SGS Thomson Microelectronics VNV10N07, VNP10N07FI, VNB10N07 Datasheet

VNB10N07/K10N07FM

VNP10N07FI/VNV10N07

”OMNIFET”:

FULLY AUTOPROTECTED POWER MOSFET



June 1998

BLOCK DIAGRAM (∗)

TYPE V

clamp

R

DS(on)

I

lim

VNB10N07
VNK10N07FM
VNP10N07FI
VNV10N07

70 V
70 V
70 V
70 V

0.1 Ω

0.1 Ω

0.1 Ω

0.1 Ω

10 A
10 A
10 A
10 A

■ LINEAR CURRENT LIMITATION

■ THERMALSHUTDOWN

■ SHORTCIRCUIT PROTECTION

■ INTEGRATEDCLAMP

■ LOW CURRENT DRAWN FROM INPUT PIN

■ DIAGNOSTICFEEDBACK THROUGH INPUT

PIN

■ ESD PROTECTION

■ DIRECT ACCESS TO THE GATE OF THE

POWERMOSFET(ANALOGDRIVING)

■ COMPATIBLEWITHSTANDARD POWER

MOSFET

DESCRIPTION

The VNB10N07, VNK10N07FM, VNP10N07FI
and VNV10N07 are monolithic devices made
using STMicroelectronics VIPower M0
Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect

the chip in harsh enviroments.
Faultfeedback can be detected by monitoringthe

voltageat the input pin.

1

10

PowerSO-10

1

3

1

2

3

ISOWATT220

D2PAK
TO-263

SOT82-FM

(∗) PowerSO-10 PinConfiguration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB

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ABSOLUTEMAXIMUMRATING

Symbol Parameter Value Unit

PowerS O -10

D2PAK

SOT-82FM ISOWATT220

V

DS

Drain-source Voltage (Vin= 0 ) Internally C lam ped V

V

in

Input Voltage 18 V

I

D

Drain Current Inte r nally Limited A

I

R

Reverse DC Output Current -14 A

V

esd

Elect r os t at ic Discha rge (C= 100 pF,
R=1. 5 KΩ)

2000 V

P

tot

Tot al Dis sipa t ion at Tc=25oC509.531W

T

j

Oper at ing Junction T em perature Inte r nally Limited

o

C

T

c

Case Operating Temperature Internally Limited

o

C

T

stg

Sto rage Tem perat ure -55 to 150

o

C

THERMAL DATA

ISOWATT220 Po werSO-10 SOT82-FM D 2PAK

R

thj-case

Ther mal Resistance
Junct ion-case Max 4 2.5 13 2.5

o

C/W

R

thj-amb

Ther mal Resistance
Junct ion-ambie nt Max 62.5 50 100 62.5

o

C/W

ELECTRICAL CHARACTERISTICS (T

case

=25oC unlessotherwise specified)

OFF

Symbol Parameter Test Cond itions Mi n. Typ. Max. Unit

V

CLAMP

Drain-source Clamp
Volt age

ID= 200 mA Vin= 0 60 70 80 V

V

CLTH

Drain-source Clamp
Thr eshold V ol ta ge

ID=2mA Vin=0 55 V

V

INCL

Input-Source Reverse
Clamp Voltage

Iin=-1mA -1 -0.3 V

I

DSS

Zer o I npu t V olt age
Drain Current (V

in

=0)

V

DS

=13V Vin=0

V

DS

=25V Vin=0

50

200

µA
µA

I

ISS

Supply Current from
Input Pin

VDS=0V Vin= 10 V 250 500 µA

ON (∗)

Symbol Parameter Test Cond itions Mi n. Typ. Max. Unit

V

IN(th)

Input Thres hold
Volt age

VDS=VinID+Iin=1mA 0.8 3 V

R

DS(on)

St at ic Drain-s our ce On
Resistance

Vin=10V ID=5A
V

in

=5V ID=5A

0.1

0.14

Ω
Ω

VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07

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ELECTRICAL CHARACTERISTICS (continued)
DYNAMIC

Symbol Parameter Test Cond itions Mi n. Typ. Max. Unit

g

fs

(∗)Forward

Tr ansc on ductance

VDS=13V ID=5A 6 8 S

C

oss

Out put Capacit anc e VDS = 13 V f = 1 MH z Vin= 0 350 5 00 pF

SWITCHING(**)

