SGS Thomson Microelectronics TS615IPWT, TS615 Datasheet

TS615

DUAL WIDE BAND OPERATIONAL AMPLIFIER

WITH HIGH OUTPUT CURRENT

■ LOW NOISE : 2.5nV/√Hz

■ HIGH OUTPUT CURRENT : 420mA

■ VERY LOW HARMONIC AND INTERMODU-

LATION D I S TORTIO N

■ HIGH SLEW RA TE : 410V/µs

■ -3dB BANDWIDTH : 40MHz@gain=12dB on

25Ω load single ended.

■ 21.2Vp-p DIFFERENTIAL OUTPUT SWING

on 50Ω load, 12V power supply

■ CURRENT FEEDBACK STRUCTURE

■ 5V to 12V POWER SUPPLY

■ SPECIFIED FOR 20Ω and 50Ω DIFFER EN-

TIAL LOAD

■ POWER DOWN FUNCTION WITH A SHORT

CIRCUITED OUTPUT to keep the matching with the line in sleep mode

DESCRIPTION

The TS615 is a dual operational am plifier featuring a high output current 410mA. These drivers can be configured differentially for driving signals in telecommunication systems using multiple carriers. The TS615 is ideally suited for xDSL (High Speed Asymmetrical Digital Subscriber Line) applications. This circuit is c apable of driving a 10 Ω or 25Ω load at ±2.5V, 5V, ±6V or +12V power supply. The TS615 will be able to reach a -3dB bandwidth of 40MHz on 25Ω load with a 12dB gain. This device is designed for the high slew rates to support low harmonic distortion and intermodulation. The TS615 is fitted out with Power Down function to decrease the consumption. During this sleep state the device displays a short circuit output in order to keep the impedance matching with the line. The TS615 is housed in TSSOP14 Exposed-Pad plastic package for a very low thermal resistance.

P

TSSOP14 Exposed-Pad

(Plastic Micro package)

ORDER CODE

Part Number Temperature Range Package

TS615IPWT -40, +85°C PW

PW= Thin Shrink Small Outline Package with Exposed-Pad

(TSSOP Exposed-Pad) only available in Tape & Reel (PWT)

PIN CONNECTIONS (top view)

-VCC1

+VCC1

Non Inverting Input1

Inverting Input1

Power Down

NC

1

1 2

2 3

3

+ - - +

4

4 5

5 6

6 7

7

Top View

14

-VCC2

13

Output2Output1

12

+VCC2

Non Inverting Input2

11

11 10

10

Inverting Input2

Inverting Input2 NC

NC

9

NC

8

APPLICATION

■ Line driver for xDSL

■ Multiple Video Line Driver

December 2002

Cross Section V iew Showi ng Exposed-Pa d

This pad c an be con nected to a (-Vcc) copper ar ea on the PCB

1/27

TS615

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

T

R R P ESD

except

pins 4, 5,

10, 11

ESD

only pins 4,

5, 10, 11

Supply voltage

CC

V

Differential Input Voltage

id

V

in Input Voltage Range

Operating Free Air Temperature Range -40 to + 85 °C

oper

Storage Temperature -65 to +150 °C

std

T

Maximum Junction Temperature 150 °C

j

Thermal Resistance Junction to Case 4 °C/W

thjc

Thermal Resistance Junction to Ambient Area 40 °C/W

thja

Maximum Power Dissipation (@25°C) 3.1 W

max.

CDM : Charged Device Model HBM : Human Body Model MM : Machine Model CDM : Charged Device Model HBM : Human Body Model MM : Machine Model Output Short Circuit

1. All voltage values, except differential voltage are with respect to network terminal.

2. Differential voltage are non-inverting input terminal with respect to the inverting input terminal.

3. The magnitude of input and output voltage must never exceed V

4. An output current limitation protects the circuit from transient currents. Short-circuits can cause excessive heating. Destructive dissipation can result from short circuit on amplifiers.

1)

2)

3)

±7 V ±2 V ±6 V

1.5 2

200

1 1

100

4)

+0.3V.

CC

kV kV

V kV kV

V

OPERATING CONDITIONS

Symbol Parameter Value Unit

V

Power Supply Voltage ±2.5 to ±6 V

CC

+1.5V to +VCC-1.5V

Common Mode Input Voltage

icm

-V

CC

TYPICAL APPLICATION:

Differential Line Driver for xDSL Applications

12

11

10

Vi

R1

R4

Vi Vo

5

4

Pw-Dwn

+

1/2TS615

_

14

R2

GND

R3

3

_

1/2TS615

+

1

6

+Vcc

-Vcc

+Vcc

-Vcc

13

2

12.5Ω

Vo

1:2

25Ω 100Ω

V

2/27

TS615

ELECTRICAL CHARACTERISTICS

V

= ±6Volts, Rfb=910Ω,T

CC

Note: as described on page 24 (table 71), the TS615 requires a 620Ω feedback res i st or for an optimis ed bandwidth wi t h a gai n of 12 B for a 12V power supply. Nevertheless, due to production test constraints, the TS615 is tested with the same feedback resistor for 12V and 5V power su ppl i es (910Ω).

