TS3V912
3V RAIL TO RAIL
CMOS DUALOPERATIONALAMPLIFIER
October 1997
.
DEDICATEDTO 3.3V OR BATTERY SUPPLY
(specifiedat 3V and 5V)
.
RAILTO RAIL INPUT ANDOUTPUT
VOLTAGERANGES
.
SINGLESUPPLYOPERATIONFROM 2.7V
TO 16V
.
EXTREMELYLOW INPUT BIAS CURRENT :
1pA typ
.
LOW INPUT OFFSET VOLTAGE : 2mV max.
.
SPECIFIEDFOR 600Ω AND 100Ω LOADS
.
LOW SUPPLYCURRENT: 200µA/Ampli
(VCC = 3V)
.
ESD TOLERANCE: 3KV
.
LATCH-UPIMMUNITY
.
MACROMODEL INCLUDED IN THIS
SPECIFICATION
1
2
3
45
6
7
8
-
+
-
+
Inverting Input 1
Output 1
Non-inverting Input 1
V
CC
V
CC
+
Output 2
Inverting Input 2
Non-inverting Input 2
PIN CONNECTIONS (top view)
DESCRIPTION
The TS3V912 is a RAIL TO RAIL CMOS dual
operational amplifier designed to operate with a
single 3V supply voltage.
The input voltage range V
icm
includes the two
supplyrails V
CC
+
and V
CC
-
.
The outputreaches :
•
V
CC
-
+40mV V
CC
+
-50mV with RL= 10kΩ
•
V
CC
-
+350mV V
CC
+
-350mV with RL= 600Ω
This productoffers a broad supply voltage operating rangefrom 2.7V to16V and a supply current of
only 200µA/amp. (V
CC
= 3V).
Source and sink output current capability is typically 40mA (at V
CC
= 3V), fixed by an internal
limitationcircuit.
SGS-THOMSON is offering a quad op-amp with
the same features : TS3V914.
ORDER CODES
Part Number Temperature Range
Package
ND
TS3V912I/AI/BI -40, +125
o
C ••
N
DIP8
(Plastic Package)
D
SO8
(Plastic Micropackage)
1/11
ABSOLUTEMAXIMUMRATINGS
Symbol Parameter Value Unit
V
CC
Supply Voltage - (note 1) 18 V
V
id
Differential InputVoltage - (note 2) ±18 V
V
i
Input Voltage- (note 3) -0.3 to 18 V
I
in
Current on Inputs ±50 mA
I
o
Current on Outputs ±130 mA
T
oper
Operating Free Air Temperature Range
TS3V912I/AI/BI -40 to +125
o
C
T
stg
Storage Temperature -65 to +150
o
C
Notes : 1. All voltagevalues, except differential voltage are with respect to network ground terminal.
2. Differentialvoltages are thenon-inverting input terminal with respect to the inverting input terminal.
3. Themagnitude of input and outputvoltages mustnever exceed V
CC
+
+0.3V.
OPERATING CONDITIONS
Symbol Parameter Value Unit
V
CC
Supply Voltage 2.7to 16 V
V
icm
Common Mode Input Voltage Range V
CC
-
-0.2 to V
CC
+
+0.2 V
Non-inverting
Input
Inverting
Input
Internal
Vref
Output
V
CC
V
CC
SCHEMATICDIAGRAM (1/2TS3V912)
TS3V912
2/11
ELECTRICAL CHARACTERISTICS
V
CC
+
=3V,V
CC
-
=0V,RL,CLconnectedto VCC/2, T
amb
=25oC (unlessotherwisespecified)
Symbol Parameter
TS3V912I/AI/BI
Unit
Min. Typ. Max.
V
io
Input Offset Voltage (Vic=Vo=VCC/2) TS3V912
TS3V912A
TS3V912B
T
min.
≤ T
amb
≤ T
max.
TS3V912
TS3V912A
TS3V912B
10
5
2
12
7
3
mV
DV
io
Input Offset Voltage Drift 5 µV/oC
I
io
Input Offset Current - (note 1)
T
min.
