TS432
1.24V ADJUSTABLE SHUNT VOLTAGE REFERENCE
■ 1.24V TYP OUTPUT VOLTAGE
■ ULTRA LOW OPERATING CURRENT :
60µA maximum at 25°C
■ HIGH PRECISION @ 25°C
+/- 1%
+/- 0.5%
■ HIGH STABILITY WHEN USED WITH
CAPACITIVE LOADS
■ INDUSTRIAL TEMPERATURE RANGE:
-40 to +85°C
■ 100ppm/°C TEM PER ATURE COEFF IC IENT
DESCRIPTION
The TS432 is an adjustable low power shunt
voltage reference providing an output voltage from
1.24V to 10V over the industrial temperature
range (-40 to +85°C). Available in SOT23-3
surface mount package, it can be designed in
applications where space saving is a critical issue.
The low operating current is a key advantage for
power restricted designs. In addition, the TS432 is
very stable and can be used in a broa d range of
application conditions.
L
SOT23-3L
(Plastic Micropacka ge)
PIN CONNECTIONS (top view)
APPLICATION
■ Computers
■ Instrumentation
■ Battery chargers
■ Switch Mode Power Supply
■ Battery operated equipments
ORDER CODE
Precision SOT23-3 SOT23 Marking
1% TS432ILT L235
0.5% TS432AILT L236
Single temperature range: -40 to +85°C
LT = Tiny Package (SOT23-3) - only available in Tape & Reel (LT)
December 2002
SOT2 3-3
Ref
Reference
A
Anode
K
Cathode
1/7
TS432
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
Cathode voltage 12 V
K
I
Cathode current -10 to +20 mA
K
I
R
T
LEAD
T
ESD Human Body Model (HBM) 1.5 kV
1. Pd has been ca l culated wi th T
OPERATING CONDITIONS
Symbol Parameter Value Unit
T
Reference input current -0.05 to +3 mA
REF
P
D Power dissipation
Thermal resistance junction to ambient for SOT23-3 360 °C/W
THJA
1)
SOT23-3
340 mW
Lead temperature (soldering 10 seconds) 250 °C
Storage temperature -65 to +150 °C
STG
T
Junction temperature 150 °C
J
Machine Model (MM) 150 V
= 25°C, Tj = 150°C and Rth j a = 360°C/W fo r the SOT23-3L package
amb
V
Cathode voltage 1.24 to 10 V
K
I
Cathode current 60µ to 12m A
K
Ambient temperature -40 to +85 °C
AMB
ELECTRICAL CHARACTERISTICS
T
= 25°C (unless otherwise specified)
amb
Symbol Parameter Test Condition Min. Typ. Max. Unit
I
V
REF
V
∆
REF
I
KMIN
V
∆
REF
V
∆
REF
V
∆
I
REF
I
OFF
R
KA
K
VH
E
N
Reference voltage
Reference voltage tolerance over
temperature
Minimum operating current
Reverse breakdown voltage change
with operating current range
/
Reference voltage change with output
voltage change
K
Reference input current
Off-state cathode current
Static impedance
Long term stability
Wide band noise
= 100µA, VK=V
K
REF
TS432 (1%) 1.228 1.252
TS432A (0.5%) 1.234 1.246
I
= 100µA, VK=V
K
= 25°C
T
amb
-40°C < T
I
KMIN
-40°C < T
1mA < I
-40°C < T
I
= 10mA, VK=10V to V
K
-40°C < T
=10mA, R1=10K
I
K
-40°C < T
V
REF
-40°C < T
I
∆
I
= 100µA, t = 1000hrs
K
I
= 100µA 100Hz < F < 10kHz
K
AMB
< IK < 1mA
AMB
< 12mA
K
AMB
AMB
AMB
=0, VK=10V
AMB
= 100µA to 12mA
K
REF
< +85°C
< +85°C
< +85°C
< +85°C
Ω,
< +85°C
< +85°C
REF
R2=+
∞
1.24
716mV
40 60
65
0.7 1.5
2
24
mV
6
1.8 2.5
mV/V
3
50 100
200
1 100
150
0.25 0.5
120 ppm
200 nV/√Hz
V
µ
nA
nA
Ω
A
Note : Limits are 100% production tested at 25°C. Limits over temperature are guaranteed through correlation and by design.
