SGS Thomson Microelectronics VNH100N04 Datasheet

VNH100N04
”OMNIFET”:
FULLY AUTOPROTECTED POWER MOSFET
TARGET DATA
September 1994
BLOCK DIAGRAM
TYPE V
clamp
DS(on)
I
lim
VNH100 N04 42 V 0.012 100 A
LINEAR CURRENT LIMITATION
THERMAL SHUT DOWN
SHORT CIRCUIT PROTECTION
INTEGRATED CLAMP
LOW CURRENT DRAWN FROM INPUT PIN
DIAGNOSTIC FEEDBACKTHROUGH INPUT
PIN
ESD PROTECTION
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
COMPATIBLE WITH STANDARD POWER
MOSFET
STANDARD TO-218 PACKAGE
DESCRIPTION
The VNH100N04 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Buit-in thermal shut-down, linear
current limitation and overvoltage clamp protect the chip in harsh enviroments.
Fault feedback can be detected by monitoring the voltage at the input pin.
TO-218
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ABSOLUTE MAXIMUM RATING
Symb o l Parameter Val u e Unit
V
DS
Drain - source Voltage (Vin= 0) Inte r nally Clamp ed V
V
in
Input Voltage 18 V
I
D
Drain C ur rent Inte r nally Limit ed A
I
R
Reverse DC O utput Current -50 A
V
esd
Electrost at ic D is c h ar ge (C= 100 p F , R=1. 5 K) 2000 V
P
tot
Total Dissipation at Tc=25oC208W
T
j
Oper at ing Junction Temperat ure Inte r nally Limit ed
o
C
T
c
Case Operating Temperature Internally Limited
o
C
T
stg
St orage Temperature -55 to 150
o
C
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junc tion-c as e Max Thermal Resistance Junction- ambient Max
0.6 30
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
=25oC unless otherwise specified)
OFF
Symbol Parameter Test Condi tions Min. Typ. Max. Unit
V
CLAMP
Drain - source Clamp Volt age
ID=30A Vin= 0 36 42 48 V
V
CLTH
Drain - source Clamp Thr e s hold Voltage
ID=2mA Vin=0 35 V
V
INCL
Input-Source Rev ers e Clam p V oltage
Iin=-1mA -1 -0.3 V
I
DSS
Zero Input V oltage Drain C ur rent (V
in
=0)
V
DS
=13V
V
DS
=25V
50
200
µA µA
I
ISS
Supply Current f rom Input Pin
VDS=0V Vin= 10 V 250 500 µ A
ON ()
Symbol Parameter Test Condi tions Min. Typ. Max. Unit
V
IS(th)
Input Threshold Volt age
VDS=VinID=1mA 0.8 3 V
R
DS(on)
St at ic Dr ain- source On Resistance
Vin=10V ID=30A V
in
=5V ID=30A
0.012
0.015ΩΩ
DYNAMIC
Symbol Parameter Test Condi tions Min. Typ. Max. Unit
g
fs
()Forward
Tr ansconduct anc e
VDS=13V ID=30A 40 S
C
oss
Out put Cap ac itance VDS=13V f=1MHz Vin= 0 1800 3000 pF
VNH100N04
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ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symbol Parameter Test Condi tions Min. Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time Rise Time Tur n - of f Delay Time Fall Time
VDD=15V Id=30A V
gen
=10V R
gen
=10
(see figure 3)
100 400 900 400
TBD TBD TBD TBD
ns ns ns ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time Rise Time Tur n - of f Delay Time Fall Time
VDD=15V Id=30A V
gen
=10V R
gen
=10
T
j
=125oC
(see figure 3)
TBD TBD TBD TBD
ns ns ns ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time Rise Time Tur n - of f Delay Time Fall Time
VDD=15V Id=30A V
gen
=10V R
gen
=1000
(see figure 3)
TBD TBD TBD TBD
µs µs µs µs
(di/dt)
on
Turn-on Current S lope VDD=15V ID=30A
Vin=10V
TBD A/µs
Q
g
Total Gate Charge VDD=12V ID=30A Vin=10V TBD nC
SOURCE DRAIN DIODE
Symbol Parameter Test Condi tions Min. Typ. Max. Unit
V
SD
(∗) Forward O n Voltage ISD=30A Vin=0 TBD V
t
rr
Q
rr
I
RRM
Reverse Recover y Time Reverse Recover y Charge Reverse Recover y Current
ISD= 30 A di/dt = 100 A/µs VDD=V Tj= 150oC (see test circuit, figure 5)
TBD TBD TBD
ns
µC
A
PROTECTION
Symbol Parameter Test Condi tions Min. Typ. Max. Unit
I
lim
Drain C ur rent Limit Vin=10V VDS= 13 V 70 100 140 A
t
dlim
St ep Response Current Limit
Vin=10V VDS=13V TBD µs
T
jsh
Overtemperature Shut down
150 170 190
o
C
T
jrs
Ove rtempe rature Rese t 135
o
C
I
gf
Fault Sink Cu r rent Vin=10V VDS=13V 50 mA
E
as
Single Pulse Avalanc he Ener gy
starting Tj=25oCVDD=20V Vin=10V R
gen
=1KΩ L= mH
TBD J
(∗) Puls ed: Pulse dur ation = 300 µs, duty cycle 1.5 %
VNH100N04
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