SGS Thomson Microelectronics TS512IN, TS512ID, TS512AIN, TS512AID, TS512 Datasheet

DUALOPERATIONAL AMPLIFIERS

.

LOW OFFSETVOLTAGE: 500µVmax.

.

LOW POWERCONSUMPTION

.

SHORT CIRCUIT PROTECTION

.

LOW DISTORTION, LOW NOISE

.

HIGHGAIN-BANDWIDTH PRODUCT

.

HIGHCHANNEL SEPARATION

.

ESD INTERNALPROTECTION

.

MACROMODEL INCLUDED IN THIS
SPECIFICATION

DESCRIPTION

The TS512 is a high performancedual operational
amplifier with frequencyand phase compensation
builtintothechip.Theinternalphasecompensation
allows stable operationas voltagefollowerin spite
of its high gain-bandwidthproducts.

The circuit presents very stable electrical charac­teristics over the entire supply voltage range, and
is particularlyintendedforprofessionalandtelecom
applications(activefilter, etc).

TS512,A

HIGH SPEED PRECISION

N

DIP8

(Plastic Package)

ORDER CODES

Part Number Temperature Range

TS512I -40, +125
TS512AI -40, +125

(Plastic Micropackage)

D

SO8

o

C ••

o

C ••

Package
ND

PINCONNECTIONS (top view)

Output 1

Inverting Input 1

Non-inverting Input 1

V

CC

March 1998

1

2

3

-

4

-

+

-

+

8

7

6

5

+

V

CC

Output

Inverting Input 2

Non-inverting Input 2

TS512,A

SCHEMATIC DIAGRAM (1/2 TS512)

Q17

R5

D3

D4

Q1

Q7

Q2

Q18

Q21

R8

Q3

Q19

Q22

R1

D6

Inverting

input

D1

Q8

D5

C2

Q10

R9

Non-inverting

R2

Q4

Q11

Q23

R10

input

D7

C1

Q9

Q20

Q5

R3

Q6

Q15

R4

D2

Q12

8

Q13

Q14

R6

Output

R7

Q16

4

ABSOLUTEMAXIMUM RATINGS

Symbol Parameter Value Unit

Supply Voltage ±18 V
Input Voltage ±V

i

CC

Differential Input Voltage ± (VCC-1)
Operating Free Air Temperature Range -40 to +125
Power Dissipation at T
Junction Temperature 150

j

=70oC 500 mW

amb

Storage Temperature Range -65 to +150

2/7

V

CC

V

V

id

T

oper

P

tot

T

T

stg

o

C

o

C

o

C

TS512,A

ELECTRICAL CHARACTERISTICS (VCC= ±15V,T

= 25oC, unless otherwise specified)

amb

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

R

V

DV

I

DI

I

A

Supply Current 0.7 1.2 mA

CC

Input Bias Current 50 150 nA

I

ib

T

min.<Top<Tmax

Input Resistance f = 1kHz 1 MΩ

i

Input Offset Voltage TS512

io

T

.<Top<T

min

Input Offset Voltage Drift T

io

Input Offset Current 5 20 nA

io

Input Offset Current Drift T

io

Output Short Circuit Current 23 mA

os

Large Signal Voltage Gain RL=2kΩ VCC= ±15V

vd

.<Top<T

min

.<Top<T

T

min

.<Top<T

min

. 300 nA

0.5 2.5

TS512A

. TS512

max

TS512A

.2µV/oC

max

.40nA

max

. 0.08 nA

max

90 100

= ±4V

V

CC

95

0.5

3.5

1.5

GBP Gain-bandwidth Product f = 100kHz 1.8 3 MHz

e

THD Total Harmonic Distortion AV= 20dB RL=2kΩ

±V

V

Equivalent Input Noise Voltage f = 1kHz

n

R
R
R

s
s
s

=50Ω
=1kΩ
= 10kΩ

8
10
18

0.03 0.1 %

=2V

V

O

PP

Output Voltage Swing RL=2kΩ VCC= ±15V

opp

Large Signal Voltage Swing RL= 10kΩ f = 10kHz 28 V

opp

f = 1kHz

= ±4V

V

CC

±13

±3

15

√Hz

SR Slew Rate Unity Gain, RL=2kΩ 0.8 1.5 V/µs

CMR Common Mode Rejection Ratio V

SVR Supply Voltage Rejection Ratio V

V

O1/VO2

Channel Separation f= 1kHz 100 120 dB

= 10V 90 dB

ic

= 1V f = 100Hz 90 dB

ic

mV

mV

°C

dB

nV

V

PP

3/7