Symbol Parameter Test Condition Min. Typ. Max. Unit

DC PERFORMANCE

V

Input Offset Voltage

io

V

∆

Z

C

CMR

SVR

Differential Input Offset Voltage

io

I

Positive Input Bias Current

ib+

I

Negative Input Bias Current

ib-

Input(+) Impedance 82 k

IN+

Z

Input(-) Impedance 54

IN-

Input(+) Capacitance 1 pF

IN+

Common Mode Rejection Ratio 20 log (∆V

/∆Vio)

ic

Supply Voltage Rejection Ratio 20 log (∆V

I

Total Supply Current per Operator No load 14 17 mA

CC

/∆Vio)

cc

DYNAMIC PERFORMANCE and OUTPUT CHARACTERISTIC

R

Open Loop Transimpedance

OL

-3dB Bandwidth

Full Power Bandwidth

BW

Gain Flatness @ 0.1dB

Tr Rise Time

Tf Fall Time

Ts Settling Time

SR Slew Rate

V

High Level Output Voltage

OH

V

Low Level Output Voltage

OL

Output Sink Current

I

out

Output Source Current

= 25°C (unless otherwise specified)

amb

T

amb

< T

T

min.

T

amb

T

amb

T

min.

T

amb

T

min.

V

∆

ic

T

min.

V

∆

cc

T

min.

V

out

T

min.

< T

amb

= 25°C

< T

amb

< T

amb

= ±4.5V

< T

amb

=±2.5V to ±6V < T

< T

amb

= 7Vp-p, RL = 25

< T

amb.

Small Signal V A

= 12dB, RL = 25

V

Large Signal V

= 12dB, RL = 25

A

V

Small Signal V

= 12dB, RL = 25

A

V

= 6Vp-p, AV = 12dB, RL

out

= 25

Ω

= 6Vp-p, AV = 12dB, RL

V

out

= 25

Ω

= 6Vp-p, AV = 12dB, RL

V

out

= 25

Ω

= 6Vp-p, AV = 12dB, RL

V

out

= 25

Ω

R

=25Ω Connected to GND

L

R

=25Ω Connected to GND

L

V

= -4Vp

out

< T

T

min.

V

out

T

min.

amb

= +4Vp

< T

amb

< T

max.

<20mVp

out

Ω

=3Vp

out

Ω

<20mVp

out

Ω

max.

1.25 3.5

2.1

mV

2.5 mV

630

7.8 315

3.2

A

µ

A

µ

Ω

58 63

61

72 79

78

Ω

521

8.9

dB

M

Ω

25 40

MHz

26

7 MHz

10.6 ns

12.2 ns

50 ns

330 410 V/µs

4.8 5.1 V

-5.5 -5.2 V

-350 -530

-440

330 420

mA

365

3/27

TS615

Note: as described on page 24 (table 71), the TS615 requires a 620Ω feedback res i st or for an optimis ed bandwidth wi t h a gai n of 12 B for

a 12V power supply. Nevertheless, due to production test constraints, the TS615 is tested with the same feedback resistor for 12V and 5V power su ppl i es (910Ω).

Symbol Parameter Test Condition Min. Typ. Max. Unit

NOISE AND DISTORTION

eN Equivalent Input Noise Voltage F = 100kHz 2.5 nV/√Hz iNp Equivalent Input Noise Current (+) F = 100kHz 15 pA/√Hz iNn Equivalent Input Noise Current (-) F = 100kHz 21 pA/√Hz

= 14Vp-p, AV = 12dB

HD2

HD3

IM2

IM3

2nd Harmonic distortion (differential configuration)

3rd Harmonic distortion (differential configuration)

2nd Order Intermodulation Product (differential configuration)

3rd Order Intermodulation Produ ct (differential configuration)

V

out

F= 110kHz, R

= 14Vp-p, AV = 12dB

V

out

F= 110kHz, R

= 50Ω diff.

L

= 50Ω diff.

L

F1= 100kHz, F2 = 110kHz

= 16Vp-p, AV = 12dB

V

out

= 50Ω diff.

