SGS Thomson Microelectronics VNV28N04, VNP28N04FI, VNB28N04 Datasheet

VNP28N04FI



FULLY AUTOPROTECTED POWER MOSFET

TYPE V

VNP28N04FI
VNB28N04
VNV28N04

■ LINEAR CURRENT LIMITATION

■ THERMALSHUTDOWN

■ SHORT CIRCUIT PROTECTION

■ INTEGRATEDCLAMP

■ LOW CURRENT DRAWN FROM INPUT PIN

■ DIAGNOSTICFEEDBACKTHROUGH INPUT

clamp

42 V
42 V
42 V

PIN

■ ESD PROTECTION

■ DIRECT ACCESS TO THE GATE OF THE

POWERMOSFET(ANALOGDRIVING)

■ COMPATIBLEWITHSTANDARD POWER

MOSFET

DESCRIPTION

The VNP28N04FI, VNB28N04 and VNV28N04
are monolithic devices made using
STMicroelectronics VIPower M0 Technology,
intended for replacement of standard power
MOSFETS in DC to 50 KHz applications. Built-in
thermal shut-down, linear current limitation and
overvoltage clamp protect the chip in harsh

R

DS(on)

0.035 Ω

0.035 Ω

0.035 Ω

I

lim

28 A
28 A
28 A

VNB28N04/VNV28N04

”OMNIFET”:

ISOWATT220

3

1

D2PAK
TO-263

enviroments.
Faultfeedback can be detected by monitoring the

voltageat the input pin.

3

2

1

10

1

PowerSO-10

BLOCK DIAGRAM (∗)

(∗) PowerSO-10 PinConfiguration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB

June 1998

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VNP28N04FI-VNB28N04-VNV28N04

ABSOLUTEMAXIMUMRATING

Symbol Parameter Value Unit

V

V

V

P

T

Drain-source Voltage (Vin= 0 ) Int er nall y Clamped V

DS

Input Voltage 18 V

in

I

Drain Current Internally Limited A

D

I

Reverse DC Output Current -28 A

R

Elect r o st at ic Disc harge (C= 100 pF , R=1 . 5 KΩ) 2000 V

esd

Tot al Dissipat ion at Tc=25oC8334W

tot

T

Oper at i ng Junct ion Temper at ure Internally Limited

j

T

Case Operating Temperature Internally Limited

c

St orage Temperature -55 t o 150

stg

THERMAL DATA

R

thj-case

R

thj-amb

Ther mal Resist an ce Juncti on-c ase Max
Ther mal Resist an ce Juncti on-am b ient Max

Po w erSO-10

D2PAK

IS O WATT220 PowerSO -10 D2PA K

3.75

62.5

ISOWATT220

1.5
50

1.5

62.5

o
o

o

C

o

C

o

C

C/W
C/W

ELECTRICAL CHARACTERISTICS (-40 < Tj< 125oC unless otherwisespecified)
OFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

CLAMP

Drain-source Clamp

ID= 200 mA Vin= 0 34 42 51 V

Volt age

V

CLTH

Drain-source Clamp

ID=2mA Vin=0 31 V

Thr eshold Vol ta ge

V

INCL

Input-Source Reverse

Iin= -1 mA -1. 1 -0.1 V

Clamp Voltage

I

I

DSS

ISS

Zer o I npu t V olt ag e
Drain Current (V

in

Supply Current from

V

=13V Vin=0

=0)

DS

=25V Vin=0

V

DS

VDS=0V Vin= 10 V 250 6 00 µA

100
200

Input Pin

ON (∗)

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

R

DS(on)

IN(th)

Input Thres hold
Volt age

St at ic D r ain-source On
Resistance

VDS=VinID+Iin=1mA 0.8 3 V

Vin=10V ID=14A

=5V ID=14A

V

in

-40 < T
V
V
T

<25oC

j

=10V ID=14A

in

=5V ID=14A

in

= 125oC

j

0.035

0.05

0.07

0.1

µA
µA

Ω
Ω

Ω
Ω

2/13

VNP28N04FI-VNB28N04-VNV28N04

ELECTRICAL CHARACTERISTICS (continued)

