SGS Thomson Microelectronics VNP7N04 Datasheet
VNP7N04
”OMNIFET”:
FULLY AUTOPROTECTED POWER MOSFET
June 1996
1
2
3
TO-220
BLOCK DIAGRAM
TYPE V
clamp
R
DS(on)
I
lim
VNP7N04 42 V 0.14 Ω 7A
■ LINEARCURRENTLIMITATION
■ THERMALSHUT DOWN
■ SHORTCIRCUITPROTECTION
■ INTEGRATEDCLAMP
■ LOW CURRENTDRAWN FROM INPUT PIN
■ DIAGNOSTICFEEDBACK THROUGHINPUT
PIN
■ ESDPROTECTION
■ DIRECTACCESS TO THE GATE OF THE
POWERMOSFET(ANALOGDRIVING)
■ COMPATIBLEWITH STANDARD POWER
MOSFET
■ STANDARD TO-220 PACKAGE
DESCRIPTION
The VNP7N04 is a monolithicdevice made using
SGS-THOMSON Vertical Intelligent Power M0
Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect
the chip in harsh enviroments.
Faultfeedback can be detected by monitoringthe
voltageat the input pin.
1/11
ABSOLUTEMAXIMUM RATING
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (Vin= 0 ) Int er nall y Clamped V
V
in
Input V ol ta ge 18 V
I
D
Drain Current Internally Limited A
I
R
Reverse DC O utput Current -7 A
V
esd
Elect r o st at ic Discharge (C= 100 pF, R=1. 5 KΩ)
2000 V
P
tot
Tot al Dis s ipation at Tc=25oC31W
T
j
Oper at i ng Junct ion Temperat ure Internally Lim ited
o
C
T
c
Case Operating Temperature Internally Limited
o
C
T
stg
St orage Temperature -55 to 150
o
C
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resis t an ce Ju nct ion-case Max
Ther mal Resis t an ce Ju nct ion-ambient Max
4
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
=25oC unlessotherwise specified)
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
CLAMP
Drain-source Clamp
Volt age
ID= 200 mA Vin= 0 36 42 48 V
V
CLTH
Drain-source Clamp
Thr eshold Volta ge
ID=2mA Vin=0 35 V
V
INCL
Input-Source Reverse
Clamp Voltage
Iin=-1mA -1 -0.3 V
I
DSS
Zer o Inpu t V olt ag e
Drain Current (V
in
=0)
V
DS
=13V Vin=0
V
DS
=25V Vin=0
50
200
µA
µA
I
ISS
Supply Current f rom
Input Pin
VDS=0V Vin= 10 V 250 500 µA
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
IN(th)
Input T hreshold
Volt age
VDS=VinID+Iin=1mA 0.8 3 V
R
DS(on)
St at ic D rain- source On
Resistance
Vin=10V ID=3.5A
V
in
=5V ID=3.5A
0.14
0.28
Ω
Ω
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
g
fs
(∗)Forward
Tr ansc on ductance
VDS=13V ID= 3.5 A 3.5 5 S
C
oss
Out put Capacit ance VDS=13V f=1MHz Vin= 0 250 400 pF
VNP7N04
2/11
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING(∗∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise T im e
Turn-off Delay Time
Fall T ime
VDD=15V Id=3.5A
V
gen
=10V R
gen
=10Ω
(see figure 3)
50
60
130
50
100
120
200
100
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise T im e
Turn-off Delay Time
Fall T ime
VDD=15V Id=3.5A
V
gen
=10V R
gen
= 1000 Ω
(see figure 3)
140
0.4
2.5
1
280
0.8
4
2
ns
µs
µs
µs
(di/dt)
on
Tur n-on Current Slope VDD=15V ID=3.5A
V
in
=10V R
gen
=10Ω
50 A /µs
Q
i
Total Input Charge VDD=12V ID=3.5A Vin= 10 V 18 nC
SOURCE DRAIN DIODE
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
SD
(∗)ForwardOnVoltage ISD=3.5A Vin=0 1.6 V
t
rr
(∗∗)
Q
rr
(∗∗)
I
RRM
(∗∗)
Reverse Recov ery
Time
Reverse Recov ery
Charge
Reverse Recov ery
Current
I
SD
=3.5A di/dt=100A/µs
V
DD
=30V Tj=25oC
(see test circuit, figure 5)
70
0.2
3.6
ns
µC
A
PROTECTION
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
lim
Drain Cur rent Limit Vin=10V VDS=13V
V
in
=5V VDS=13V
5
5
7
7
10
10
A
A
t
dlim
(∗∗) St ep Res pon se
Current Lim it
Vin=10V
V
in
=5V
13
15
20
25
µs
µs
T
jsh
(∗∗) O vertem perat ure
Shut dow n
150
o
C
T
jrs
(∗∗) Overtem perat ure Res et 135
o
C
I
gf
(∗∗) Fault Sink Current Vin=10V VDS=13V
V
in
=5V VDS=13V
50
20
mA
mA
E
as
(∗∗) S i ngle Pulse
Avalanche E nergy
starting Tj=25oCVDD=20V
V
in
=10V R
gen
=1KΩ L=30mH
0.4 J
(∗) Pulsed: Pulse duration = 300 µs,duty cycle 1.5 %
(∗∗) Parameters guaranteed by design/characterization
VNP7N04
3/11
During normal operation, the Input pin is
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC to 50 KHz. The only difference
from the user’s standpoint is that a small DC
current (I
iss
) flows into the Input pin in order to
supplythe internalcircuitry.
The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:
internally set at 42V, along with the rugged
avalanche characteristics of the Power
MOSFET stage give this device unrivalled
ruggedness and energy handling capability.
This feature is mainly important when driving
inductiveloads.
- LINEAR CURRENT LIMITER CIRCUIT: limits
the drain current Id to Ilim whatever the Input
pin voltage. When the current limiter is active,
the device operates in the linear region, so
power dissipation may exceed the capability of
the heatsink. Both case and junction
temperatures increase, and if this phase lasts
long enough, junction temperature may reach
the overtemperaturethresholdT
jsh
.
- OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION: these are based on sensing
the chip temperatureand are not dependent on
the input voltage. The location of the sensing
element on the chip in the power stage area
ensures fast, accurate detection of the junction
temperature. Overtemperaturecutout occursat
minimum 150
o
C. The device is automatically
restarted when the chip temperature falls
below135
o
C.
- STATUS FEEDBACK: In the case of an
overtemperature fault condition, a Status
Feedback is provided through the Input pin.
The internal protection circuit disconnects the
input from the gate and connects it instead to
ground via an equivalent resistance of 100 Ω.
The failure can be detected by monitoring the
voltage at the Input pin, which will be close to
ground potential.
Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit (with a smallincrease in R
DS(on)
).
PROTECTION FEATURES
VNP7N04
4/11
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