SGS Thomson Microelectronics VB927FI, VB927 Datasheet
VB927
HIGH VOLTAGE IGNITION COIL DRIVER
■ NO EXTERNALCOMPONENT REQUIRED
■ INTEGRATEDHIGH VOLTAGECLAMP
■ COILCURRENT LIMITINTERNALLYSET
■ HIGH RUGGEDNESS
DESCRIPTION
The VB927 is a monolithichigh voltage integrated
circuit made using STM VIPower Technology,
which combines a vertical current flow power
trilinton with a coil current limiting circuit and a
collectorvoltage clamping.
The device is peculiarly suitable for application in
high performance electronic car ignition, where
coil current limitation and voltage clamping are
required.
VB927FI
POWER IC
3
2
1
TO-247 ISOWATT5
BLOCK DIAGRAM
June 1998
1/5
VB927
ABSOLUTEMAXIMUM RATING
Symbol Parameter Value Unit
VB927 VB927FI
HV
V
P
T
THERMAL DATA
R
thj-case
R
thj-amb
Collector Voltage Internally Limited V
c
Maximum Input Voltage 15 V
in
Collector Current Internally Limited A
I
c
Input Cur ren t Internally Limited mA
I
in
Tot al Diss ipation at Tc=25oC 150 70 W
tot
St orage Tem per atur e -40 t o150
stg
Oper at i ng Junction Temper at ure -40 to150
T
j
TO-247 ISOWATT5 Unit
Ther mal R es istance J unction-cas e Max 0.6 2
Ther mal Resis t an ce Junction- ambient Max 30
o
o
o
C
o
C
C/W
C/W
ELECTRICAL CHARACTERISTICS (V
=14 V, -40 < Tj<125oC unlessotherwise specified)
batt
Symbol Parameter Test Conditions Min. Typ. Max. Un it
I
leak
Collector Cut-off
Vin=0 HVc=250V 250 µA
Current
* Clamping Voltage -40 < Tj< 125oC 380 420 490 V
V
cl
V
cg(sat)
I
cl
I
V
f
V
in(h)
V
in(l)
V
n(hyst)
t
d(off)
T
Power S tage
Saturation Voltage
Ic=5A Iin= 10mA 25 ≤ Tj≤ 125oC
=6A Iin= 10mA -40 ≤ Tj≤ 25oC
I
c
* Coil Current Limit Vin=5V -40≤Tj≤125oC8.5 9.5A
Input Cur ren t Vin=5V Ic=5A
in
=5V Ic=5A Tj=25oC3
V
in
** Diode For ward V oltage If=10A Tj=25oC1.22.23.2V
Input Volt a ge (O N) On state input threshold 3.2 3.6 V
Input Volt a ge (O F F) Of f state input thr eshold 3 3.4 V
Input Voltage (Hyst.) 0.2 0.6 V
Turn-off Time Ic = 5 A 30 µs
Junction Temper at ur e
j
See n ot e1 150
2.5
3
10
10
V
V
mA
mA
o
C
Limit
* Coil data:primary resistance Rc= 0.4 - 0.8 Ω, primary inductance Lc=6-8mH
** Pulsed: Pulse duration = 300µs, duty cycle 1.5 %
Note1 : T
temperature, thethermal protection circuit will begin its action reducing the I
a functionof the R
min = 150oC means that the behaviour of the devicewill not be affected for junction temperature lower then 150oC . For higher
j
of the whole systemin which the device with be operating.
th
limit according with the power dissipation. Chip temperature is
cl
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