SGS Thomson Microelectronics TS420-700T, TS420-700H, TS420-700B, TS420-600T, TS420-600H Datasheet
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®
TS420 Series
SENSITIVE 4A SCRs
September 2000 - Ed: 3
MAIN FEATURES:
DESCRIPTION
Thanks to highly sensitive triggering levels, the
TS420 series is suitable for all applica tions where
the available gate current is limited, such as motor
control for hand tools, kitchen aids, overvoltage
crowbar protection for low power supplies, ...
Available in through-hole or surface-mount
packages, they provide an optimized performance
in a limited space area.
Symbol Value Unit
I
T(RMS)
4A
V
DRM/VRRM
600 and 700 V
I
GT
200 µA
ABSOLUTE RATINGS (lim iting values)
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current (180° conduction angle)
Tl = 115°C 4
A
IT
(AV)
Average on-state current (180° conduction angle)
Tl = 115°C 2.5
A
I
TSM
Non repetitive surge peak on-state
current
tp = 8.3 ms
Tj = 25°C
33
A
tp = 10 ms 30
I
²
tI
²
t Value for fusing
tp = 10 ms Tj = 25°C 4.5
A
2
S
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x IGT , tr ≤ 100 ns
F = 60 Hz Tj = 125°C 50 A/µs
I
GM
Peak gate current tp = 20 µs Tj = 125°C 1.2 A
P
G(AV)
Average gate power dissipation Tj = 125°C 0.2 W
T
stg
Tj
Storage junction temperature range
Operating junction temp erature range
- 40 to + 150
- 40 to + 125
°C
G
A
K
DPAK
(TS420-B)
A
A
K
G
A
A
K
G
A
G
A
K
IPAK
(TS420-H)
TO-220AB
(TS420-T)
TS420 Series
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ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
THERMAL RESISTANCES
S = copper s urface under tab
PRODUCT SELECTOR
ORDERING INFORMATION
Symbol Test Conditions TS420 Unit
I
GT
VD = 12 V RL = 33 Ω
MAX. 200
µA
V
GT
MAX. 0.8 V
V
GD
VD = V
DRM
RL = 3.3 kΩ RGK = 220 Ω
Tj = 125°C MIN.
0.1 V
V
RG
IRG = 10 µA
MIN.
8V
I
H
I
T
= 50 mA RGK = 1 kΩ
MAX. 5 mA
I
L
IG = 1 mA RGK = 1 kΩ
MAX. 6 mA
dV/dt
V
D
= 67 % V
DRM
RGK = 220 Ω
Tj = 125°C MIN. 5 V/µs
V
TM
ITM = 8 A tp = 380 µs
Tj = 25°C MAX. 1.6 V
V
t0
Threshold voltage Tj = 125°C MAX. 0.85 V
R
d
Dynamic resistance Tj = 125°C MAX. 90 mΩ
I
DRM
I
RRM
V
DRM
= V
RRM
RGK = 220 Ω
Tj = 25°C MAX. 5 µA
Tj = 125°C 1 mA
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (DC)
3.0
°C/W
R
th(j-a)
Junction to ambient (DC)
S = 0.5 cm
²
DPAK 70
°C/W
IPAK 100
TO-220AB 60
Part Number
Voltage (xxx)
Sensitivity
Package
600 V 700 V
TS420-xxxB X X 200 µA DPAK
TS420-xxxH X X 200 µA IPAK
TS420-xxxT X X 200 µA TO-220AB
PACKING MODE
Blank:Tube
-TR: DPAK tape & reel
VOLTAGE:
600: 600V
700: 700V
SENSITIVITY:
20: 200µA
CURRENT: 4A
SCR
SERIES
PACKAGE:
B: DPAK
H: IPAK
T:TO-220AB
TS420 Series
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OTHER INFORMATION
Note: x = voltage
Part Number Marking Weight Base Quantity Packing mode
TS420-x00B TS420x00 0.3 g 75 Tube
TS420-x00B-TR TS420x00 0.3 g 2500 Tape & reel
TS420-x00H TS420x00 0.4 g 75 Tube
TS420-x00T TS420x00T 2.3 g 50 Tube
Fig. 1: Maximum average power dissipation
versus average on-state current.
Fig. 2-1: Average and D.C. on-state current
versus case temperature.
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (device mounted o n
FR4 with recommended pad layout) (DPAK).
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration
(recommended pad layout, FR4 PC board) for
DPAK.
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
P(W)
α = 180°
IT(av)(A)
360°
α
0 25 50 75 100 125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
IT(av)(A)
DC
α = 180°
Tcase(°C)
0 25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IT(av)(A)
α = 180°
DC
α = 180°
DPAK
(S = 0.5cm
2
)
IPA K
DC
Tamb( °C)
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