Datasheet TS636ID, TS636, TS636IDT Datasheet (SGS Thomson Microelectronics)

1/9

■ LOW NOISE : 4.7nV/√Hz

■ LOW DISTORTION

■ HIGH SLEW RATE : 90V/µs

■ WIDE BANDWIDTH : 52MHz @ -3dB &

18dB gain

■ GAIN PROGRAMM A BLE from -9dB to +30dB

with 3dB STEPS

■ POWER DOWN FUNCTION

DESCRIPTION

This TS636 is particularly intended for applica­tions such as preamplification in telecommunica­tion systems using m ultiple carriers. It has been
minly designed to fit with ADSL chip-sets such as
ASCOT ADSL chip-set for CPE.

The TS636 is a differential digitally con troled vari­able gain amplifier featuring a high slew rate of
90V/µs, a large bandwidth, a very low distortion
and a very low current and voltage noise.

The gain can be set from -9dB to +30dB through a
4bit digital word, with 3dB steps.

The gain monotonicity is guaranteed by design.
The TS636 comes in SO-14 plastic packages.

APPLICATION

■ Preamplifier with automatic gain control for

Asymmetric Digital Subscriber Line (ADSL).

ORDER CODE

D = Small Outline Package (SO) - also available in Tape & Reel (DT)

PIN CONNECTIONS (top view)

Part Number Temperature Range

Package

D

TS636I -40, +85°C

•

D

SO14

(Plastic Micropackage)

+Vcc2

Inpu t 1

Input 2

-Vcc

DGND

LSB

GC1

GC2

GC3

MSB GC4

Output 1

1

2

3

4

5

6

7

14

13

12

11

10

9

8

Output 2

AGND

Power Down

+Vcc1

Gain Control

Logic Dec oder

TS636

DIFFERENTIAL VARIABLE GAIN AMPLIFIER

FOR ADSL LINE INTERFACE

January 2001

TS636

2/9

ABSOLUTE MAXIMUM RATINGS

OPERATING CONDITIONS

APPLICATION: ADSL LINE INTERFACE

Symbol Parameter Value Unit

V

CC

Supply voltage

1)

14 V

V

i

Input Voltage

2)

0 to 14 V

T

oper

Operating Free Air Temperature Range TS636ID -40 to + 85 °C

T

std

Storage Temperature -65 to +150 °C

T

j

Maximum Junction Temperature 150 °C

R

thjc

Thermal Resistance Junction to Case 22 °C/W

R

thja

Thermal Resistance Junction to Ambiante Area 125 °C/W
Output Short Circuit Duration Infinite

1. All voltages values are with respect to network terminal.

2. The magnitude of input and output voltages must never exceed V

CC

+0.3V.

Symbol Parameter Value Unit

V

CC

Supply Voltage 5 to 12 V

V

icm

Common Mode Input Voltage

V

CC

/2

V

twisted-pair
telephone
line

HYBRID

CIRCUIT

LP filter

TS634 or TS635
Line Driver

reception
(analog signal)

emission
(analog
signal)

upstream

downstream

ST70135 ST70134

TS636
Receiver

VGA

ASCOT ADSL
CHIP-SET

Power Down

4-bit Gain Cont rol

TX

RX

TS636

3/9

ELECTRICAL CHARACTERISTICS. VCC = ±6Volts, T

amb

= 25°C (unless otherwise specified).

Symbol Parameter Test Condition Min. Typ. Max Unit

DC PERFORMANCE

I

ib

Input Bias Current (AGND pin) 8

µ

A

I

CC

Total Supply Current

No load, V

out

= 0

28 mA

∆

V

OFFSET

Differential Input Offset Voltage

V

in

= 0, AV = 30dB

6mV

SVR Supply Voltage Rejection Ratio

A

V

= 0dB

50 80 dB

POWER DOWN MODE

I

ccpdw

Power Down Total Consumption Power Down Mode 150

µ

A

Z

out

Power Down Output Impedance Power Down Mode 100kΩ150kΩ//5pF

AC PERFORMANCE

Z

in

Input Impedance 100kΩ//5pF

V

OH

High Level Output Voltage
R

L

connected to GND

R

L

= 500

Ω

4 4.5 V

V

OL

Low Level Output Voltage
R

L

connected to GND

R

L

= 500

Ω

-4.5 -4 V

A

V

Voltage Gain F= 1MHz

-9 30 dB

Gain monotonicity guaranteed by design

P

AV

Precision of the Voltage Gain F= 1MHz -1.4 1.4 dB

A

vstep

Step Value F= 1MHz 2.4 3 3.6 dB

A

vmis

Gain Mismatch between Both
Channels

F= 1MHz 1 dB

B

w

Bandwidth @ -3dB
R

L

= 500Ω, CL = 15pF

A

V

= -9dB

45 100 MHz

A

V

= +30dB

917 MHz

R

bw

Bandwidth Roll-off

A

V

= +30dB, F = 1MHz

0.08 dB

I

o

Bandwidth @ -3dB
R

L

= 500Ω, CL = 15pF

|Source| 17 28

mA

Sink 17 22

SR Slew Rate (gain independent)

