SGS Thomson Microelectronics TSM108IDT, TSM108, TSM108ID Datasheet
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■ CURRENT MEASUREMENT ON OUTPUT
POSITIVE LI NE
■ CONSTANT VOLTAGE MODE CONTROL
■ CONSTANT CURRENT MODE CONTROL
■ PRECISION VOLTAGE AND CURRENT
CONTROL LOOPS
■ ADJUSTABLE SWITCHING FREQUENCY
■ ADJUSTABLE OVER VOLTAGE LOCKOUT
■ ADJUSTABLE UNDER VOLTAGE LOCKOUT
■ STANDBY MO D E (L OW QUIESCE NT
CURRENT)
■ SUSTAINS 60V
■ MINIMAL EXTERNAL COMPONENTS
COUNT
■ DRIVING ABILITY FOR EITHER P-MOSFET
OR PNP TRANSISTORS
DESCRIPTION
TSM108 is a P-channel MOSFET controller which
ensures constant voltage and constant current in
Switching Mode Power Supply (step down) like in
automotive battery charging applications.
TSM108 can easily be configured for very wide
voltage and current needs.
TSM108 is built in rugged BCD technology and
includes a PWM generator, Voltage and Current
control loops, a precision Voltage Reference, and
a P-Mosfet Gate Drive output. TSM108 can
sustain 60V on Vcc, and therefore meet the
standard Load Dump requirements in the
Autom o tive field.
TSM108 includes security functions which lock the
PMosfet in OFF state: OVLO (Over Voltage
Lockout) and UVLO (Under Voltage Lockout). The
P-Mosfet Gate is also protected from over voltage
drive thanks to a 12V clamping protection circuit.
TSM108 includes a standby feat ure which allows
very low quiescent current when activated, as well
as safe P-Mosfet Off state .
TSM108 is suitable for car environment
accessories, as well as numerous other DC/DC
step down regulation.
APPLICATION DIAGRAM
ORDER CODE
D = Small Outline Package (SO) - also available in Tape & Reel (DT)
PIN CONNECTIONS (top view)
Part Number Temperature Range
Package
D
TSM108I -40°, +125°C
•
MOSFET P
BATTERY
TSM108
DC INPUT
or PNP
D
SO14
(Plastic Micropacka ge)
VCC
G
OV
UV
ICTRL
OSC
GND
VCOM
P
VCTRL
ICOMP
VREF
VS
7
6
5
4
3
2
1
8
9
10
11
12
13
14 GD
!STBY
TSM108
AUTOMOTIVE SWITCH MODE
VOLTAGE AND CURRENT CONTROLLER
November 2001
TSM108
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PIN DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
OPERATING CONDITIONS
Name Pin Type Description
VCC 1 Power Supply Power Supply Line of the Device - Source of the P-MOSFET
GND 3 Power Ground 0V Reference for all Voltages
GD 14 Gate Drive Gate Drive Pin of the P-MOSFET - Middle Point of the MOSFET
Push Pull Output Stage
VREF 10 Output Voltage Reference Output
VS 13 HZ Input Voltage Sense Resistor Input
ICTRL 12 HZ Input Current Regulation Input
VCTRL 11 HZ Input Voltage Regulation Input
VCOMP 8 Output Compensation pin - Output of Voltage Control Op-Amp
ICOMP 9 Output Compensation pin - Output of Current Control Op-Amp
OSC 7 Input Oscillator Frequency Set Capacitor
!STBY 2 Input Standby Command (Command = 0V ===> Device Standby)
UV 4 I/O Programmable Under Voltage Lockout. The middle point of the
integrated resistor bridge is accessible. Preset value is 8V min.
OV 5 I/O Programmable Over Voltage Lockout. The middle point of the
integrated resistor bridge is accessible. Preset value is 33V max.
G 6 Test Pin Internally Connected to Ground
Symbol Parameter Value Unit
V
CC
Supply Voltage 60 V
T
j
Maximum Junction Temperature 150 °C
R
thja
Thermal Resistance Junction to Ambient (SO package) 130 °C/W
T
amb
Ambient Temperature -55 to +125 °C
V
max
Out Terminal Voltage (ICTRL, VS) 10 V
Symbol Parameter Value Unit
V
CC
Supply Voltage UVLO to OVLO V
V
ter1
Out Terminal Voltage (ICTRL, VS) 0 to 9 V
V
ter2
Out Terminal Voltage (UV, OV, OSC) 0 to 6 V
TSM108
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ELECTRICAL CHARACTERISTICS
T
amb
= 25°C, VCC = 12V (unless otherwise specified)
Symbol Parameter Test Condition Min. Typ. Max. Unit
CURRENT CONSUMPTION
I
CC
Current Consumption 4 7 mA
STANDBY
I
stby
Current Consumption in Standby Mode 150
µ
A
V
sh
Input Standby Voltage High Impedance Internal Pull up resistor.