≤ T
amb
≤ T
max.
1 100
200
pA
I
ib
Input Bias Current - (note 1)
T
min.
≤ T
amb
≤ T
max.
1 150
300
pA
I
CC
Supply Current (per amplifier, A
VCL
= 1, no load)
T
min.
≤ T
amb
≤ T
max.
200 300
400
µA
CMR Common Mode Rejection Ratio V
ic
= 0 to 3V, Vo= 1.5V 70 dB
SVR Supply Voltage Rejection Ratio (V
CC
+
= 2.7to 3.3V, VO=VCC/2) 50 80 dB
A
vd
Large SignalVoltage Gain (RL= 10kΩ,VO= 1.2Vto 1.8V)
T
min.
≤ T
amb
≤ T
max.
3
2
10 V/mV
V
OH
High Level Output Voltage (Vid= 1V) RL= 100kΩ
R
L
= 10kΩ
R
L
= 600Ω
R
L
= 100Ω
T
min.
≤ T
amb
≤ T
max.
RL= 10kΩ
R
L
= 600Ω
2.95
2.9
2.3
2.8
2.1
2.96
2.6
2
V
V
OL
Low Level Output Voltage (Vid= -1V) RL= 100kΩ
R
L
= 10kΩ
R
L
= 600Ω
R
L
= 100Ω
T
min.
≤ T
amb
≤ T
max.
RL= 10kΩ
R
L
= 600Ω
30
300
900
50
70
400
100
600
mV
I
o
Output Short Circuit Current (Vid= ±1V) Source (Vo=V
CC
−
)
Sink (V
o=VCC
+
)
20
20
40
40
mA
GBP Gain Bandwidth Product
(A
VCL
= 100, RL= 10kΩ,CL= 100pF, f = 100kHz) 0.8
MHz
SR
+
Slew Rate (A
VCL
=1,RL= 10kΩ,CL= 100pF, Vi= 1.3Vto 1.7V) 0.4 V/µs
SR
-
Slew Rate (A
VCL
=1,RL= 10kΩ,CL= 100pF, Vi= 1.3Vto 1.7V) 0.3 V/µs
∅m PhaseMargin 30 Degrees
e
n
Equivalent Input Noise Voltage (Rs= 100Ω, f = 1kHz) 30
nV
√Hz
V
O1/VO2
Channel Separation (f = 1kHz) 120 dB
Note 1: Maximum values including unavoidable inaccuracies of the industrial test.
TS3V912
3/11
ELECTRICALCHARACTERISTICS
V
CC
+
=5V,V
CC
-
=0V,RL,CLconnectedto VCC/2, T
amb
=25oC (unless otherwisespecified)
Symbol Parameter
TS3V912I/AI/BI
Unit
Min. Typ. Max.
V
io
InputOffset Voltage (Vic=Vo=VCC/2) TS3V912
TS3V912A
TS3V912B
T
min.
≤ T
amb
≤ T
max.
TS3V912
TS3V912A
TS3V912B
10
5
2
12
7
3
mV
DV
io
InputOffset Voltage Drift 5 µV/oC
I
io
InputOffset Current - (note 1)
T
min.
≤ T
amb
≤ T
max.
1 100
200
pA
I
ib
InputBias Current - (note 1)
T
min.
≤ T
amb
≤ T
max.
1 150
300
pA
I
CC
SupplyCurrent (per amplifier,A
VCL
= 1, no load)
T
min.
≤ T
amb
≤ T
max.
230 350
450
µA
CMR Common Mode Rejection Ratio
V
ic
= 1.5 to 3.5V, Vo= 2.5V 60 85
dB
SVR SupplyVoltage Rejection Ratio (V
CC
+
= 3 to 5V, VO=VCC/2) 55 80 dB
A
vd
LargeSignal Voltage Gain (RL= 10kΩ,VO= 1.5Vto 3.5V)
T
min.
≤ T
amb
≤ T
max.