2/7
TS432
Reference voltage vs tempera ture
1.252
1.248
VK = V
1.244
1.240
1.236
Reference Voltage (V)
1.232
1.228
-40 0 40 80 120
Temperature (°C)
REF
IK = 100µA
Cathode voltage vs cathode curren t
10
VK = V
5
0
Cathode curren t (mA)
K
I
-5
T
AMB
REF
= +25°C
Test circuit for VK = V
REF
Input
Ik
K
V
VREF
Cathode voltage vs cathode curren t
1.5
T
=-40°C
AMB
1.0
T
=+25°C
AMB
T
=+85°C
AMB
Cathode voltage (V)
K
0.5
V
T
AMB
=+125°C
Output
-10
-1.0 -0.5 0.0 0.5 1.0 1.5
VK Cathode voltage (V)
Reference input current vs temperature
100
80
60
40
Reference current (nA)
REF
I
20
0
-40 0 40 80 120
Temperature (°C)
IK = 10 mA
= 10 KΩ
R
1
R2 = + ∞
0.0
0204060
IK Cathode current (µA)
Static impedance vs temperature
0.4
VK = V
0.3
0.2
Static impedance (Ohms)
KA
R
0.1
0.0
-40 0 40 80 120
Temperature (°C)
REF
IK = 100 µA to 12 mA
3/7
TS432
Off-State current vs temperature
150
V
= 0 V
100
Off-State current (nA)
50
OFF
I
0
-40 0 40 80 120
REF
= 10 V
V
K
Temperature (°C)
Ratio of change in reference input voltage to
change in V
voltage vs temperature
K
3
2
IK = 10 mA
= 10V to V
V
K
REF
Test circuit for Off-State current measurement
Input
Test circuit for V
KA
> V
REF
OFF
I
K =10V
V
Input
R1
K
I
REF
I
VK
1
0
Ratio of change in Reference input voltage (mV/V)
-40 0 40 80 120
Temperature (°C)
Phase and Gain vs frequency
60
Gain
40
Gain (dB)
Phase
20
0
2
10
3
10
10
Frequency (Hz)
T
4
10
= +25°C
AMB
5
R2
VREF
VK = VREF . (1+R1/R2) + IREF . R1
Test circuit for phase and gain measurement
180
Phase (Degree)
120
60
0
6
10
1 µ F
Input
23.5 kΩ
33 kΩ
33 kΩ
5V
22 µF
Output
4/7
TS432
Test circuit for pulse response at IK=100 µA
3V
0V
Pulse
Generator
f=10KHz
Intput
18K
Ω
IK = 100µA
Output
Pulse response at IK = 100 µA
3
Input
2
Output
Test circuit for pulse response at IK = 1 mA
3V
0V
Pulse
Generator
f=10KHz
Intput
1.8K
Ω
IK=1mA
Output
Pulse response at IK = 1mA
3
Input
2
IK = 1 mA
T
= + 25°C
AMB
1
Input and Ouput signals (Volt)
0
0 5 10 15
Time (µs)
Pulse response at IK = 100 µA
3
Input
2
1
Input and Outp ut signals (Volt)
0
0 5 10 15 20
Output
Time (µs)
IK = 100 µA
T
= + 25°C
AMB
IK = 100 µA
T
= + 25°C
AMB
1
Input and Outp ut signals (Volt)
0
0 5 10 15 20
Output
Time (µs)
Pulse response at IK = 1mA
3
Input
2
1
Input and Outp ut signals (Volt)
0
-5 0 5 10 15 20
Output
Time (µs)
IK = 1 mA
T
= + 25°C
AMB
5/7
TS432
Equivalent input noise vs frequency Block diagram
300
T
= + 25°C
AMB
200
Hz)
√
Noi se (nV/
100
Vref
Cathode
+
-
1.24V
0
2
3
4
10
10
10
Frequency (Hz)
5
10
6
10
7
10
Anode
6/7
PACKAGE MECHANICAL DATA
3 PINS - TINY PACKAGE (SOT23)
TS432
E
e
B
e1
S
L
H
A
D
A1
c
Millimeters Inches
Dim.
Min. Typ. Max. Min. Typ. Max.
A 0.890 1.120 0.035 0.044
A1 0.010 0.100 0.0004 0.004
A2 0.880 0.950 1.020 0.037 0.040
b 0.300 0.500 0.012 0.020
c 0.080 0.200 0.003 0.008
D 2.800 2.900 3.040 0.110 0.114 0.120
E 2.100 2.640 0.083 0.104
E1 1.200 1.300 1.400 0.047 0.051 0.055
e 0.950 0.037
e1 1.900 0.075
L 0.400 0.500 0.600 0.016 0.020 0.024
L1 0.540 0.021
k 0° 8°
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No li cense is granted by i mp lication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication ar e subject to change without notice. This publication supersedes and replaces all information
previously supplied. S TMicroelectronics products are not authorized for use as critica l components in life suppo rt devices or
systems without express written approval of STMicroelectronics.
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