Datasheet VB025BSP Datasheet (SGS Thomson Microelectronics)

VB025BSP
HIGH VOLTAGE IGNITION COIL DRIVER
POWER IC
TYPE V
VB025BSP 380 V 9 A 100 m A
PRIMARYCOIL VOLTAGEINTERNALLY SET
COIL CURRENT LIMIT INTERNALLYSET
LOGICLEVEL COMPATIBLE INPUT
DRIVINGCURRENT QUASI
cl
I
cl
I
d
PROPORTIONALTO COLLECTOR CURRENT
SINGLE FLAG-ONCOILCURRENT
DESCRIPTION
The VB025BSPis a high voltage powerintegrated circuit made using STMicroelectronics VIPower Technology, with vertical current flow power darlingtonandlogiclevelcompatibledrivingcircuit.
Built-in protection circuits for coil current limiting and collector voltage clamping allows the VB025BSP to be used as a smart, high voltage, high current interface in advanced electronic ignition systems.
BLOCK DIAGRAM
10
1
PowerSO-10
March 1999
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VB025BSP
ABSOLUTEMAXIMUMRATING
Symbol Para met e r Val u e Uni t
HV
I
I
C(gnd)
V
I
I
s(gnd)
V
I f
V
out(flag)
I
out(flag)
P
max
E
V
ESD
V
ESD
I
BD
V
T
T
() With10 mils Alwire
Collec t or Voltage ( I nternally Limi t ed ) -0. 3 t o V
C
Collec t or Current (I n t ernally Li m ited) 10 A
C
clamp
DC C ur rent on Emitter Powe r ± 10.5 ()A Driving Stage Supply V oltage -0.3 to 7 V
CC
Driving C ir c uit r y Supply Current ± 200 mA
s
DC C ur rent on Groun d P in ± 1A Input V o lt age -0. 3 t o VCC+0.3 V
in
Maximum In put C urrent 100 mA
in
Logic In put Fr eque nc y in O perative Mod e DC to 150 Hz
in
Out put Volta ge Prima r y Threshold Cur rent Level -0. 3 t o VCC+0.3 V Flag Out put Cu rr ent 100 m A Power Dissi pation (TC= 105oC) TB D W Clampe d Ene r gy D ur in g Out put Power Clamping 300 mJ
s/b
ESD Voltage (HVC Pin) ± 4KV ESD Vo lt age (O t he r Pins) ± 2KV Input Darlington Base C ur re nt 150 m A Input Darlington Base Voltage Int er na lly Limit ed V
BD
Oper ating Junction Te mperature -40 to 150
j
St orage Temperatur e Range -55 to 150
stg
V
o
C
o
C
THERMALDATA
R
thj-case
R
thj-h
T
sold
() see application note AN515/1094on VIPower data-book 1stedition.
Ther mal Res is tance Junct ion Case (MAX ) 1.2 Ther mal Res is tance Junct ion Heat sink w it h FR4 (MAX ) TB D () Lead Temp er a t ure During Sold er in g (MAX ) TB D ()
o
C/W
o
C/W
o
C
2/7
CONNECTIONDIAGRAM
PIN FUNCTION
No NAME FUNCTION
1-5 GND Emitter Po wer Ground
6 G ND Control Groun d (* ) 7V
CC
8 BD Base Da rlington 9 I NP U T Logic I nput Channel ( I ntern al Pul l Dow n)
10 FLAG Diagnos t ic O u t put S igna l (Op en E mit t er)
TAB HVC Pr ima r y Coil Output Driver (Open C oll ector)
(*) Pin 6 must beconnected to pins1-5 externally
Logic S up ply V oltage
VB025BSP
ELECTRICAL CHARACTERISTICS (5.3V <Vb< 24V;VCC=5V±10%; -40oC<Tj<125oC;
R
=580 m;L
coil
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
V
V
ce(sat)
High Voltage Clamp I
cl
Saturation Voltage of The Power Stage
I
CC(stdby)
I
CC
I
CC(peak)
Stand -by Sup ply Current IN = OFF 10 mA DC L ogic C ur rent Vb=16V Ic=6.5A f=100Hz
Peak DC Logic Cur re nt During O n P hase
V
I
I
C(leak)
I
C(in fl)
DC Logic Voltage 4.5 5.5 V
CC
Coil Curr e nt Lim i t -40oC<Tj<125oC
cl
Outp ut leakage Curr e nt IN = OFF V Collect or Current with
Float ing Input
T
Ic_ctr
Therm al Tem peratu r e Outp ut Cur rent Control
V
V
High Level Input Volt a ge VCC=4.5V 4 V
inH
Low Level Input V ol t age VCC=5.5V -0.3 0.8 V
inL
= 3.75 mH; unless otherwisespecified; seenote 1)
coil
= 6.5 A 320 380 420 V
coil
Ic=7.5A; Vin=4V TBD V
Load = C oil V
CC
=5.5V
Ic=7.5A (seefigure1) TBD mA
(see not e 2 and figure 1)
= 24V 0.8 mA
HVC
VCC= 5 V VBat = 13.5 V
=1KΩ; I np ut F loati ng
R
LOAD
OUT = ON (see fig ure 2 ) 150 (*)
40 mA
911A
0.8 mA
CC
o
C
V
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VB025BSP
ELECTRICAL CHARACTERISTICS (continued)
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
V
in(hys)
I
inH
I
inL
I
inpd
V
diagH
V
diagL
I
diagTH
I
diagTD
I
diag
I
diag(leak)
V
E
t
pHL
t