10
7
40 V/mV
V
OH
High LevelOutput Voltage (Vid= 1V) RL= 100kΩ
R
L
= 10kΩ
R
L
= 600Ω
R
L
= 100Ω
T
min.
≤ T
amb
≤ T
max.
RL= 10kΩ
R
L
= 600Ω
4.95
4.9
4.25
4.8
4.1
4.95
4.55
3.7
V
V
OL
Low Level Output Voltage (Vid= -1V) RL= 100kΩ
R
L
= 10kΩ
R
L
= 600Ω
R
L
= 100Ω
T
min.
≤ T
amb
≤ T
max.
RL= 10kΩ
R
L
= 600Ω
40
350
1400
50
100
500
150
750
mV
I
o
Output Short Circuit Current (Vid= ±1V) Source (Vo=V
CC
−
)
Sink (V
o=VCC
+
)
45
45
65
65
mA
GBP GainBandwidth Product
(A
VCL
= 100, RL= 10kΩ,CL= 100pF, f = 100kHz) 1
MHz
SR
+
Slew Rate (A
VCL
=1,RL= 10kΩ,CL= 100pF, Vi= 1V to 4V) 0.8 V/µs
SR
-
Slew Rate (A
VCL
=1,RL= 10kΩ,CL= 100pF, Vi= 1V to 4V) 0.6 V/µs
e
n
Equivalent Input Noise Voltage (Rs= 100Ω, f = 1kHz) 30
nV
√Hz
V
O1/VO2
ChannelSeparation (f = 1kHz) 120 dB
∅m Phase Margin 30 Degrees
Note 1 : Maximum values includingunavoidable inaccuracies of the industrial test.
TS3V912
4/11
TYPICALCHARACTERISTICS
CC
SUP PLY VOLTAGE, V (V)
0481216
T=25 C
A=1
V=V /2
amb
VCL
OCC
CC
µ
SUPPLY CURRENT, I (
A)
600
500
400
300
200
100
Figure 1 : SupplyCurrent (eachamplifier)
versusSupplyVoltage
25 50 75 100 125
INPUT BIAS CURRENT, I (pA)
ib
V = 10V
V=5V
No load
CC
i
100
10
1
amb
TEMPERATURE, T ( C)
Figure2 : Input Bias Current versusTemperature
1
14 28 42 56 70
OUTPUT VOLTAGE, V (V)
OL
amb
id
T=25C
V = -100mV
V = +5V
CC
V = +3V
CC
0
OL
OUTPUT CURRENT, I (mA)
2
3
4
5
Figure 4a : Low Level OutputVoltage versus
Low Level Output Current
2
OUTPUT VOLTAGE, V (V)
OL
amb
id
T=25C
V = -100mV
0
V=10V
CC
V = 16V
CC
OL
OUTPUT CURRENT, I (mA)
4
6
8
10
14 28 42 56 70
Figure4b : Low Level OutputVoltage versus
Low Level Output Current
5
-70 -56 -42 -28 -14 0
OUTPUT VOLTAGE, V (V)
OH
amb
id
T=25C
V = 100m V
V = +5V
CC
V = +3V
CC
4
3
2
1
0
OH
OUTPUT CURRENT, I (mA)
Figure 3a : High Level Output Voltage versus
HighLevel Output Current
4
0
OUTPUT VOLTAGE, V (V)
OH
V = +16V
CC
V = +10V
CC
OH
OUTPUT CURRENT, I (mA)
12
8
20
16
-70 -56 -42 -28 -14 0
amb
id
T=25C
V = 100m V
Figure3b : High Level OutputVoltage versus
High Level Output Current
TS3V912
5/11
50
40
30
20
10
0
-10
GAIN (dB)
PHASE (Degrees)
0
45
90
135
180
FREQUENCY, f (Hz)
PHASE
GAIN
Phase
Margin
Gain
Bandwidth
Product
6
10
10
23
10
4
10510
7
10
T=25 C
V = 10V
R = 10k
Ω
C = 100pF
A = 100
amb
CC
L
L
VCL
Figure 5a : Open Loop Frequency Response
and Phase Shift
50
40
30
20
10
0
-
10
GAIN (dB)
PHASE (Degrees)
0
45
90
135
180
