SGS Thomson Microelectronics VNP5N07 Datasheet
VNP5N07
”OMNIFET”:
FULLY AUTOPROTECTED POWER MOSFET
TYPE V
VNP5N07 70 V 0.2 Ω 5A
■ LINEARCURRENTLIMITATION
■ THERMALSHUT DOWN
■ SHORTCIRCUITPROTECTION
■ INTEGRATEDCLAMP
■ LOW CURRENTDRAWN FROM INPUT PIN
■ DIAGNOSTICFEEDBACK THROUGHINPUT
clamp
R
DS(on)
I
lim
PIN
■ ESDPROTECTION
■ DIRECTACCESS TO THE GATE OF THE
POWERMOSFET(ANALOGDRIVING)
■ COMPATIBLEWITH STANDARD POWER
MOSFET
■ STANDARD TO-220 PACKAGE
DESCRIPTION
The VNP5N07 is a monolithicdevice made using
SGS-THOMSON Vertical Intelligent Power M0
Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Built in thermal shut-down, linear
BLOCK DIAGRAM
3
2
1
TO-220
current limitation and overvoltage clamp protect
the chip in harsh enviroments.
Faultfeedback can be detected by monitoring the
voltageat the input pin.
April 1996
1/11
VNP5N07
ABSOLUTEMAXIMUM RATING
Symbol Parameter Value Unit
V
V
V
P
T
THERMAL DATA
R
thj-case
R
thj-amb
Drain-source Voltage (Vin= 0 ) Int er nall y Clamped V
DS
Input V ol ta ge 18 V
in
I
Drain Current Internally Limited A
D
I
Reverse DC O utput Current -7 A
R
Elect r o st at ic Dischar ge ( C= 100 pF , R=1 .5 KΩ) 2000 V
esd
Tot al Dis s ipation at Tc=25oC31W
tot
T
Oper at i ng J un c t ion T em per at ur e Internally Limited
j
T
Case Operating Temperature Internally Limited
c
St orage Temperature -55 to 150
stg
Ther mal Resis t an ce Ju nct ion-case Max
Ther mal Resis t an ce Ju nct ion-ambient Max
4
62.5
o
o
o
C
o
C
o
C
C/W
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
CLAMP
Drain-source Clamp
ID= 200 mA Vin= 0 60 70 80 V
Volt age
V
CLTH
Drain-source Clamp
ID=2mA Vin=0 55 V
Thr eshold Volta ge
V
INCL
Input-Source Reverse
Iin=-1mA -1 -0.3 V
Clamp Voltage
I
I
DSS
ISS
Zer o Inpu t Volt age
Drain Current (V
in
Supply Current f rom
=0)
=13V Vin=0
V
DS
V
=25V Vin=0
DS
50
200
VDS=0V Vin= 1 0 V 250 500 µA
Input Pin
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
IS(th)
Input T hreshold
VDS=VinID+Iin=1mA 0.8 3 V
Volt age
R
DS(on)
St at ic D rain-source O n
Resistance
Vin=10V ID=2.5A
=5V ID=2.5A
V
in
0.200
0.280ΩΩ
DYNAMIC
µA
µA
Symbol Parameter Test Condition s Min. Typ. Max. Unit
g
(∗)Forward
fs
VDS=13V ID=2.5A 3 4 S
Tr ansc on ductance
C
Out put Ca pac itance VDS=13V f=1MHz Vin= 0 200 300 pF
oss
2/11
VNP5N07
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING(∗∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
d(on)
t
d(off)
t
d(on)
t
d(off)
(di/dt)
Q
Turn-on Delay Time
t
Rise T ime
r
Turn-off Delay Time
t
Fall T ime
f
Turn-on Delay Time
Rise T ime
t
r
Turn-off Delay Time
t
Fall T ime
f
Tur n-on Current Slope VDD=15V ID=2.5A
on
Total Input Charge VDD=12V ID=2.5A Vin= 10 V 18 nC
i
VDD=15V Id=2.5A
=10V R
V
gen
gen
=10Ω
(see figure 3)
VDD=15V Id=2.5A
V
=10V R
gen
= 1000 Ω
gen
(see figure 3)
=10V R
V
in
gen
=10Ω
SOURCE DRAIN DIODE
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(∗)ForwardOnVoltage ISD=2.5A VIN=0 1.6 V
SD
Q
I
RRM
t
rr
Reverse Recov ery
(∗∗)
Time
Reverse Recov ery
(∗∗)
rr
Charge
(∗∗)
Reverse Recov ery
Current
I
= 2.5 A di/dt = 100 A/µs
SD
V
=30V Tj=25oC
DD
(see test circuit, figure 5)
50
60
150
40
150
400
3900
1100
100
100
300
80
250
600
5000
1600
35 A /µs
150
0.3
5.7
ns
ns
ns
ns
ns
ns
ns
ns
ns
µC
A
PROTECTION
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
dlim
T
jsh
I
lim
Drain Cur rent Limit Vin=10V VDS=13V
=5V VDS=13V
V
in
(∗∗) St ep Res pon se
Current Lim it
Vin=10V
=5V
V
in
(∗∗) O vertem perat ure
Shut dow n
(∗∗) Overt emperatu re Reset 135
T
jrs
I
(∗∗) Fault Sink Current Vin=10V VDS=13V
gf
E
(∗∗) Single Pulse
as
Avalanche Ener gy
(∗) Pulsed: Pulse duration = 300 µs, duty cycle1.5 %
(∗∗) Parametesguaranteed by design/characterization
=5V VDS=13V
V
in
starting Tj=25oCVDD=20V
=10V R
V
in
=1KΩ L=30mH
gen
3.5
3.5
15
40
5
5
7
7
20
60
150
50
20
0.2 J
A
A
µs
o
C
o
C
mA
3/11
VNP5N07
PROTECTION FEATURES
During normal operation, the Input pin is
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC to 50 KHz. The only difference
from the user’s standpoint is that a small DC
current (I
) flows into the Input pin in order to
iss
supplythe internalcircuitry.
The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:
internally set at 70V, along with the rugged
avalanche characteristics of the Power
MOSFET stage give this device unrivalled
ruggedness and energy handling capability.
This feature is mainly important when driving
inductiveloads.
- LINEAR CURRENT LIMITER CIRCUIT: limits
the drain current Id to Ilim whatever the Input
pin voltage. When the current limiter is active,
the device operates in the linear region, so
power dissipation may exceed the capability of
the heatsink. Both case and junction
temperatures increase, and if this phase lasts
long enough, junction temperature may reach
the overtemperaturethresholdT
jsh
.
- OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION: these are based on sensing
the chip temperatureand are not dependent on
the input voltage. The location of the sensing
element on the chip in the power stage area
ensures fast, accurate detection of the junction
temperature. Overtemperaturecutout occursat
minimum 150
restarted when the chip temperature falls
below135
o
C. The device is automatically
o
C.
- STATUS FEEDBACK: In the case of an
overtemperature fault condition, a Status
Feedback is provided through the Input pin.
The internal protection circuit disconnects the
input from the gate and connects it instead to
ground via an equivalent resistance of 100 Ω.
The failure can be detected by monitoring the
voltage at the Input pin, which will be close to
ground potential.
Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit (with a smallincreasein R
DS(on)
).
4/11
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