Stby pin should be left
open
2V
V
sl
Input Standby Voltage Low 0.8 V
OSCILLATOR
F
OSC
Frequency of the Oscillator C
OSC
= 220pF 70 100 130 kHz
VOLTAGE CONTROL 1)
2)
1. V
ref
paramete r i ndi cates glob al precision of the voltage control loop.
2. Control Gain : A
v
= 95dB ; Input R esistance : Rin = infinite ; Output Resistance : R
out
= 700MΩ ; Output Source/Sink Current :
I
so
, Isi = 150µA ; Recommended val ues for the com pensation network are : 22nF & 22kΩ in series bet ween outpu t and ground.
V
ref
Voltage Control Reference T
amb
= 25°C
-25°C < T
amb
< 85°C
2.450
2.520
2.590
V
CURRENT CONTROL 3) 4)
5)
3. V
sense
paramete r i ndi cated global precis i on of the current contro l lo op.
4. Control Gain : A
v
= 105dB ; Input Resistance : Rin =380kΩ ; Output Resistance : R
out
= 105MΩ ; Output Source/Sink Current :
I
so
, Isi = 150µA ; Recommended val ues for the com pensation network are : 22nF & 22kΩ in series bet ween outpu t and ground.
5. A current foldb ack function i s implemented thanks to a systema tic -6mV negat i ve offset on the current amplifier i nputs which
protects the battery fr om over charging current under low battery volt age conditi ons, or output short circui t conditions.
V
sense
Current Control Reference Voltage T
amb
= 25°C
-25°C < T
amb
< 85°C
196
191
206 216
221
mV
GATE DRIVE - P CHANNEL MOSFET DRIVE
I
sink
Sink Current - Switch ON T
amb
= 25°C
-25°C < T
amb
< 85°C
15
40 mA
I
source
Source Current - Switch OFF T
amb
= 25°C
-25°C < T
amb
< 85°C
30
80 mA
C
load
Input Capacitance of the PMOSFET
6)
6. The Gate Drive output stag e has been optim i zed for PMo sf ets with input capacitance equal to Cload. A bigger Mosfet (with input
capacitance higher than Cload) can be used with TSM108, but the gate drive performances will be reduced (in particular when
reaching the Dmax. PW M mode).
11.5nF
PWM
∆
max.
Maximum Duty Cycle of the PWM function 95 100 %
UVLO
UV
Under Voltage Lock Out
7)
7. The given limits comprise the hysteresis (UV
hyst
).
-25°C < T
amb
< 85°C 8 9 V
UV
hyst
UVLO Voltage Hysteresis - low to high 200 mV
R
uvu
Upper Resistor of UVLO bridge
8)
8. It is possible to m odify the UVLO and OVLO l i m i ts by adding a resi stor (to ground or to VCC) on the pins UV and OV.
The internal values of the resistor should be taken into account
T
amb
= 25°C 184 k
Ω
R
uvl
Lower Resistor of UVLO bridge (see note 8) T
amb
= 25°C 76.5 k
Ω
OVLO
OV Over Voltage Lock Out (see note 7) -25°C < T
amb
< 85°C 32 35 V
OV
hyst
OVLO Voltage Hysteresis - low to high 400 mV
R
ovu
Upper Resistor of OVLO bridge (see note 8) T
amb
= 25°C 275 k
Ω
R
ovl
Lower Resistor of OVLO bridge (see note 8) T
amb
= 25°C 23.2 k
Ω
TSM108
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DETAILED INTERNAL SCHEMATIC
13
12
9
11
10
8
14
7
2
4
5
1
3
VS
ICTR
L
ICOMP
VCOMP
VREF
VCTR
L
Vsense
200mV
VREF
2,52V
GND
6
VCC
!STBY
UV
OV
OSC
GD
TSM108
10k
Ω
20µA
VCC
Ruvu
184k
Ω
Ruvl
76,5k
Ω
VREF
VCC
Rovu
275k
Ω
Rovl
23,2k
Ω
G
4,5V
15V
Oscillator block
Protection block
maximum duty cycle = 95%
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