R

L

F1= 370kHz, F2 = 400kHz

= 16Vp-p, AV = 12dB

V

out

R

= 50Ω diff.

L

F1 = 100kHz, F2 = 110kHz

= 16Vp-p, AV = 12dB

V

out

= 50Ω diff.

R

L

F1 = 370kHz, F2 = 400kHz

= 16Vp-p, AV = 12dB

V

out

= 50Ω diff.

R

L

-87 dBc

-83 dBc

-76 dBc

-75

-88 dBc

-87

4/27

TS615

ELECTRICAL CHARACTERISTICS

V

= ±2.5Volts, Rfb=910Ω,T

CC

Symbol Parameter Test Condition Min. Typ. Max. Unit

DC PERFORMANCE

V

Input Offset Voltage

io

V

∆

Z

C

CMR

SVR

Differential Input Offset Voltage

io

I

Positive Input Bias Current

ib+

I

Negative Input Bias Current

ib-

Input(+) Impedance 71 k

IN+

Z

Input(-) Impedance 62

IN-

Input(+) Capacitance 1.5 pF

IN+

Common Mode Rejection Ratio 20 log (∆V

/∆Vio)

ic

Supply Voltage Rejection Ratio 20 log (∆V

I

Total Supply Current per Operator No load 11.9 15 mA

CC

/∆Vio)

cc

DYNAMIC PERFORMANCE and OUTPUT CHARACTERISTICS

R

Open Loop Transimpedance

OL

-3dB Bandwidth

BW

Full Power Bandwidth

Gain Flatness @ 0.1dB

Tr Rise Time

Tf Fall Time

Ts Settling Time

SR Slew Rate

V

High Level Output Voltage

OH

V

Low Level Output Voltage

OL

Output Sink Current

I

out

Output Source Current

= 25°C (unless otherwise specified)

amb

T

amb

< T

T

min.

T

amb

T

amb

T

min.

T

amb

T

min.

V

∆

ic

T

min.

V

∆

cc

T

min.

V

out

T

min.

< T

amb

= 25°C

< T

amb

< T

amb

= ±1V

< T

amb.

=±2V to ±2.5V < T

< T

amb.

= 2Vp-p, RL = 10

< T

amb.

Small Signal V

= 12dB, RL = 10

A

V

Large Signal V

= 12dB, RL = 10

A

V

Small Signal V A

= 12dB, RL = 10

V

= 2.8Vp-p, AV = 12dB

out

= 10

R

Ω

L

V

= 2.8Vp-p, AV = 12dB

out

= 10

R

Ω

L

= 2.2Vp-p, AV = 12dB

V

out

= 10

R

Ω

L

= 2.2Vp-p, AV = 12dB

V

out

R

= 10

Ω

L

R

=10Ω Connected to GND

L

R

=10Ω Connected to GND

L

= -1.25Vp

V

out

< T

T

min.

V

out

T

min.

< T

amb

= +1.25Vp

< T

amb

max.

Ω

max.

<20mVp

out

Ω

= 1.4Vp

out

Ω

<20mVp

out

Ω

max.

0.5 2.5

1.2

2.5 mV 530 8

0.8 11

1.24

55 60

58

63 77

76

25.4

2.1

20 30

MHz

20

5.7 MHz

11 ns

11.5 ns

39 ns

100 130 V/µs

1.5 1.75 V

-2.05 -1.8 V

-350 -470

-450

200 270

245

mV

A

µ

A

µ

Ω

dB

M

Ω

mA

5/27

TS615

Symbol Parameter Test Condition Min. Typ. Max. Unit

NOISE AND DISTORTION

eN Equivalent Input Noise Voltage F = 100kHz 2.5 nV/√Hz iNp Equivalent Input Noise Current (+) F = 100kHz 15 pA/√Hz iNn Equivalent Input Noise Current (-) F = 100kHz 21 pA/√Hz

= 6Vp-p, AV = 12dB

HD2

HD3

IM2

IM3

2nd Harmonic distortion (differential configuration)

3rd Harmonic distortion (differential configuration)

2nd Order Intermodulation Product (differential configuration)

3rd Order Intermodulation Produ ct (differential configuration)

V

out

F= 110kHz, R

= 6Vp-p, AV = 12dB

V

out

F= 110kHz, R

= 20Ω diff.

L

= 20Ω diff.

L

F1= 100kHz, F2 = 110kHz

= 6Vp-p, AV = 12dB

V

out

R

= 20Ω diff.

L

F1= 370kHz, F2 = 400kHz V

= 6Vp-p, AV = 12dB

out

= 20Ω diff.