Symbol Parameter Test Cond itions Mi n. Typ. Max. Unit

t

d(on)

t

r

t

d(off)

t

f

Turn-on Delay Time
Rise Time
Turn-off Delay T ime
Fall T ime

VDD=15V Id=5A
V

gen

=10V R

gen

=10Ω

(see figure 3)

50

80
230
100

100
160
400
180

ns
ns
ns
ns

t

d(on)

t

r

t

d(off)

t

f

Turn-on Delay Time
Rise Time
Turn-off Delay T ime
Fall T ime

VDD=15V Id=5A
V

gen

=10V R

gen

= 1000 Ω

(see figure 3)

600

0.9

3.8

1.7

900

2
6

2.5

ns

µs
µs
µs

(di/dt)

on

Tur n-on Current Slope VDD=15V ID=5A

V

in

=10V R

gen

=10Ω

60 A/µs

Q

i

Total Input Charge VDD=12V ID=5A Vin= 10 V 30 nC

SOURCE DRAIN DIODE

Symbol Parameter Test Cond itions Mi n. Typ. Max. Unit

V

SD

(∗)ForwardOnVoltage ISD=5A Vin=0 1.6 V

t

rr

(∗∗)

Q

rr

(∗∗)

I

RRM

(∗∗)

Reverse Re covery
Time
Reverse Re covery
Charge
Reverse Re covery
Current

I

SD

= 5 A di/dt = 100 A/µs

V

DD

=30V Tj=25oC

(see test cir cuit, figure 5)

125

0.3

4.8

ns

µC

A

PROTECTION

Symbol Parameter Test Cond itions Mi n. Typ. Max. Unit

I

lim

Drain Current Limit Vin=10V VDS=13V

V

in

=5V VDS=13V

7
7

10

10

14
14

A
A

t

dlim

(∗∗) St ep Response

Current Lim it

Vin=10V
V

in

=5V

20

50

30
80

µs
µs

T

jsh

(∗∗) Overt emperatu r e

Shut dow n

150

o

C

T

jrs

(∗∗) Overt emperature Reset 135

o

C

I

gf

(∗∗) Fault Sink Current Vin=10V VDS=13V

V

in

=5V VDS=13V

50

20

mA
mA

E

as

(∗∗) S i ngle Pulse

Avalanche Energy

starting Tj=25oCVDD=20V
V

in

=10V R

gen

=1KΩ L=10mH

0.4 J

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(∗∗) Parameters guaranteed by design/characterization

VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07

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During normal operation, the Input pin is
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC to 50 KHz. The only difference
from the user’s standpoint is that a small DC
current (I

iss

) flows into the Input pin in order to

supplythe internalcircuitry.
The device integrates:

- OVERVOLTAGE CLAMP PROTECTION:

internally set at 70V, along with the rugged
avalanche characteristics of the Power
MOSFET stage give this device unrivalled
ruggedness and energy handling capability.
This feature is mainly important when driving
inductiveloads.

- LINEAR CURRENT LIMITER CIRCUIT: limits

the drain current Id to Ilim whatever the Input
pin voltage. When the current limiter is active,
the device operates in the linear region, so
power dissipation may exceed the capabilityof
the heatsink. Both case and junction
temperatures increase, and if this phase lasts
long enough, junction temperature may reach
the overtemperaturethresholdT

jsh

.

- OVERTEMPERATURE AND SHORT CIRCUIT

PROTECTION: these are based on sensing
the chip temperatureand are not dependent on
the input voltage. The location of the sensing
element on the chip in the power stage area
ensures fast, accurate detection of the junction
temperature. Overtemperaturecutout occurs at
minimum 150

o

C. The device is automatically
restarted when the chip temperature falls
below135

o

C.

- STATUS FEEDBACK: In the case of an

overtemperature fault condition, a Status
Feedback is provided through the Input pin.
The internal protection circuit disconnects the
input from the gate and connects it instead to
ground via an equivalent resistance of 100 Ω.
The failure can be detected by monitoring the
voltage at the Input pin, which will be close to
ground potential.

Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit (with a small increase in R

DS(on)

).

PROTECTION FEATURES

VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07

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Thermal ImpedanceFor ISOWATT220

Derating Curve

Transconductance

ThermalImpedanceFor D2PAK / PowerSO-10

OutputCharacteristics

StaticDrain-SourceOnResistancevs Input
Voltage

VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07

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