FREQUENCY, f(Hz)
PHASE
GAIN
Phase
Margin
Gain
Bandwidth
Product
6
10
10
23
10
4
10
5
10
7
10
T=25 C
V=10V
R = 600
Ω
C = 100pF
A = 100
amb
CC
L
L
VCL
Figure5b : Open Loop Frequency Response
and PhaseShift
SUPPLYVOLTAGE, V (V)
CC
0481216
1800
GAINBANDW. PROD., GBP (kHz)
T=25 C
R = 10k
Ω
C = 100pF
amb
L
L
1400
1000
600
200
Figure 6a : Gain BandwidthProduct versus
SupplyVoltage
SUPPLY VOLTAGE, V (V)
CC
0481216
GAIN BANDW. PROD., GBP (kHz)
T=25 C
R = 600
Ω
C =100pF
amb
L
L
1800
1400
1000
600
200
Figure6b : Gain bandwidthProduct versus
SupplyVoltage
SUPPLY VOLTAGE, V (V)
CC
0481216
60
50
40
30
20
PHASE MARGIN, m (Degrees)
T=25 C
R = 10k
Ω
C =100pF
amb
L
L
φ
Figure 7a : Phase Margin versus Supply Voltage
SUPPLY VOLTAGE, V (V)
CC
0481216
60
50
40
30
20
PHASE MARGIN, m (Degrees)φ
T=25 C
R=600
Ω
C =100pF
amb
L
L
Figure7b : Phase Marginversus SupplyVoltage
TS3V912
6/11
TEMPERATURE
RANGE
3
V
1
9
A
I
N
RAIL TO RAIL
OP AMPs
2
-40 Cto+125 C
OFFSET VOLTAGE
SELECTION
”Nothing”
A
B
10mV max.
5mVmax.
2mVmax.
12
DUAL- 200µA/amp - 0.8MHz
DUAL- 200µA/amp - 0.7MHz
+ STANDBYposition with
High Impedance Outputs
02
I
PACKAGES
DIP
S0
S0 Tape &Reel
N
D
DT
T
S
3V
FAMILY
ORDERING INFORMATION
150
100
50
0
10 100
1000
10000
FREQUENCY (Hz)
=10V
=25 CT
amb
V
CC
=100
Ω
R
S
EQUIVALENT INPUT
VOLTAGE NOISE (nV/VHz)
Figure 8 : InputVoltage Noiseversus Frequency
TS3V912
7/11
** Standard Linear Ics Macromodels, 1993.
** CONNECTIONS:
* 1 INVERTING INPUT
* 2 NON-INVERTING INPUT
* 3 OUTPUT
* 4 POSITIVEPOWER SUPPLY
* 5 NEGATIVE POWER SUPPLY
.SUBCKT TS3V912_3 1 3 2 4 5 (analog)
**********************************************************
.MODEL MDTH D IS=1E-8 KF=6.564344E-14 CJO=10F
* INPUT STAGE
CIP 2 51.000000E-12
CIN 1 5 1.000000E-12
EIP 10 5 2 5 1
EIN 16 5 1 5 1
RIP 10 11 6.500000E+00
RIN 15 16 6.500000E+00
RIS 11 15 1.271505E+01
DIP 11 12 MDTH 400E-12
DIN 15 14 MDTH 400E-12
VOFP 12 13 DC 0.000000E+00
VOFN 13 14DC 0
IPOL 13 5 4.000000E-05
CPS 11 15 2.125860E-08
DINN 17 13 MDTH 400E-12
VIN 17 5 0.000000e+00
DINR 15 18 MDTH 400E-12
VIP 4 18 0.000000E+00
FCP 4 5 VOFP 5.000000E+00
FCN 5 4VOFN 5.000000E+00
* AMPLIFYING STAGE
FIP 5 19 VOFP 2.750000E+02
FIN 5 19 VOFN 2.750000E+02
RG1 19 5 1.916825E+05
RG2 19 4 1.916825E+05
CC 19 29 2.200000E-08
HZTP 30 29 VOFP 1.3E+03
HZTN 5 30 VOFN 1.3E+03
DOPM 19 22 MDTH 400E-12
DONM 21 19 MDTH 400E-12
HOPM 22 28 VOUT 3800
VIPM 28 4 150
