SGS Thomson Microelectronics TYN810, TYN1010, TYN610, TYN410, TYN210 Datasheet
®
FEATURES
High surge capability
■
High on-state current
■
High stability and reliability
■
DESCRIPTION
The TYN210 ---> TYN1010 Family of Silicon
Controlled Rectifiers uses a high performance
glass passivated technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
TYN210 ---> TYN1010
SCR
A
G
K
K
A
G
TO-220AB
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
I
T(AV)
I
TSM
2
I
dI/dt Critical rate of rise of on-state current
Tstg
Tj
Tl Maximum lead soldering temperature during 10s at 4.5mm from case 260 °C
Symbol Parameter
V
DRM
V
RRM
RMS on-state current (180° conduction angle) Tc = 100°C 10 A
Average on-state current
Tc = 100°C 6.4 A
(180° conduction angle, single phase circuit)
Non repetitive surge peak on-state current
(Tj initial = 25°C)
tI
2
t value tp = 10ms 50 A2s
Gate supply: I
= 100mA dIG/dt = 1A/µs
G
tp = 8.3ms 105 A
tp = 10ms 100
Storage and operating junction temperature range -40 to +150
-40 to +125
TYN
210 410 610 810 1010
Repetitive peak off-state voltage
200 400 600 800 1000 V
Tj = 125°C
50 A/µs
°C
Unit
September 2001 - Ed: 1A
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TYN210 ---> TYN1010
THERMAL RESISTANCE
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC 2.5 °C/W
GATE CHARACTERISTICS (maximum values)
P
ELECTRICAL CHARACTERISTICS
=1W PGM= 10W (tp = 20µs) I
G(AV)
= 4A (tp = 20µs) V
FGM
RGM
=5V
Symbol Test conditions Value Unit
I
GT
V
GT
V
GD
tgt VD=V
I
I
V
TM
I
DRM
I
RRM
VD= 12V (DC) RL=33Ω Tj = 25°C MAX. 15 mA
VD= 12V (DC) RL=33Ω Tj = 25°C MAX. 1.5 V
VD=V
DRM
DRMIG
dI
/dt = 0.5A/µs
G
IG= 1.2I
L
IT= 100mA Gate open Tj = 25°C MAX. 30 mA
H
GT
RL= 3.3kΩ Tj =110°C MIN. 0.2 V
= 40mA
ITM= 20A tp = 380µs Tj = 25°C MAX. 1.6 V
V
rated
DRM
V
rated
RRM
dV/dt Linear slope up to
tq V
VD= 67% V
=67%V
D
dI
/dt=30 A/µsdVD/dt= 50V/µs
TM
gate open
DRM
DRMITM
= 20A VR= 25V
Fig. 1: Maximum average power dissipation versus average on-state current.
P(W)
12
10
8
6
4
2
0
0123456789
360
O
DC
o
=180
o
=120
o
=90
o
=60
=30
o
I(A)
T(AV)
Tj = 25°C TYP. 2 µs
Tj = 25°C TYP. 50 mA
Tj = 25°C MAX. 0.01 mA
Tj = 110°C MAX. 2
Tj = 110°C MIN. 200 V/µs
Tj = 110°C TYP. 70 µs
Fig. 2: Correlation between maximum average
power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal
resistances heatsink + contact.
P (W) Tcase ( C)
12
10
8
6
4
2
0
0 20406080100120140
= 180
o
o
Tamb ( C)
o
Rth = 0 C/W
o
2C/W
o
4C/W
o
6C/W
o
-100
-105
-110
-115
-120
-125
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