SGS Thomson Microelectronics TYN812T, TYN812, TYN1012, TYN1012T, TYN612T Datasheet

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TN12, TS12 and TYNx12 Series
SENSITIVE & STANDARD 12A SCRs
September 2000 - Ed: 3
MAIN FEATURES:
DESCRIPTION
Symbol Value Unit
I
T(RMS)
12 A
V
DRM/VRRM
600 to 1000 V
I
GT
0.2 to 15 mA
ABSOLUTE RATINGS(limiting values)
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current (180° conduction angle)
Tc = 105°C12
A
IT
(AV)
Averageon-state current (180° conduction angle)
Tc = 105°C8
A
DPAK /
IPAK
D
PAK /
TO-220AB
I
TSM
Non repetitive surge peak on-state current
tp = 8.3 ms
Tj = 25°C
115 146
A
tp = 10 ms 110 140
I tI
t Value for fusing
tp = 10 ms Tj = 25°C60 98
A
S
dI/dt
Critical rate of rise of on-state current I
G
=2xIGT,tr≤100 ns
F = 60 Hz Tj = 125°C50A/µs
I
GM
Peak gate current tp = 20 µs Tj = 125°C4 A
P
G(AV)
Averagegate power dissipation Tj = 125°C1 W
T
stg
Tj
Storage junction temperature range Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
V
RGM
Maximum peak reversegate voltage (for TN12 & TYN) 5 V
G
A
K
A
A
K
G
DPAK (TS12-B) (TN12-B)
A
A
G
K
A
A
K
G
G
A
A
K
D2PAK
(TN12-G)
IPAK (TS12-H) (TN12-H)
TO-220AB
(TYN)
TN12, TS12 and TYNx12 Series
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ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
SENSITIVE
STANDARD
THERMAL RESISTANCES
S = Copper surface under tab
Symbol Test Conditions TS1220 Unit
I
GT
VD=12V RL= 140
MAX. 200
µA
V
GT
MAX. 0.8 V
V
GD
VD=V
DRMRL
= 3.3 kRGK=1k
Tj = 125°C MIN.
0.1 V
V
RG
IRG=10µA
MIN.
8V
I
H
I
T
=50mA RGK=1k
MAX. 5 mA
I
L
IG= 1 mA RGK=1k
MAX. 6 mA
dV/dt
V
D
=67%V
DRMRGK
= 220
Tj = 125°C MIN. 5 V/µs
V
TM
ITM= 24 A tp = 380 µs
Tj = 25°C MAX. 1.6 V
V
t0
Threshold voltage Tj = 125°C MAX. 0.85 V
R
d
Dynamic resistance Tj = 125°CMAX. 30 m
I
DRM
I
RRM
V
DRM=VRRM
RGK= 220
Tj = 25°CMAX. 5 µA
Tj = 125°C2mA
Symbol Test Conditions
TN1215 TYN
Unit
B/H G x12T x12
I
GT
VD=12V RL=33
MIN. 2 0.5 2 mA
MAX. 15 5 15
V
GT
MAX. 1.3 V
V
GD
VD=V
DRMRL
= 3.3 k
Tj = 125°C MIN.
0.2 V
I
H
IT= 500 mA Gate open
MAX.40301530 mA
I
L
I
G
= 1.2 I
GT
MAX.
80 60 30 60
mA
dV/dt V
D
=67%V
DRM
Gate open
Tj = 125°C MIN. 200 40 200 V/µs
V
TM
ITM= 24A tp= 380 µs
Tj = 25°C
MAX.
1.6
V
V
t0
Threshold voltage Tj = 125°C
MAX.
0.85
V
R
d
Dynamic resistance Tj = 125°C
MAX.
30
m
I
DRM
I
RRM
V
DRM=VRRM
Tj = 25°C MAX. 5 µA
Tj = 125°C2
mA
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (DC)
1.3
°C/W
R
th(j-a)
Junction to ambient TO-220AB 60 °C/W
IPAK 100
S=1cm
D PAK
45
S = 0.5 cm
DPAK 70
TN12, TS12 and TYNx12 Series
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PRODUCT SELECTOR
ORDERING INFORMATION
Part Number
Voltage (xxx)
Sensitivity
Package
600 V 700 V 800 V 1000 V
TN1215-xxxB X X 15 mA DPAK TN1215-xxxG X X X 15 mA
D
PAK TN1215-xxxH X X 15 mA IPAK TS1220-xxxB X X 0.2 mA DPAK TS1220-xxxH X X 0.2 mA IPAK TYNx12 X X X 30 mA TO-220AB TYNx12T X X X 15 mA TO-220AB
TN 12 15 - 600 B (-TR)
STANDARD SCR SERIES
CURRENT: 12A
SENSITIVITY: 15: 15mA
VOLTAGE:
600: 600V 800: 800V
1000: 1000V
PACKAGE: B: DPAK H: IPAK G: D PAK
2
PACKING MODE: Blank:Tube
-TR: D PAK& DPAK Tape& Reel
2
TS 12 20 - 600 B (-TR)
SENSITIVE SCR SERIES
CURRENT:12A
SENSITIVITY: 20: 200µA
VOLTAGE: 600: 600V 700: 700V
PACKAGE: B: DPAK H: IPAK
PACKING MODE: Blank:Tube
-TR: DPAKTape & Reel
TYN 6 12 T
STANDARD SCR SERIES
CURRENT:12A
SENSITIVITY: Blank: 30mA T:15mA
VOLTAGE:
600: 600V 800: 800V
1000: 1000V
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