SGS Thomson Microelectronics VNP35N07 Datasheet

VNP35N07

”OMNIFET”:

FULLY AUTOPROTECTED POWER MOSFET

TYPE V

VNP35N07 70 V 0.028 Ω 35 A

■ LINEARCURRENTLIMITATION

■ THERMALSHUT DOWN

■ SHORTCIRCUITPROTECTION

■ INTEGRATEDCLAMP

■ LOW CURRENTDRAWN FROM INPUT PIN

■ DIAGNOSTICFEEDBACK THROUGHINPUT

clamp

DS(on)

lim

■ ESDPROTECTION

■ DIRECTACCESS TO THE GATE OF THE

POWERMOSFET (ANALOG DRIVING)

■ COMPATIBLEWITH STANDARD POWER

MOSFET

■ STANDARD TO-220 PACKAGE

DESCRIPTION

The VNP35N07 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear

BLOCK DIAGRAM

TO-220

current limitation and overvoltage clamp protect the chip in harsh enviroments.

Faultfeedback can be detected by monitoringthe voltageat the input pin.

April 1996

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VNP35N07

ABSOLUTEMAXIMUM RATING

Symbol Parameter Value Unit

THERMAL DATA

thj-case

thj-amb

Drain-source Voltage (Vin= 0 ) Int er nall y Clamped V

Input Voltage 18 V

Drain Current Internally Limited A

Reverse DC Output Current -50 A

Elect r o st at ic Dis charge ( C= 100 pF, R= 1 . 5 KΩ) 2000 V

esd

Tot al Dissipation at Tc=25oC 125 W

tot

Oper at i ng Junct ion Temperat ure Internally Lim ited

Case Operating Temperature Internally Limited

St orage Temperature -55 t o 150

stg

Ther mal Resis t an ce Junction- case Max Ther mal Resis t an ce Junction- ambient Max

62.5

o o

C/W C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

OFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

CLAMP

Drain-source Clamp

ID= 200 mA Vin= 0 60 70 80 V

Volt age

CLTH

Drain-source Clamp

ID=2mA Vin=0 55 V

Thr eshold Volta ge

INCL

Input-Source Reverse

Iin=-1mA -1 -0.3 V

Clamp Voltage

DSS

ISS

Zer o I npu t V olt age Drain Current (V

Supply Current from

=0)

=13V Vin=0

=25V Vin=0

200

VDS=0V Vin= 10 V 250 500 µA

Input Pin

ON (∗)

Symbol Parameter Test Condition s Min. Typ. Max. Unit

IN(th)

Input Thres hold

VDS=VinID+Iin=1mA 0.8 3 V

Volt age

DS(on)

St at ic Drain-sourc e On Resistance

Vin=10V ID=18A

=5V ID=18A

0.028

0.035ΩΩ

DYNAMIC

µA µA

Symbol Parameter Test Condition s Min. Typ. Max. Unit

(∗)Forward

VDS=13V ID=18A 20 25 S

Tr ansc on ductance

Out put Capacit anc e VDS=13V f=1MHz Vin= 0 980 1400 pF

oss

2/11

VNP35N07

ELECTRICAL CHARACTERISTICS (continued) SWITCHING(∗∗)

Symbol Parameter Test Condition s Min. Typ. Max. Unit

d(on)

d(off)

d(on)

d(off)

(di/dt)

Turn-on Delay Time

Rise Time

Turn-off Delay T ime

Fall T ime

Turn-on Delay Time Rise Time

Turn-off Delay T ime

Fall T ime

Tur n-on Current Slope VDD=28V ID=18A

Total Input Charge VDD=12V ID=18A Vin= 10 V 100 n C

VDD=28V Id=18A

=10V R

gen

=10Ω

(see figure 3)

VDD=28V Id=18A V

=10V R

gen

= 1000 Ω

gen

(see figure 3)

=10V R

gen

=10Ω

SOURCE DRAIN DIODE

Symbol Parameter Test Condition s Min. Typ. Max. Unit

(∗)ForwardOnVoltage ISD=18A Vin=0 1.6 V

RRM

(∗∗)

Reverse Re covery Time Reverse Re covery Charge Reverse Re covery Current

= 18 A di/ dt = 100 A/µ s

=30V Tj=25oC

(see test cir cuit, figure 5)

100 350 650 200

500

2.7 10

4.3

200 600

1000

350 800

4.2 16

6.5

60 A /µs

250

1 8

ns ns ns ns

µs µs µs

µC

PROTECTION

Symbol Parameter Test Condition s Min. Typ. Max. Unit

dlim

jsh

lim

Drain Current Limit Vin=10V VDS=13V

=5V VDS=13V

(∗∗) Step Response

Current Lim it

Vin=10V

=5V

(∗∗) Ov er temperatu re

Shut dow n

(∗∗) Ov ert emperatur e Reset 135

jrs

(∗∗) Fault Sink Current Vin=10V VDS=13V

(∗∗) Single Puls e

Avalanche E nergy

(∗) Pulsed: Pulse duration = 300 µs, duty cycle1.5 % (∗∗) Parameters guaranteed by design/characterization

=5V VDS=13V

starting Tj=25oCVDD=20V

=10V R

=1KΩ L=10mH

gen

25 25

35 35

35 70

45 45

140

150

50 20

2.5 J

A A

µs µs

mA mA

3/11

VNP35N07

PROTECTION FEATURES

During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user’s standpoint is that a small DC current (I

) flows into the Input pin in order to

iss

supplythe internalcircuitry. The device integrates:

- OVERVOLTAGE CLAMP PROTECTION:

internally set at 70V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductiveloads.

- LINEAR CURRENT LIMITER CIRCUIT: limits

the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capabilityof the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperaturethresholdT

jsh

- OVERTEMPERATURE AND SHORT CIRCUIT

PROTECTION: these are based on sensing the chip temperatureand are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperaturecutout occurs at minimum 150 restarted when the chip temperature falls below135

C. The device is automatically

- STATUS FEEDBACK: In the case of an

overtemperature fault condition, a Status Feedback is provided through the Input pin. The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 Ω. The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential.

Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (witha small increase in R

DS(on)

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