HONM 21 27 VOUT 3800
VINM 5 27 150
EOUT 26 23 19 5 1
VOUT 23 5 0
ROUT 26 3 75
COUT 3 5 1.000000E-12
DOP 19 68 MDTH 400E-12
VOP 4 25 1.724
HSCP 68 25 VSCP1 0.8E8
DON 69 19 MDTH 400E-12
VON 24 5 1.7419107
HSCN 24 69 VSCN1 0.8E+08
VSCTHP 60 61 0.0875
** VSCTHP = leseuil au dessus de vio * 500
** c.a.d 275U-000U dus a l’offset
DSCP1 61 63 MDTH 400E-12
VSCP1 63 64 0
ISCP 64 0 1.000000E-8
DSCP2 0 64 MDTH 400E-12
DSCN2 0 74 MDTH 400E-12
ISCN 74 0 1.000000E-8
VSCN1 73 74 0
DSCN1 71 73 MDTH 400E-12
VSCTHN 71 70 -0.55
** VSCTHN = le seuil au dessous devio * 2000
** c.a.d -375U-000U dus a l’offset
ESCP 60 0 2 1500
ESCN 70 0 2 1 -2000
.ENDS
Applies to : TS3V912 (VCC= 3V)
ELECTRICALCHARACTERISTICS V
CC
+
=3V,V
CC
-
=0V,RL,CLconnectedto V
CC/2,Tamb
=25oC
(unlessotherwisespecified)
Symbol Conditions Value Unit
V
io
0mV
A
vd
RL= 10kΩ 10 V/mV
I
CC
No load, peroperator 200 µA
V
icm
-0.2 to3.2 V
V
OH
RL= 10kΩ 2.96 V
V
OL
RL= 10kΩ 30 mV
I
sink
VO=3V 40 mA
I
source
VO=0V 40 mA
GBP R
L
= 10k
Ω,
CL= 100pF 0.8 MHz
SR R
L
= 10k
Ω,
CL= 100pF 0.3 V/µs
TS3V912
8/11
** Standard Linear Ics Macromodels, 1993.
** CONNECTIONS:
* 1 INVERTING INPUT
* 2 NON-INVERTING INPUT
* 3 OUTPUT
* 4 POSITIVEPOWER SUPPLY
* 5 NEGATIVE POWER SUPPLY
* 6 STANDBY
.SUBCKT TS3V912_5 1 3 2 4 5 (analog)
**********************************************************
.MODEL MDTH D IS=1E-8 KF=6.564344E-14 CJO=10F
* INPUT STAGE
CIP 2 51.000000E-12
CIN 1 5 1.000000E-12
EIP 10 5 2 5 1
EIN 16 5 1 5 1
RIP 10 11 6.500000E+00
RIN 15 16 6.500000E+00
RIS 11 15 7.322092E+00
DIP 11 12 MDTH 400E-12
DIN 15 14 MDTH 400E-12
VOFP 12 13 DC 0.000000E+00
VOFN 13 14DC 0
IPOL 13 5 4.000000E-05
CPS 11 15 2.498970E-08
DINN 17 13 MDTH 400E-12
VIN 17 5 0.000000e+00
DINR 15 18 MDTH 400E-12
VIP 4 18 0.000000E+00
FCP 4 5 VOFP 5.750000E+00
FCN 5 4VOFN 5.750000E+00
ISTB0 5 4 500N
* AMPLIFYING STAGE
FIP 5 19 VOFP 4.400000E+02
FIN 5 19 VOFN 4.400000E+02
RG1 19 5 4.904961E+05
RG2 19 4 4.904961E+05
CC 19 29 2.200000E-08
HZTP 30 29 VOFP 1.8E+03
HZTN 5 30 VOFN 1.8E+03
DOPM 19 22 MDTH 400E-12
DONM 21 19 MDTH 400E-12
HOPM 22 28 VOUT 3800
VIPM 28 4 230
HONM 21 27 VOUT 3800
VINM 5 27 230
EOUT 26 23 19 5 1
VOUT 23 5 0
ROUT 26 3 82
COUT 3 5 1.000000E-12
DOP 19 68 MDTH 400E-12
VOP 4 25 1.724
HSCP 68 25 VSCP1 0.8E+08
DON 69 19 MDTH 400E-12
VON 24 5 1.7419107
HSCN 24 69 VSCN1 0.8E+08
VSCTHP 60 61 0.0875
