ELECTRICAL CHARACTERISTICS
V
CC
+
=3V,V
CC
-
=0V,RL,CLconnectedto VCC/2, T
amb
=25oC (unlessotherwisespecified)
Symbol Parameter
TS3V912I/AI/BI
Unit
Min. Typ. Max.
V
io
Input Offset Voltage (Vic=Vo=VCC/2) TS3V912
TS3V912A
TS3V912B
T
min.
≤ T
amb
≤ T
max.
TS3V912
TS3V912A
TS3V912B
10
5
2
12
7
3
mV
DV
io
Input Offset Voltage Drift 5 µV/oC
I
io
Input Offset Current - (note 1)
T
min.
≤ T
amb
≤ T
max.
1 100
200
pA
I
ib
Input Bias Current - (note 1)
T
min.
≤ T
amb
≤ T
max.
1 150
300
pA
I
CC
Supply Current (per amplifier, A
VCL
= 1, no load)
T
min.
≤ T
amb
≤ T
max.
200 300
400
µA
CMR Common Mode Rejection Ratio V
ic
= 0 to 3V, Vo= 1.5V 70 dB
SVR Supply Voltage Rejection Ratio (V
CC
+
= 2.7to 3.3V, VO=VCC/2) 50 80 dB
A
vd
Large SignalVoltage Gain (RL= 10kΩ,VO= 1.2Vto 1.8V)
T
min.
≤ T
amb
≤ T
max.
3
2
10 V/mV
V
OH
High Level Output Voltage (Vid= 1V) RL= 100kΩ
R
L
= 10kΩ
R
L
= 600Ω
R
L
= 100Ω
T
min.
≤ T
amb
≤ T
max.
RL= 10kΩ
R
L
= 600Ω
2.95
2.9
2.3
2.8
2.1
2.96
2.6
2
V
V
OL
Low Level Output Voltage (Vid= -1V) RL= 100kΩ
R
L
= 10kΩ
R
L
= 600Ω
R
L
= 100Ω
T
min.
≤ T
amb
≤ T
max.
RL= 10kΩ
R
L
= 600Ω
30
300
900
50
70
400
100
600
mV
I
o
Output Short Circuit Current (Vid= ±1V) Source (Vo=V
CC
−
)
Sink (V
o=VCC
+
)
20
20
40
40
mA
GBP Gain Bandwidth Product
(A
VCL
= 100, RL= 10kΩ,CL= 100pF, f = 100kHz) 0.8
MHz
SR
+
Slew Rate (A
VCL
=1,RL= 10kΩ,CL= 100pF, Vi= 1.3Vto 1.7V) 0.4 V/µs
SR
-
Slew Rate (A
VCL
=1,RL= 10kΩ,CL= 100pF, Vi= 1.3Vto 1.7V) 0.3 V/µs
∅m PhaseMargin 30 Degrees
e
n
Equivalent Input Noise Voltage (Rs= 100Ω, f = 1kHz) 30
nV
√Hz
V
O1/VO2
Channel Separation (f = 1kHz) 120 dB
Note 1: Maximum values including unavoidable inaccuracies of the industrial test.
TS3V912
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