R

L

F1 = 100kHz, F2 = 110kHz

= 6Vp-p, AV = 12dB

V

out

= 20Ω diff.

R

L

F1 = 370kHz, F2 = 400kHz V

= 6Vp-p, AV = 12dB

out

R

= 20Ω diff.

L

-97 dBc

-98 dBc

-86

-88

-90

-85

dBc

POWER DOWN MODE FEA TURES (The Power Down command is a MOS input featuring a high input impedance)

V

= ±2.5Volts, 5Volts, ±6Volts or 12Volts, T

CC

Symbol Parameter Min. Typ. Max. Unit

Pin (6) Threshold Voltage for Power Down Mode

V

Low Level

pdw

High Level

Icc

R C

Power Down Mode Total Current Consumption@ VCC=5V

pdw

Power Down Mode Total Current Consumption@ V Power Down Mode Output Impedance @ VCC=5V

pdw

Power Down Mode Output Impedance @ V Power Down Mode Output Capacitance 63 pF

pdw

POWER DOWN CONTROL CIRCUIT STATUS

V

=Low Level

pdw

=High Level

V

pdw

= 25°C

amb

CC

=12V

CC

Active Standby

=12V

-V

CC

+2

-VCC+0.8 +V

69 80

148 180

19 23

15.3 19

CC

V

A

µ

A

µ

Ω Ω

6/27

TS615

Figure 1 : Load Configuration

Load: RL=25Ω, VCC=±6V

+6V

TS615

+6V

-6V

+

_

25Ω

50Ω

cable

49.9Ω

33Ω

33Ω 1W

1W

cable

Figure 2 : Closed Loop Gai n vs. Frequency

AV=+1

2

0

-2

-4

-6

-8

(gain (dB)

-10

-12

-14

(Vcc=±2.5V, Rfb=1.1kΩ, Rload=10Ω) (Vcc=±6V, Rfb=750

-16 100 1k 10k 100k 1M 10M 100M

gain

phase

Ω, Rload=25Ω)

Frequency (Hz)

(Vcc=±6V)

(Vcc=±2.5V)

(Vcc=±6V)

50Ω

40

20

0

-20

-40

-60

-80

-100

-120

Figure 4 : Load Configuration

Load: RL=10Ω, VCC=±2.5V

+2.5V

TS615

+2.5V

-2.5V

10

+

_

49.9

Ω

11

Ω

0.5W

Ω

Figure 5 : Closed Loop Gai n vs. Frequency

AV=-1

2

0

-2

)

°

Phase (

-4

-6

-8

(gain (dB))

-10

-12

-14

(Vcc=±2.5V, Rfb=1kΩ, Rin=1kΩ , Rload=10Ω) (Vcc=±6V, Rfb=680

-16 100 1k 10k 100k 1M 10M 100M

gain

phase

(Vcc=±2.5V)

(Vcc=±6V)

Ω, Rin=680Ω, Rload=25Ω)

Frequency (Hz)

cable

(Vcc=±2.5V)

(Vcc=±6V)

50

Ω

50

Ω

-140

-160

-180

-200

)

°

-220

Phase (

-240

-260

-280

-300

Figure 3 : Closed Loop Gai n vs. Frequency

AV=+2

8

6

4

2

0

-2

(gain (dB))

-4

-6

-8

-10 100 1k 10k 100k 1M 10M 100M

gain

phase

(Vcc=±2.5V)

Frequency (Hz)

(Vcc=±6V)

(Vcc=±2.5V)

(Vcc=±6V)

40

20

0

-20

-40

-60

-80

-100

-120

Figure 6 : Closed Loop Gai n vs. Frequency

AV=-2

8

6

4

)

°

Phase (

2

0

-2

(gain (dB))

-4

-6

(Vcc=±2.5V, Rfb=1kΩ, Rin=510Ω, Rload=10Ω)

-8

(Vcc=±6V, Rfb=680

-10 100 1k 10k 100k 1M 10M 100M

gain

phase

(Vcc=±2.5V)

(Vcc=±6V)

Ω, Rin=750//620Ω, Rload=25Ω)

Frequency (Hz)

(Vcc=±2.5V)

(Vcc=±6V)

-140

-160

-180

-200

-220

-240

-260

-280

-300

)

°

Phase (

7/27

TS615

Figure 7 : Closed Loop Gai n vs. Frequency

AV=+4

14

12

10

8

6

4

(gain (dB))

2

0

-2

(Vcc=±2.5V, Rfb=910Ω, Rg=300Ω, Rload=10Ω) (Vcc=±6V, Rfb=620

-4 100 1k 10k 100k 1M 10M 100M

gain

phase

(Vcc=±2.5V)