** VSCTHP = leseuil au dessus de vio * 500
** c.a.d 275U-000U dus a l’offset
DSCP1 61 63 MDTH 400E-12
VSCP1 63 64 0
ISCP 64 0 1.000000E-8
DSCP2 0 64 MDTH 400E-12
DSCN2 0 74 MDTH 400E-12
ISCN 74 0 1.000000E-8
VSCN1 73 74 0
DSCN1 71 73 MDTH 400E-12
VSCTHN 71 70 -0.55
** VSCTHN = le seuil au dessous devio * 2000
** c.a.d -375U-000U dus a l’offset
ESCP 60 0 2 1500
ESCN 70 0 2 1 -2000
.ENDS
Applies to : TS3V912 (VCC= 5V)
ELECTRICALCHARACTERISTICS V
CC
+
=5V,V
CC
-
=0V,RL,CLconnectedto V
CC/2,Tamb
=25oC
(unless otherwise specified)
Symbol Conditions Value Unit
V
io
0mV
A
vd
RL= 10kΩ 50 V/mV
I
CC
No load, per operator 230 µA
V
icm
-0.2 to5.2 V
V
OH
RL= 10kΩ 4.95 V
V
OL
RL= 10kΩ 40 mV
I
sink
VO=5V 65 mA
I
source
VO=0V 65 mA
GBP R
L
= 10k
Ω,
CL= 100pF 1 MHz
SR R
L
= 10k
Ω,
CL= 100pF 0.8 V/µs
TS3V912
9/11
PM-DIP8.EPS
PACKAGE MECHANICAL DATA
8 PINS- PLASTICDIP
Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 3.32 0.131
a1 0.51 0.020
B 1.15 1.65 0.045 0.065
b 0.356 0.55 0.014 0.022
b1 0.204 0.304 0.008 0.012
D 10.92 0.430
E 7.95 9.75 0.313 0.384
e 2.54 0.100
e3 7.62 0.300
e4 7.62 0.300
F 6.6 0260
i 5.08 0.200
L 3.18 3.81 0.125 0.150
Z 1.52 0.060
DIP8.TBL
TS3V912
10/11
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of suchinformation nor for any infringement of patents or other rights of third parties which may result
from its use. No license isgranted by implication or otherwiseunder anypatent or patent rights of SGS-THOMSON Microelectronics.
Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.SGS-THOMSON Microelectronics products are not authorized for useas critical componentsin life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1997 SGS-THOMSON Microelectronics – Printed in Italy– All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta- Morocco
The Netherlands - Singapore - Spain- Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
ORDER CODE :
PM-SO8.EPS
PACKAGE MECHANICAL DATA
8 PINS - PLASTICMICROPACKAGE(SO)
Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 1.75 0.069
a1 0.1 0.25 0.004 0.010
a2 1.65 0.065
a3 0.65 0.85 0.026 0.033
b 0.35 0.48 0.014 0.019
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.020
c1 45
o
(typ.)
D 4.8 5.0 0.189 0.197
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 3.81 0.150
F 3.8 4.0 0.150 0.157
L 0.4 1.27 0.016 0.050
M 0.6 0.024
S8
o
(max.)
S08.TBL
TS3V912
11/11
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