DYNAMIC

Symbol Parameter Test Condition s Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on ductance

C

Out put Capacit anc e VDS=13V f=1MHz Vin= 0 700 1100 pF

oss

SWITCHING(**)

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

d(on)

t

d(off)

t

d(on)

t

d(off)

(di/dt)

Q

Turn-on Delay Time

t

Rise Time

r

Turn-off Delay Time

t

Fall T ime

f

Turn-on Delay Time

t

Rise Time

r

Turn-off Delay Time

t

Fall T ime

f

Tur n-on Current Slope VDD=15V ID=14A

on

Total Input Charge VDD=12V ID=10A Vin= 10 V 60 nC

i

VDS=13V ID=14A 9 18 S

VDD=15V Id=14A

=10V R

V

gen

gen

=10Ω

(see figure 3)

VDD=15V Id=14A

=10V R

V

gen

= 1000 Ω

gen

(see figure 3)

100
330
400
155

450

1.7

7.5

3.4

300
800
900
400

900

4
25
10

35 A/µs

=10V R

V

in

gen

=10Ω

ns
ns
ns
ns

ns

µs
µs
µs

SOURCE DRAIN DIODE

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

(∗)ForwardOnVoltage ISD=14A Vin=0 2 V

SD

t

rr

Reverse Re covery

(∗∗)

Time
Reverse Re covery

(∗∗)

Q

rr

I

= 14 A di/ dt = 10 0 A/µs

SD

=30V Tj=25oC

V

DD

(see test cir cuit, figure 5)

180

0.45

Charge

(∗∗)

I

RRM

Reverse Re covery

7

Current

PROTECTION

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

dlim

T

I

jsh

Drain Current Limit Vin=10V VDS=13V

lim

(∗∗) St ep Res ponse

Current Lim it

=5V VDS=13V

V

in

Vin=10V

=5V

V

in

(∗∗) Overtemperatu re

Shut dow n

(∗∗) O vertem per at u r e Reset 135

T

jrs

I

(∗∗) Fault Sink Current Vin=10V VDS=13V

gf

E

(∗∗) Single Pulse

as

Avalanche Energy

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(∗∗) Parameters guaranteed by design/characterization

V

=5V VDS=13V

in

starting Tj=25oCVDD=20V

=10V R

V

in

=1KΩ L=10mH

gen

19
19

28
28

25
70

41
41

40

120

150

50
20

2.5 J

ns

µC

A

A
A

µs
µs

o

C

o

C

mA
mA

3/13

VNP28N04FI-VNB28N04-VNV28N04

PROTECTION FEATURES

During normal operation, the Input pin is
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC to 50 KHz. The only difference
from the user’s standpoint is that a small DC
current (I

) flows into the Input pin in order to

iss

supplythe internalcircuitry.
The device integrates:

- OVERVOLTAGE CLAMP PROTECTION:

internally set at 42V, along with the rugged
avalanche characteristics of the Power
MOSFET stage give this device unrivalled
ruggedness and energy handling capability.
This feature is mainly important when driving
inductiveloads.

- LINEAR CURRENT LIMITER CIRCUIT: limits

the drain current Id to Ilim whatever the Input
pin voltage. When the current limiter is active,
the device operates in the linear region, so
power dissipation may exceed the capabilityof
the heatsink. Both case and junction
temperatures increase, and if this phase lasts
long enough, junction temperature may reach
the overtemperaturethreshold T

jsh

.

- OVERTEMPERATURE AND SHORT CIRCUIT

PROTECTION: these are based on sensing
the chip temperatureand are not dependent on
the input voltage. The location of the sensing
element on the chip in the power stage area
ensures fast, accurate detection of the junction
temperature. Overtemperaturecutout occurs at
minimum 150
restarted when the chip temperature falls
below135

o

C. The device is automatically

o

C.

- STATUS FEEDBACK: In the case of an

overtemperature fault condition, a Status
Feedback is provided through the Input pin.
The internal protection circuit disconnects the
input from the gate and connects it instead to
ground via an equivalent resistance of 100 Ω.
The failure can be detected by monitoring the
voltage at the Input pin, which will be close to
ground potential.

Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit (witha small increasein R

DS(on)

).

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