SGS Thomson Microelectronics VB027BSP Datasheet



VB027BSP

HIGH VOLTAGE IGNITION COIL DRIVER

POWER I.C.

TYPE V

VB027BSP 320V 10.5A 160mA

■ PRIMARY COIL VOLTAGE INTERNALLY SET

■ COIL CURRENT LIMIT INTERNALLY SET

■ LOGIC LEVELCOMPATIBLEINPUT

■ DRIVING CURRENT QUASI PROPORTIONAL

cl

I

cl

I

d(on)

TO COLLECTOR CURRENT

■ DOUBLE FLAG-ON COIL CURRENT

DESCRIPTION

The VB027BSP isa high voltage power integrated
circuit made using the STMicroelectronics
VIPower technology, with vertical current flow
power darlington and logic level compatible
driving circuit. Built-in protection circuit for coil
current limiting and collector voltage clamping
allows the device to be used as smart, high

BLOCK DIAGRAM

V

d

10

1

PowerSO-10

voltage, high current interface in advanced
electronic ignition system.

HV

C

INPUT

OVERTEMP.

PROTECTION

FLAG 1

FLAG

June 1999 1/7

FLAG 2

+

-

-

+

DRIVER

QUASI PROP.
BASE CURRENT

REFERENCE

R

SENSE

VB027BSP

ABSOLUTE MAXIMUM RATING

Symbol Parameter Value Unit

HV

I

V

I

V

T

T

THERMAL DATA

Symbol Parameter Value Unit

R

thj-case

R

thj-amb

CONNECTION DIAGRAM (TOP VIEW)

Collector voltage Internally limited V

c

Collector current Internally limited A

C

Driving stage supply voltage 7 V

d

Driving circuitry supply current 200 mA

d

Input voltage 10 V

IN

Junction operating temperature -40 to 150 °C

j

Storage temperature -55 to 150 °C

stg

Thermal resistance junction-case (MAX) 1.12 °C/W
Thermal resistance junction-ambient (MAX) 62.5 °C/W

GND
V

d

N.C.
INPUT
DIAG

HV

6
7

8
9

10

11

C

5
4
3

2
1

PIN FUNCTION

No Name Function

1÷5 GND Emitter power ground

6(*) GND Control ground

7V

d

8 N.C.
9 INPUT Logic input channel

10 DIAG Diagnostic output signal (whenI

TAB HV

(*) Pin 1÷5=Power GND, Pin 6=signal GND. Pin 6 must be connected to pins 1÷5 externally.

C

Driving stage supply voltage

Primary coil output signal

GND
GND
GND
GND
GND

is greaterthan 3A)

C

2/7

1

VB027BSP

ELECTRICAL CHARACTERISTICS (V

specified)

=13.5V; Vd=5V; Tj=25ºC; R

CC

coil

=510m

Ω;

L

=7mH unless otherwise

coil

Symbol Parameter Test Conditions Min Typ Max Unit

V

V

cg(sat)

I

d(off)

I

d(on)

V

I

I

cl(td)

I

leak

V

INH

V

INL

I

INH

V

diagH

V

diagL

I

C(diag1)

High voltage clamp -40°C≤Tj≤125°C; IC=6A 320 420 V

cl

Power stage saturation
voltage

IC=6A; VIN=4V; -40°C≤Tj≤125°C2V

Power-off supply current VIN=0.4V 11 mA
Power-on supply current VIN=4V; IC=6A; -40°C≤Tj≤125°C 160 mA
Driving stage supply

d

voltage
Collector current limit VIN=4V 8.5 10.5 A

cl

Collector current limit drift
with temperature

See figure 3

4.5 5.5 V

Collector leakage current Vc=125V 100 µA
High level input voltage 4 5.5 V
Low level input voltage 0 0.8 V
High level input current 200 µA
High level diagnostic

output voltage
Low level diagnostic

output voltage
First threshold level

collector current

R

=15K

Ω;

C

EXT

R

=22K

EXT

=1nF (See figure 1) 3.5 V

EXT

Ω;

C

=1nF (See figure 1) 0.5 V

EXT

4.25 4.5 4.75 A

d

First threshold level

I

C(diag1)td

I

C(diag2)

collector current drift with
temperature

Second threshold level
collector current

See figure 4

5.45 5.8 6.15 A

Second threshold level

I

C(diag2)td

I

diagH

t

d(off)

t

f(off)

E

T

T

hys

V

collector current drift with

See figure 5

temperature
Overtemperature

diagnostic current
Turn-off delay time of

output current
Turn-off fall time of output

current
Single pulse avalanche

s/b

energy
Temperatureofdiagnostic

int

shift

IC=6A 5 25 45 µs

IC=6A 2 8 15 µs

22.63.2A

300 mJ

130 150 170 °C

Thermal hysteresis 30 °C
Diode forward voltage IC= -10A 3 V

f

V

3/7

1