78 W
case
Maximum Switching Energy (L=1.72mH; R Junction operating temperature Internally limited °C
j
Case Operating Temperature - 40 to 150 °C
c
=0; V
L
=13.5V; T
bat
=150ºC; IL=7.5A)
jstart
Storage temperature -55 to 150 °C
-3
+15
4000 2000 5000 5000
76 mJ
V V
V V V V
(**) See appl ic ation schem atic at page 9
March 2 003 1/17
VNQ05XSP16
BLOCK DIAGRAM
OVERVOLTAGE
UNDERVOLT AGE
V
CC
INPUT 1 INPUT 2 INPUT 3 INPUT 4
SELECT A
SELECT B
SENSE ENABL E
GND
CURRENT SENSE
OVERTEMP . 1 OVERTEMP. 2
OVERTEMP. 3
OVERTEMP. 4
ANALO G
LOGIC
DIAG
LOGIC
QUAD
Mux
DRIVER 1
DEMAG
Ot
1
CS
1
Same structure for the channels2,3,4
I
Vds
1
LIM 1
LIM 1
K
CS1 CS2 CS3 CS4
I
OUT1
OUTPUT 1
OUTPUT 2
OUTPUT 3
OUTPUT 4
2/17
CURRENT AND VOLTAGE CO NVENTIONS
I
IN1
I
V
SELB
V
IN2
I
IN3
I
IN4
I
SENSE
I
SELA
I
SELB
I
SENSENABLE
SENSENABLE
V
IN1
V
IN2
V
IN3
V
IN4
V
SENSE
V
SELA
INPUT1 INPUT2
INPUT3 INPUT4
V
CC
SENSE SELA
SELB
SENSENABLE
GND
OUTPUT1
OUTPUT2
OUTPUT3
OUTPUT4
I
GND
I
S
I
OUT1
I
OUT2
I
OUT3
I
OUT4
V
OUT4
V
VNQ05XSP16
V
OUT2
OUT3
V
OUT1
V
CC
CONNECTION DIAGRAM ( TOP VIEW)
INPUT 1 INPUT 2 INPUT 3
INPUT 4
C.SENSE
SENSENABLE
SELA SELB
V
CC
10
11
12 13 14 15 16
17
89 7
6 5 4
3 2
1
GROUND N.C. OUTPUT 1
OUTPUT 2 N.C. OUTPUT 3 OUTPUT 4 V
CC
3/17
VNQ05XSP16
THERMAL DATA
Symbol Parameter Value Unit
R
thj-case
R
thj-amb
Thermal resistance jun ction-case (MAX) 1.6 °C/W Thermal resistance jun ction-a m bient (MAX) 51.6 (*) °C/W
(*) When mounted on FR4 printed circuit board with 0.5 cm² of copper area (at least 35 µm thick) connected to all V
CC
pins
ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -4 0°C<Tj<150°C; unless o therwise specified) (Per each channel) POWER
Symbol Parameter Test Conditions Min Typ Max Unit
V
V
USD
V
R
V
clamp
I
I
L(off1)
I
L(off2)
I
L(off3)
I
L(off4)
SWITCHING ( V
Operating supply voltage 5.5 13 36 V
CC
Under voltage shut down 3 4 5.5 V Overvoltage shut down 36 V
OV
1,2,3,4=1A; Tj=25°C
I
OUT
On state resistan ce
ON
I
1,2,3,4=1A; Tj=150°C
OUT
I
1,2,3,4=0.5A; VCC=6V
OUT
Clam p Vo ltage ICC=20mA (See note 1) 41 48 55 V
CC
=13V
OUT
=0A;
Supply current
S
Off State Output Current VIN=V Off State Output Current VIN=0V; V Off State Output Current VIN=V Off State Output Current VIN=V
=13V)
CC
Off state; Inputs=n.c.; V On state; V R
SENSE
=5V; VCC=13V; I
IN
=3.9k
=0V 0 50 µA
OUT
=3.5V -75 0 µA
OUT
=0V; Vcc=13V; Tj=125°C 5 µA
OUT
=0V; Vcc=13V; Tj=25°C 3 µA
OUT
110 220 330
80 10
m m m
µA
mA
Symbol Parameter Test Conditions Min Typ Max Unit
Turn-on delay tim e RL=2.6Ω channels 1,2,3,4 (see figure 2) 40 µs Turn-off delay time RL=2.6Ω channels 1,2,3,4 (see figure 2) 40 µs
/
OUT
Turn-on voltage s lope RL=2.6Ω channels 1,2,3,4 (see figure 2)
on
/
OUT
Turn-off voltage slope RL=2.6Ω channels 1,2,3,4 (see figure 2)
off
See
relative
diagram
See
relative
diagram
V/µs
V/µs
(dV
(dV
t
d(on)
t
d(off)
dt)
dt)
PROTECTIONS
Symbol Parameter Test Conditions Min Typ Max Unit
I
lim
T
TSD
T
T
HYST
V
demag
V
ON
Note 1: V
=13V
V
DC short circuit current
CC
5.5V<V
CC
<36V Thermal shut down temperature Thermal reset
R
temperature Ther m al hy steresis 715 °C Turn-off output voltage
clamp Output voltage dr op
limitation
and VOV are correlated. Typical difference is 5V.