V

o

= 2Vpeak

40 90 V/µs

NOISE AND DISTORTION

in Equivalent Input Noise Current F = 100kHz 1.6 pA/√Hz

en Equivalent Input Noise Voltage

F = 100kHz
A

V

= 30dB

4.7 nV/√Hz

THD30 Harmonic Distorsion

1Vpeak, F = 150kHz,
A

V

= +30dB, RL = 500Ω//15pF

dBc

H2 -70
H3 -93
H4 -98
H5 -99

IM3_1

Third Order Intermodulation
Product

F1 = 180kHz, F2 = 280kHz

V

out

= 1Vpeak, AV = +30dB

R

L

= 500Ω//15pF

dBc

@ 80kHz -77
@ 380kHz -85
@640kHz -86
@740kHz -87

IM3_2

Third Order Intermodulation
Product

F1 = 70kHz, F2 = 80kHz

V

out

= 1Vpeak, AV = +30dB

R

L

= 500Ω//15pF

dBc

@ 60kHz -77
@ 90kHz -79
@220kHz -83
@230kHz -84

TS636

4/9

DIGI T AL INPUTS

SIMPLIFIED SCHEMATIC

The TS636 consists of two independent channels.
Each channel has two stages. The first is a very low noise digitally controlled variable gain amplifier (range

0 to 18dB).
The TS636 features a high input impedance and a low noise current. To minimize the overall noise figure,

the source impedance must be less than 3kΩ.
This value gives an equal contribution of voltage and current noises.
The second stage is a gain/attenuation stage (+12dB to -9dB) featuring a low output impedance.
This output stage can drive loads as low as 500Ω.

POWER DOWN MODE POSITION

Pin Parameter Min. Typ. Max. Unit

GC1, GC2, GC3

and GC4

Low Level 0 0.8

V

High Level 2 3.3

Power Down

Thershold Voltage for Power
Down Mode (high level active)

0 0.8

V

23.3

+

_

_

+

+

_

_

+

v

v

GAIN CON TROL

LOGIC DECODER

Input1

+

_

_

+

v

Input2

+Vcc2

Digital GND
(DGND)

Ouput2

Ouput1

+Vcc1

-Vcc

Analog GND
(AGND)

GC2

GC1
GC3

GC4

v

v

v

Power
Down

+Vcc

-Vcc

+Vcc

-Vcc

Power Down

Input Output

TS636

5/9

BANDWIDTH

The small signal bandwidth is almost constant for gains between +18dB to 0dB and is in the order of
52MHz to 70MHz respectively. For 30dB gain the bandwidth is around 18MHz.

The power bandwidth is typically equal to 30MHz for 2V peak to peak signals.

MAXIMUM INPUT LEVEL

The input level must not exceed the following values :
negative peak value: must be greater than -V

CC

+ 1.5V

positive peak value: must be less than +V

CC

- 1.5V

For example, if a

±6V power supply is used, the input signal can swing between -4.5V and +4.5V.

These values are due to common mode input range limitations of the input stage of the first amplifier.
Some other limitations may occur, due to the slew rate of the first operational amplifier (typically in the or-

der of 300V/µs). This means that the maximum input signal decreases at high frequency.

SINGLE SUPPLY OPERATI ON

The incoming signal is AC coupled to the inputs.
The TS636 can be used either with a dual or a single supply. If a single supply is used, the inputs are bi-

ased to the mid supply voltage (+V

CC/2

). This bias network m ust be carefully designed, in ord er to reject

any noise present on the supply rail.
The AGND pin (9) must be connected to +V

CC/2

. The bias current of the second stage (inverting structure)
is 8µA for both amplifiers. A resistor divider structure can be used. Two resistances should be chosen by
considering 8µA as the 1% of the total current through these resistances. For a single +12V supply volt­age, two resistances of 7.5kΩ can be used. The differential input consists of a high pass circuit, formed by
the 1µF capacitor and a 1kΩ resistance and gives a break frequency of 160Hz.

SINGLE +12V SUP PLY OF THE TS 636

+Vcc2

Input 1

Input 2

-Vcc

DGND

GC1

GC2

GC3

GC4

Output 1

1

2

3

4

5

6

7

14

13

12

11

10

9

8

Output 2

AGND

Power Down

+Vcc1

Gain Control

Logic Decoder

10nF 1µF

7.5k

7.5k

12V

10nF 1µF

47k

47k

12V

1k

1k

IN+

IN-

10nF

100nF 10µF

12V

10nF

100nF

1µF

1µF

TS636

TS636

6/9

GAIN CONTROL

The gain and the power down mode is programmed with a 4 bit digital word :

The gain is the same for both channels.
The digital inputs are CMOS compatible. The supply voltage of the logic decoder used to transcode the digital word can be either 3.3V or 5V or VCC.