(Vcc=±6V)

Ω, R g =560//330Ω, Rload=25Ω)

Frequency (Hz)

(Vcc=±2.5V)

(Vcc=±6V)

Figure 8 : Closed Loop Gai n vs. Frequency

AV=+8

20

18

16

14

12

10

(gain (dB))

8

6

4

(Vcc=±2.5V, Rfb=680Ω, Rg=240//160Ω, Rload=10Ω) (Vcc=±6V, Rfb=510

2

100 1k 10k 100k 1M 10M 100M

gain

phase

(Vcc=±2.5V)

(Vcc=±6V)

Ω, Rg=270//100Ω, Rload=25Ω)

Frequency (Hz)

(Vcc=±2.5V)

(Vcc=±6V)

40

20

0

-20

-40

-60

-80

-100

-120

40

20

0

-20

-40

-60

-80

-100

-120

Figure 10 : Closed Loop Gain vs. Frequency

AV=-4

14

12

10

8

)

°

Phase (

6

4

(gain (dB))

2

0

(Vcc=±2.5V, Rfb=1kΩ, Rin=320//360Ω, Rload=10Ω)

-2

(Vcc=±6V, Rfb=620

-4 100 1k 10k 100k 1M 10M 100M

gain

phase

(Vcc=±2.5V)

(Vcc=±6V)

Ω, Rin=360//270Ω, Rload=25Ω)

Frequency (Hz)

Figure 11 : Closed Loop Gain vs. Frequency

AV=-8

)

°

Phase (

20

18

16

14

12

10

(gain (dB))

8

6

4

(Vcc=±2.5V, Rfb=680Ω, Rin=160//180Ω, Rload=10Ω) (Vcc=±6V, Rfb=510

2

100 1k 10k 100k 1M 10M 100M

gain

phase

(Vcc= ± 2. 5V)

(Vcc=±6V)

Ω, Rin=150//110Ω, Rload=25Ω)

Frequency (Hz)

(Vcc=±2.5V)

(Vcc=±6V)

(Vcc=±2.5V)

(Vcc= ± 6V )

-140

-160

-180

-200

-220

-240

-260

-280

-300

-140

-160

-180

-200

-220

-240

-260

-280

-300

)

°

Phase (

)

°

Phase (

Figure 9 : Bandwidth vs. Temperature

AV=+4, Rfb=910

50

45

40

35

Bw (MHz)

30

25

20

-40-200 20406080

8/27

Ω

Vcc=±6V Load=25

Vcc=±2.5V Load=10

Ω

Temperature (°C)

Figure 12 : Positive Slew Rate

AV=+4, Rfb=620

4

2

(V)

0

OUT

V

-2

-4

0.0 10.0n 20.0n 30.0n 40.0n 50.0n

, V

Ω

=±6V, RL=25

CC

Time (s)

Ω

TS615

Figure 13 : Positive Slew Rate

AV=+4, Rfb=910

2

1

(V)

0

OUT

V

-1

-2

0.0 10.0n 20.0n 30.0n 40.0n 50.0n

, V

Ω

CC

=±2.5V, RL=10

Time (s)

Ω

Figure 14 : Negative Slew Rate

AV=+4, Rfb=620Ω, VCC=±6V, RL=25

4

2

Ω

Figure 16 : Positive Slew Rate

AV= - 4, Rfb=620

4

2

(V)

0

OUT

V

-2

-4

0.0 10.0n 20.0n 30.0n 40.0n 50.0n

, V

Ω

=±6V, RL=25

CC

Time (s)

Ω

Figure 17 : Positive Slew Rate

AV= - 4, Rfb=910

2

1

, V

Ω

CC

=±2.5V, RL=10

Ω

(V)

0

OUT

V

-2

-4

0.0 10.0n 20.0n 30.0n 40.0n 50.0n

Time (s)

Figure 15 : Negative Slew Rate

AV=+4, Rfb=910

2

1

(V)

0

OUT

V

-1

-2

0.0 10.0n 20.0n 30.0n 40.0n 50.0n

, V

Ω

CC

=±2.5V, RL=10

Time (s)

Ω

(V)

0

OUT

V

-1

-2

0.0 10.0n 20.0n 30.0n 40.0n 50.0n

Time (s)

Figure 18 : Negative Slew Rate

AV= - 4, Rfb=620Ω, VCC=±6V, RL=25

4

2

(V)

0

OUT

V

-2

-4

0.0 10.0n 20.0n 30.0n 40.0n 50.0n

Time (s)

Ω

9/27