clamp
I
=2A; L=6mH VCC-41 VCC-48 VCC-55 V
OUT
I
=0.1A
OUT
T
=-40°C...+150°C
j
57.51010A
150 175 200 °C
135 °C
50 mV
4/17
1
A
VNQ05XSP16
CURRENT SENSE (9V< VCC <16V)
Symbol Parameter Test Conditions Min Typ Max Unit
I
K
1
dK
1/K1
K
2
dK
2/K2
K
3
dK
3/K3
I
SENSEO
V
SENSE1,2,3,4
I
OUT/ISENSE
Current Sense Ratio Drift
I
OUT/ISENSE
Current Sense Ratio Drift
I
OUT/ISENSE
Current Sense Ratio Drift
Analog Sense Leakage Current
Max analog sense output voltage
Analog sense output
V
SENSEH
voltage in overtemperature condition
Analog sense output
R
VSENSEH
impe da nc e i n overt em p erature condition
t
DSENSE
Current sense delay
=0.1A; V
OUT
T
=-40...+150°C
j
I
=0.1A; V
OUT
T
= -40°C...+150°C
j
I
=1.0A, V
OUT
T
=-40...+150°C
j
I
=1.0A; V
OUT
T
=-40°C...+150°C
j
I
=2.0A, V
OUT
T
=-40...+150°C
j
I
=2.0A; V
OUT
T
=-40°C...+150°C
j
VCC=6...16V; I
=0A;V
OUT
T
=-40°C...+150°C
j
V
CC
R
SENSE
V
CC
R
SENSE
=5.5V, I
=10k
>8V, I
=10k
SENSE
OUT1,2,3,4
VCC=13V; R
=13V; Tj>T
V
CC
All Channels Open
V
=13V; R
CC
(see note 2)
=0.5V
SENSE
SENSE
SENSE
SENSE
SENSE
SENSE
=0V;
OUT1,2,3,4
=0.5V;
=4V
=4V;
=4V
=4V;
=1.0A
650 950 1200
-10 +10 %
800 1000 1200
-8 +8 %
850 1000 1150
-6 +6 %
010µA
2
=2.0A
4
= 3.9k 5.5 V
SENSE
;
TSD
SENSE
=3.9k
400
300 500 µs
V
V
LOGIC CHARACTERISTICS (Inputs, Sela&b, Sensenable)
Symbol Parameter Test Conditions Min Typ Max Unit
V
IL
V
IH
V
I(hyst)
I
IL
I
IN
V
ICL
Note 2: current sense signal delay after pos itive input sl ope.
Note: Sense pin doesn’t have to be left float ing.
Inpu t low level voltage
Input high level voltage
Input hysteres is voltage
Low level input current
High level inp u t current
Input clamp voltage
=1.25V 1 µA
V
IN
VIN=3.25V 10 µA I
=1mA
IN
I
=-1mA
IN
3.25 V
0.5 V
66.8
-0.7
1.25 V
8V
V
5/17
2
VNQ05XSP16
TRUTH TABLE
CONDITIONS INPUT OUTPUT SENSE
Normal op eration
Overtemperature
Undervoltage
Overvoltage
L H L H L H L H L
Short circuit to GND
H H
Short circuit to V
CC
Negative output voltage clamp
L H
LL 0
TRUTH TABLE
SENSENABLE SELB SELA SENSE
L X X High Impedance HL LI HL HI HH LI HH HI
Figure 1: I
OUT/ISENSE
versus I
OUT
L
H
L L L L L L L L L
(T
(T H H
0
Nominal
0
V
SENSEH
0 0 0 0 0
) 0
j<TTSD
) V
j>TTSD
SENSEH
0
< Nomin a l
SENSE=IOUT1 SENSE=IOUT2 SENSE=IOUT3 SENSE=IOUT4
/K /K /K /K
6/17
1
I
OUT/ISENSE
1500 1400 1300 1200 1100 1000
900 800 700 600 500
012345678910
I
(A )
OUT
max. T j= -4 0°C< < 150°C
typical value
min. T j= - 40 ° C< <150°
C
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