Digital

Control

GC4....GC1

MSB LSB

Total Gain

(dB)

First Stage

Gain

(dB)

Second Stage

Gain

(dB)

Maximum

Input Level

Bandwidth

Small Signal

Eq. Input

Noise

(nV/√Hz)

$0000 -9 0 -9 2.8Vrms 110MHZ 29
$0001 -6 0 -6 2.8Vrms 100MHz 26
$0010 -3 0 -3 2.8Vrms 85MHz 23
$0011 0 0 0 2.8Vrms 69MHz 22
$0100 3 3 0 2Vrms 63MHz 16
$0101 6 6 0 1.4Vrms 58MHz 12
$0110 9 9 0 1Vrms 56MHz 9

$0111 12 12 0 0.7Vrms 55MHz 7
$1000 15 15 0 0.5Vrms 54MHz 6
$1001 18 18 0 0.35Vrms 52MHz 4.8
$1010 21 21 3 0.25Vrms 42MHz 4.7
$1011 24 24 6 175mVrms 30MHz 4.7
$1100 27 27 9 125mVrms 24MHz 4.6
$1101 30 30 12 88mVrms 18MHz 4.6

$1110 30 30 12 88mVrms 18MHz 4.6

$1111 30 30 12 88mVrms 18MHz 4.6

TS636

7/9

Closed Loop Gain vs. Frequency

Negative & Positive Slew Rate vs. Gain

Gain Switching (+15dB to -9dB)

Bandwidth vs. Gain

Equivalent Input Voltage Noise vs. Gain

Gain Switching (+30dB to +9dB)

-40

-30

-20

-10

0

10

20

30

40

Gain (dB)

10kHz 100kHz 1MHz 10MHz

100MHz

Frequency

-9 -6 -3 0 3 6 9 12 15 18 21 24 27 30

GAIN (dB)

70

75

80

85

90

95

100

105

110

SLEW RATE (V/µs)

SR+

SR-

Time

-4

-3

-2

-1

0

1

2

3

4

5

6

Ouput Sign al (V)

0

5µs

10µs 15µs

20µs

GC4 command

Ouput Signal

-9 -6 -3 0 3 6 9 12 15 18 21 24 27 30

GAIN (dB)

10

20

30

40

50

60

70

80

90

100

BANDWIDTH (MHz)

-9 -6 -3 0 3 6 9 12 15 18 21 24 27 30

GAIN (dB)

0

2

4

6

8

10

12

14

16

18

20

22

24

26

28

30

VOLTAGE NOISE (nV/VHz)

-4

-3

-2

-1

0

1

2

3

4

5

6

Ouput Signal (V)

0

5µs

10µs

15µs

20µs

Time

GC1 command

Ouput Signal

measurement conditions: Vcc=±6V, Rload=500

Ω,

Tamb=25°C

TS636

8/9

Output/Input Isolation in Power Down Mode vs.
Freque ncy

3rd Order In term odulation

(2 tones : 180kHz and 280kHz)

3rd Order In term odulation

(2 tones : 180kHz and 280kHz)

10kHz

100kHz 1MHz

10MHz

-110

-100

-90

-80

-70

-60

-50

Isolation (dB)

Frequency

012345

Vout peak (V)

-90

-85

-80

-75

-70

IM3 (dBc)

80kHZ

380kHZ
640kHZ

740kHZ

012345

Vout peak (V)

-90

-85

-80

-75

-70

IM3 (dBc)

60kHZ
90kHZ

220kHZ

230kHZ

measurement conditions: Vcc=±6V, Rload=500

Ω,

Tamb=25°C

TS636

9/9

Information furnished is beli eved to be accurate and reliable. However, STMicroe lectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No licens e is granted by implication or otherwise unde r any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication ar e subject to change without notice. This publication supersedes and replaces all information
previously supplied. S TMicroelectronics products are not authorized for use as critica l components in life suppo rt devices or
systems without express written approval of STMicroelectronics.

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PACKAGE MECHANICAL DATA
14 PINS - PLASTIC MICROPACKAGE (SO)

Dim.

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 1.75 0.069
a1 0.1 0.2 0.004 0.008
a2 1.6 0.063

b 0.35 0.46 0.014 0.018
b1 0.19 0.25 0.007 0.010

C 0.5 0.020
c1 45° (typ.)

D (1) 8.55 8.75 0.336 0.344

E 5.8 6.2 0.228 0.244

e 1.27 0.050
e3 7.62 0.300

F (1) 3.8 4.0 0.150 0.157

G 4.6 5.3 0.181 0.208

L 0.5 1.27 0.020 0.050

M 0.68 0.027

S 8° (max.)

Note : (1) D and F do not include mold flash or protrusions - Mold flash or protrusions shall not exceed 0.15mm (.066 inc) ONLY FOR DATA B OOK.