pLH
Note 1: Parametricdegradation are allowed with 5.3 < Vb< 10V and Vb> 24V. Note 2: Theprimary coil current value I Note 3: No Internal Pull-Down (*) Internally limited
Input T hresho ld
0.4 V
Hysteresis High Level Input Curre nt Vin= 4 V 100 µ A Low Level Input Cur rent Vin=0.8V -100 µA
Input A ctive Pull-Down Vin= 4 V 10 100 µA High Level Flag Outpu t
Voltage Low Level Flag O utput
Voltage Coil Curr e nt Lev e l
=22KΩ C
R
EXT
EXT
=1nF
(see not e 3)
=22KΩ C
R
EXT
EXT
=1nF
(see not e 3) Tj=25oC (see figure 1) 4.25 4.5 4.75 A
V
-1 V
CC
Threshold Coil Curr e nt Lev e l
(see figure 3)
Threshold Drift High Level Flag Outpu t
IC>I
diagTH
V
=3V 0.5 TBD mA
diag
Current Leakage Cu rrent O n Fla g
Vin=LOW VCC= 5.5V 10 µA
Output Antiparallel Diode
F
Ic=-1A 2 V
Forward Voltage Single P u ls e Ava lanche
s/b
Energy Turn-o n Delay Tim e of
Coil Curre nt Turn-off Delay Time of
Coil Curre nt
must bemeasured 1ms after desaturation of the power stage.
cl
L=6mH IC=8A (see figure 4)
=0.5Lc=3.75mH
R
c
(see figure 5)
=0.5Lc=3.75mH Ic=6.5A
R
c
(see figure 5)
180 mJ
TBD µs
TBD µs
CC
0.5 V
V
PRINCIPLEOF OPERATION
The VB025BSP is mainly intended as a high voltage power switch device driven by a logic level input and interfacesdirectly to a high energy electronicignition coil. The input Vin of the VB025BSPis fed from a low power signal generated by an external controller that determinesboth dwell time and ignitionpoint.
During Vin high (4V) the VB025BSP increases current in the coil to the desired, internally set current level. After reaching this level, the coil current remains constant until the ignition point, that corresponds to the transition of Vin from high to low (typ. 1.9V threshold).
During the coil current switch-off, the primary
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voltage HVc is clamped at an internally set value Vcl, typically380V. The transition fromsaturation to desaturation,coil current limiting phase, must have the ability to accomodate an overvoltage. A maximum overshootof 20V is allowed.
FEEDBACK
When the collector current exceeds 4.5A, the feedback signal is turned high and it remains so, until the input voltage is turned-off.
OVERVOLTAGE
The VB025BSP can withstand the following transientsof the batteryline:
-100V/2msec(R +100V/0.2msec(R +50V/400msec(R
=10Ω)
i
=10Ω)
i
= 4.2 ,with VIN=3V)
i
VB025BSP
Fig. 1 Main WaveformsDuring On Phase Fig. 2 OutputCurrent Waveform After Thermal
ProtectionActivation
FIG.4 Single Pulse Typical Es/bCurveFig. 3 FlagCurrent Versus Temperature
FIG. 5 PropagationTimes Definitions.
200 V
50 %
10 %
tt
pHL pLH
HVC
INPUT
10 %
SC10930
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VB025BSP
PowerSO-10MECHANICAL DATA
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 3.35 3.65 0.132 0.144
A1 0.00 0.10 0.000 0.004
B 0.40 0.60 0.016 0.024
c 0.35 0.55 0.013 0.022
D 9.40 9.60 0.370 0.378
D1 7.40 7.60 0.291 0.300
E 9.30 9.50 0.366 0.374 E1 7.20 7.40 0.283 0.291 E2 7.20 7.60 0.283 0.300 E3 6.10 6.35 0.240 0.250 E4 5.90 6.10 0.232 0.240
e 1.27 0.050
F 1.25 1.35 0.049 0.053
H 13.80 14.40 0.543 0.567
h 0.50 0.002
L 1.20 1.80 0.047 0.071
q 1.70 0.067
α 0
o
o
8
==
==
HE
h
A
F
A1
610
51
eB
M
0.25
D
==
D1
==
DETAIL”A”
E2
==
DETAIL”A”
Q
B
0.10 A
E1E3
==
SEATING PLANE
A
C
α
B
E4
==
SEATING
PLANE
A1
L
==
0068039-C
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VB025BSP
Information furnished isbelieved tobeaccurate and reliable. However, STMicroelectronics assumes noresponsibility for theconsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patentrights of STMicroelectronics. Specification mentioned in this publication are subject tochange without notice. Thispublication supersedes and replaces allinformation previously supplied. STMicroelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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